FZT951TA

ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
-140 -170 V
I
C
=-100 A
Collector-Emitter Breakdown
Voltage
V
(BR)CER
-140 -170 V
I
C
=-1 A, RB 1k
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
-100 -120 V I
C
=-10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-6 -8 V
I
E
=-100 A
Collector Cut-Off Current I
CBO
-50
-1
nA
A
V
CB
=-100V
V
CB
=-100V, T
amb
=100°C
Collector Cut-Off Current I
CER
R 1k
-50
-1
nA
A
V
CB
=-100V
V
CB
=-100V, T
amb
=100°C
Emitter Cut-Off Current I
EBO
-10 nA V
EB
=-6V
Collector-Emitter Saturation
Voltage
V
CE(sat)
-20
-90
-160
-300
-50
-115
-220
-420
mV
mV
mV
mV
I
C
=-100mA, I
B
=-10mA*
I
C
=-1A, I
B
=-100mA*
I
C
=-2A, I
B
=-200mA*
I
C
=-4A, I
B
=-400mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-1010 -1170 mV I
C
=-4A, I
B
=-400mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-925 -1160 mV I
C
=-4A, V
CE
=-1V*
Static Forward
Current Transfer
h
FE
100
100
50
30
200
200
90
50
15
300
I
C
=-10mA, V
CE
=-1V*
I
C
=-1A, V
CE
=-1V*
I
C
=-3A, V
CE
=-1V*
I
C
=-4A, V
CE
=-1V*
I
C
=-10A, V
CE
=-1V*
Transition Frequency f
T
125 MHz I
C
=-100mA, V
CE
=-10V
f=50MHz
Output Capacitance C
obo
65 pF V
CB
=-10V, f=1MHz
Switching Times t
on
t
off
110
460
ns
ns
I
C
=-2A, I
B1
=-200mA
I
B2
=200mA, V
CC
=-10V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle 2%
Spice parameter data is available upon request for this device
3 - 283
FZT953
3 - 282
FZT953
-55°C
+25°C
+100°C
+175°C
+100°C
+25°C
-55°C
0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
C
- Collector Current (Amps)
V
CE
(
sa
t
)
- (V
olts)
T
amb
=25°C
V
CE(sat)
v I
C
I
C
- Collector Current (Amps)
V
CE
(s
a
t
)
- (V
olts)
-55°C
+25°C
+175°C
-55°C
+25°C
+100°C
+175°C
I
C
- Collector Current (Amps) I
C
- Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
BE(on)
v I
C
h
F
E
-
No
r
ma
l
ised
Ga
i
n
V
BE
(
sa
t
)
- (V
olts)
V
BE
- (V
olts)
I
C
-
Co
l
le
c
to
r
Cur
r
e
nt
(
Am
ps)
I
C
/I
B
=10
I
C
/I
B
=10
I
C
/I
B
=50
I
C
/I
B
=10V
CE
=1V
V
CE
=1V
300
200
100
h
FE
- Typical Gain
V
CE
-
Collector Voltage (Volts)
Safe Operating Area
0.1 100110
0.01
0.1
1
10
Single Pulse Test at T
amb
=25°C
D.C.
1s
100ms
10ms
1.0ms
0.1ms
0.001 0.001
0.001
0.001
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
-140 -170 V
I
C
=-100 A
Collector-Emitter Breakdown
Voltage
V
(BR)CER
-140 -170 V
I
C
=-1 A, RB 1k
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
-100 -120 V I
C
=-10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-6 -8 V
I
E
=-100 A
Collector Cut-Off Current I
CBO
-50
-1
nA
A
V
CB
=-100V
V
CB
=-100V, T
amb
=100°C
Collector Cut-Off Current I
CER
R 1k
-50
-1
nA
A
V
CB
=-100V
V
CB
=-100V, T
amb
=100°C
Emitter Cut-Off Current I
EBO
-10 nA V
EB
=-6V
Collector-Emitter Saturation
Voltage
V
CE(sat)
-20
-90
-160
-300
-50
-115
-220
-420
mV
mV
mV
mV
I
C
=-100mA, I
B
=-10mA*
I
C
=-1A, I
B
=-100mA*
I
C
=-2A, I
B
=-200mA*
I
C
=-4A, I
B
=-400mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-1010 -1170 mV I
C
=-4A, I
B
=-400mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-925 -1160 mV I
C
=-4A, V
CE
=-1V*
Static Forward
Current Transfer
h
FE
100
100
50
30
200
200
90
50
15
300
I
C
=-10mA, V
CE
=-1V*
I
C
=-1A, V
CE
=-1V*
I
C
=-3A, V
CE
=-1V*
I
C
=-4A, V
CE
=-1V*
I
C
=-10A, V
CE
=-1V*
Transition Frequency f
T
125 MHz I
C
=-100mA, V
CE
=-10V
f=50MHz
Output Capacitance C
obo
65 pF V
CB
=-10V, f=1MHz
Switching Times t
on
t
off
110
460
ns
ns
I
C
=-2A, I
B1
=-200mA
I
B2
=200mA, V
CC
=-10V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle 2%
Spice parameter data is available upon request for this device
3 - 283
FZT953
3 - 282
FZT953
-55°C
+25°C
+100°C
+175°C
+100°C
+25°C
-55°C
0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
C
- Collector Current (Amps)
V
CE
(
sa
t
)
- (V
olts)
T
amb
=25°C
V
CE(sat)
v I
C
I
C
- Collector Current (Amps)
V
CE
(s
a
t
)
- (V
olts)
-55°C
+25°C
+175°C
-55°C
+25°C
+100°C
+175°C
I
C
- Collector Current (Amps) I
C
- Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
C
-
Collector Current (Amps)
V
BE(on)
v I
C
h
F
E
-
No
r
ma
l
ised
Ga
i
n
V
BE
(
sa
t
)
- (V
olts)
V
BE
- (V
olts)
I
C
-
Co
l
le
c
to
r
Cur
r
e
nt
(
Am
ps)
I
C
/I
B
=10
I
C
/I
B
=10
I
C
/I
B
=50
I
C
/I
B
=10V
CE
=1V
V
CE
=1V
300
200
100
h
FE
- Typical Gain
V
CE
-
Collector Voltage (Volts)
Safe Operating Area
0.1 100110
0.01
0.1
1
10
Single Pulse Test at T
amb
=25°C
D.C.
1s
100ms
10ms
1.0ms
0.1ms
0.001 0.001
0.001
0.001

FZT951TA

Mfr. #:
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT PNP HighCt Low Sat
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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