FZT951TA Datasheet FZT951TA, FZT953TA, FZT951TC | P1-P3

SOT223 PNP SILICON PLANAR HIGH CURRENT

(HIGH PERFORMANCE) TRANSISTORS

ISSUE 3 - APRIL 2000

FEATURES

* 5 Amps continuous current , up to 15 Amps peak current

* Very low saturation voltages

* Excellent gain characteristics specified up to 10 Amps

* P

tot

= 3 watts

* FZT951 exhibts extremely low equivalent on resistance;

R

CE(sat)

55m at 4A

COMPLEMENTARY TYPES - FZT951 = FZT851

FZT953 = FZT853

PARTMARKING DETAILS - DEVICE TYPE IN FULL

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL FZT951 FZT953 UNIT

Collector-Base Voltage V

CBO

-100 -140 V

Collector-Emitter Voltage V

CEO

-60 -100 V

Emitter-Base Voltage V

EBO

-6 V

Peak Pulse Current I

CM

-15 -10 A

Continuous Collector Current I

C

-5 A

Power Dissipation at T

amb

=25°C P

tot

3W

Operating and Storage Temperature

Range

T

j

:T

stg

-55 to +150 °C

*The power which can be dissipated assuming the device is mounted in a typical manner on a

P.C.B. with copper equal to 4 square inch minimum

FZT951

FZT953

C

E

B

3 - 279

3 - 280 3 - 281

-55°C

+25°C

+100°C

+175°C

+100°C

+25°C

-55°C

0.01 0.1 20110

1.0

0.8

0.6

0.4

0

0.2

1.6

1.4

1.2

0.01 0.1 20110

1.0

0.8

0.6

0.4

0

0.2

1.6

1.4

1.2

0.01 0.1 20110

1.0

0.8

0.6

0.4

0

0.2

1.6

1.4

1.2

0.01 0.1 20110

0

1.0

0.8

0.6

0.4

0.2

1.6

1.4

1.2

0.01 0.1 20

1

10

1.0

0.8

0.6

0.4

0

0.2

1.6

1.4

1.2

TYPICAL CHARACTERISTICS

V

CE(sat)

v I

C

I

C

- Collector Current (Amps)

V

C

E

(s

at

)

- (V

olts)

T

amb

=25°C

V

CE(sat)

v I

C

I

C

- Collector Current (Amps)

V

CE

(

s

at

)

- (V

olts)

-55°C

+25°C

+175°C

-55°C

+25°C

+100°C

+175°C

I

C

- Collector Current (Amps) I

C

- Collector Current (Amps)

h

FE

v I

C

V

BE(sat)

v I

C

I

C

- Collector Current (Amps)

V

BE(on)

v I

C

h

F

E

- Normalised

G

a

in

V

B

E

(s

at

)

- (V

olts)

V

B

E

- (V

olts)

I

C

- Colle

c

tor Curre

n

t (

A

mps)

I

C

/I

B

=10

I

C

/I

B

=10

I

C

/I

B

=50

I

C

/I

B

=10V

CE

=1V

V

CE

=1V

300

200

100

h

FE

-

T

y

p

i

c

a

l

G

a

i

n

V

CE

- Collector Voltage (Volts)

Safe Operating Area

0.1 100110

0.1

1

10

100

Single Pulse Test at T

amb

=25°C

D.C.

1s

100ms

10ms

1.0ms

0.1ms

0.001

0.0010.001

FZT951

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated)

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base Breakdown

Voltage

V

(BR)CBO

-100 -140 V

I

C

=-100 A

Collector-Emitter Breakdown

Voltage

V

(BR)CER

-100 -140 V

I

C

=-1 A, RB 1k

Collector-Emitter Breakdown

Voltage

V

(BR)CEO

-60 -90 V I

C

=-10mA*

Emitter-Base Breakdown

Voltage

V

(BR)EBO

-6 -8 V

I

E

=-100 A

Collector Cut-Off Current I

CBO

-50

-1

nA

A

V

CB

=-80V

V

CB

=-80V, T

amb

=100°C

Collector Cut-Off Current I

CER

R 1k

-50

-1

nA

A

V

CB

=-80V

V

CB

=-80V, T

amb

=100°C

Emitter Cut-Off Current I

EBO

-10 nA V

EB

=-6V

Collector-Emitter Saturation

Voltage

V

CE(sat)

-20

-85

-155

-370

-50

-140

-210

-460

mV

I

C

=-100mA, I

B

=-10mA*

I

C

=-1A, I

B

=-100mA*

I

C

=-2A, I

B

=-200mA*

I

C

=-5A, I

B

=-500mA*

Base-Emitter

Saturation Voltage

V

BE(sat)

-1080 -1240 mV I

C

=-5A, I

B

=-500mA*

Base-Emitter

Turn-On Voltage

V

BE(on)

-935 -1070 mV I

C

=-5A, V

CE

=-1V*

Static Forward

Current Transfer Ratio

h

FE

100

75

10

200

90

25

300

I

C

=-10mA, V

CE

=-1V*

I

C

=-2A, V

CE

=-1V*

I

C

=-5A, V

CE

=-1V*

I

C

=-10A, V

CE

=-1V*

Transition Frequency f

T

120 MHz I

C

=-100mA, V

CE

=-10V

f=50MHz

Output Capacitance C

obo

74 pF V

CB

=-10V, f=1MHz

Switching Times t

on

t

off

82

350

ns

I

C

=-2A, I

B1

=-200mA

I

B2

=200mA, V

CC

=-10V

* Measured under pulsed conditions. Pulse width =300

s. duty cycle 2%

Spice parameter data is available upon request for this device

3 - 280 3 - 281

-55°C

+25°C

+100°C

+175°C

+100°C

+25°C

-55°C

0.01 0.1 20110

1.0

0.8

0.6

0.4

0

0.2

1.6

1.4

1.2

0.01 0.1 20110

1.0

0.8

0.6

0.4

0

0.2

1.6

1.4

1.2

0.01 0.1 20110

1.0

0.8

0.6

0.4

0

0.2

1.6

1.4

1.2

0.01 0.1 20110

0

1.0

0.8

0.6

0.4

0.2

1.6

1.4

1.2

0.01 0.1 20

1

10

1.0

0.8

0.6

0.4

0

0.2

1.6

1.4

1.2

TYPICAL CHARACTERISTICS

V

CE(sat)

v I

C

I

C

- Collector Current (Amps)

V

C

E

(s

at

)

- (V

olts)

T

amb

=25°C

V

CE(sat)

v I

C

I

C

- Collector Current (Amps)

V

CE

(

s

at

)

- (V

olts)

-55°C

+25°C

+175°C

-55°C

+25°C

+100°C

+175°C

I

C

- Collector Current (Amps) I

C

- Collector Current (Amps)

h

FE

v I

C

V

BE(sat)

v I

C

I

C

- Collector Current (Amps)

V

BE(on)

v I

C

h

F

E

- Normalised

G

a

in

V

B

E

(s

at

)

- (V

olts)

V

B

E

- (V

olts)

I

C

- Colle

c

tor Curre

n

t (

A

mps)

I

C

/I

B

=10

I

C

/I

B

=10

I

C

/I

B

=50

I

C

/I

B

=10V

CE

=1V

V

CE

=1V

300

200

100

h

FE

-

T

y

p

i

c

a

l

G

a

i

n

V

CE

- Collector Voltage (Volts)

Safe Operating Area

0.1 100110

0.1

1

10

100

Single Pulse Test at T

amb

=25°C

D.C.

1s

100ms

10ms

1.0ms

0.1ms

0.001

0.0010.001

FZT951

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated)

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base Breakdown

Voltage

V

(BR)CBO

-100 -140 V

I

C

=-100 A

Collector-Emitter Breakdown

Voltage

V

(BR)CER

-100 -140 V

I

C

=-1 A, RB 1k

Collector-Emitter Breakdown

Voltage

V

(BR)CEO

-60 -90 V I

C

=-10mA*

Emitter-Base Breakdown

Voltage

V

(BR)EBO

-6 -8 V

I

E

=-100 A

Collector Cut-Off Current I

CBO

-50

-1

nA

A

V

CB

=-80V

V

CB

=-80V, T

amb

=100°C

Collector Cut-Off Current I

CER

R 1k

-50

-1

nA

A

V

CB

=-80V

V

CB

=-80V, T

amb

=100°C

Emitter Cut-Off Current I

EBO

-10 nA V

EB

=-6V

Collector-Emitter Saturation

Voltage

V

CE(sat)

-20

-85

-155

-370

-50

-140

-210

-460

mV

I

C

=-100mA, I

B

=-10mA*

I

C

=-1A, I

B

=-100mA*

I

C

=-2A, I

B

=-200mA*

I

C

=-5A, I

B

=-500mA*

Base-Emitter

Saturation Voltage

V

BE(sat)

-1080 -1240 mV I

C

=-5A, I

B

=-500mA*

Base-Emitter

Turn-On Voltage

V

BE(on)

-935 -1070 mV I

C

=-5A, V

CE

=-1V*

Static Forward

Current Transfer Ratio

h

FE

100

75

10

200

90

25

300

I

C

=-10mA, V

CE

=-1V*

I

C

=-2A, V

CE

=-1V*

I

C

=-5A, V

CE

=-1V*

I

C

=-10A, V

CE

=-1V*

Transition Frequency f

T

120 MHz I

C

=-100mA, V

CE

=-10V

f=50MHz

Output Capacitance C

obo

74 pF V

CB

=-10V, f=1MHz

Switching Times t

on

t

off

82

350

ns

I

C

=-2A, I

B1

=-200mA

I

B2

=200mA, V

CC

=-10V

* Measured under pulsed conditions. Pulse width =300

s. duty cycle 2%

Spice parameter data is available upon request for this device

FZT951TA

FZT951TA

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