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74HC366PW-Q100,118

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20
74HC_HCT366_Q100 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 7 August 2012 9 of 19
NXP Semiconductors
74HC366-Q100; 74HCT366-Q100
Hex buffer/line driver; 3-state; inverting
10. Dynamic characteristics
I
CC
supply current V
I
=V
CC
or GND; I
O
=0A; V
CC
=5.5V - - 160 A
I
CC
additional supply current V
I
=V
CC
2.1 V; other inputs at V
CC
or GND; I
O
=0A
pins nA - - 490 A
pin OE1
--490A
pin OE2
--441A
Table 7. Static characteristics 74HCT366-Q100
…continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions Min Typ Max Unit
Table 8. Dynamic characteristics 74HC366-Q100
Voltages are referenced to GND (ground = 0 V); C
L
= 50 pF unless otherwise specified; see test circuit Figure 8.
Symbol Parameter Conditions Min Typ Max Unit
T
amb
=25C
t
pd
propagation delay nA to nY; see Figure 6
[1]
V
CC
= 2.0 V - 33 100 ns
V
CC
= 4.5 V - 12 20 ns
V
CC
= 5 V; C
L
= 15 pF - 10 - ns
V
CC
= 6.0 V - 10 17 ns
t
en
enable time OEn to nY; see Figure 7
[2]
V
CC
= 2.0 V - 44 150 ns
V
CC
= 4.5 V - 16 30 ns
V
CC
= 6.0 V - 13 26 ns
t
dis
disable time OEn to nY; see Figure 7
[3]
V
CC
= 2.0 V - 55 150 ns
V
CC
= 4.5 V - 20 30 ns
V
CC
= 6.0 V - 16 26 ns
t
t
transition time see Figure 6
[4]
V
CC
= 2.0 V - 14 60 ns
V
CC
=4.5V - 5 12 ns
V
CC
=6.0V - 4 10 ns
C
PD
power dissipation
capacitance
per buffer; V
I
=GNDtoV
CC
[5]
-30- pF
T
amb
= 40 Cto+85C
t
pd
propagation delay nA to nY; see Figure 6
[1]
V
CC
= 2.0 V - - 125 ns
V
CC
=4.5V --25ns
V
CC
=6.0V --21ns
t
en
enable time OEn to nY; see Figure 7
[2]
V
CC
= 2.0 V - - 190 ns
V
CC
=4.5V --38ns
V
CC
=6.0V --33ns
74HC_HCT366_Q100 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 7 August 2012 10 of 19
NXP Semiconductors
74HC366-Q100; 74HCT366-Q100
Hex buffer/line driver; 3-state; inverting
[1] t
pd
is the same as t
PHL
and t
PLH
.
[2] t
en
is the same as t
PZH
and t
PZL
.
[3] t
dis
is the same as t
PHZ
and t
PLZ
.
[4] t
t
is the same as t
THL
and t
TLH
.
[5] C
PD
is used to determine the dynamic power dissipation (P
D
in W).
P
D
=C
PD
V
CC
2
f
i
N + (C
L
V
CC
2
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in V;
N = number of inputs switching;
(C
L
V
CC
2
f
o
) = sum of outputs.
t
dis
disable time OEn to nY; see Figure 7
[3]
V
CC
= 2.0 V - - 190 ns
V
CC
=4.5V --38ns
V
CC
=6.0V --33ns
t
t
transition time see Figure 6
[4]
V
CC
=2.0V --75ns
V
CC
=4.5V --15ns
V
CC
=6.0V --13ns
T
amb
= 40 C to +125 C
t
pd
propagation delay nA to nY; see Figure 6
[1]
V
CC
= 2.0 V - - 150 ns
V
CC
=4.5V --30ns
V
CC
=6.0V --26ns
t
en
enable time OEn to nY; see Figure 7
[2]
V
CC
= 2.0 V - - 225 ns
V
CC
=4.5V --45ns
V
CC
=6.0V --38ns
t
dis
disable time OEn to nY; see Figure 7
[3]
V
CC
= 2.0 V - - 225 ns
V
CC
=4.5V --45ns
V
CC
=6.0V --38ns
t
t
transition time see Figure 6
[4]
V
CC
=2.0V --90ns
V
CC
=4.5V --18ns
V
CC
=6.0V --15ns
Table 8. Dynamic characteristics 74HC366-Q100
…continued
Voltages are referenced to GND (ground = 0 V); C
L
= 50 pF unless otherwise specified; see test circuit Figure 8.
Symbol Parameter Conditions Min Typ Max Unit
74HC_HCT366_Q100 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 7 August 2012 11 of 19
NXP Semiconductors
74HC366-Q100; 74HCT366-Q100
Hex buffer/line driver; 3-state; inverting
[1] t
pd
is the same as t
PHL
and t
PLH
.
[2] t
en
is the same as t
PZH
and t
PZL
.
[3] t
dis
is the same as t
PHZ
and t
PLZ
.
[4] t
t
is the same as t
THL
and t
TLH
.
[5] C
PD
is used to determine the dynamic power dissipation (P
D
in W).
P
D
=C
PD
V
CC
2
f
i
N + (C
L
V
CC
2
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in V;
N = number of inputs switching;
(C
L
V
CC
2
f
o
) = sum of outputs.
Table 9. Dynamic characteristics 74HCT366-Q100
Voltages are referenced to GND (ground = 0 V); C
L
= 50 pF unless otherwise specified; see test circuit Figure 8.
Symbol Parameter Conditions Min Typ Max Unit
T
amb
=25C
t
pd
propagation delay nA to nY; see Figure 6
[1]
V
CC
= 4.5 V - 13 24 ns
V
CC
=5 V; C
L
= 15 pF - 11 - ns
t
en
enable time OEn to nY; V
CC
= 4.5 V; see Figure 7
[2]
- 1635ns
t
dis
disable time OEn to nY; V
CC
= 4.5 V; see Figure 7
[3]
- 2035ns
t
t
transition time V
CC
=4.5V; see Figure 6
[4]
- 5 12 ns
C
PD
power dissipation
capacitance
per buffer; V
I
=GND to(V
CC
1.5 V)
[5]
-30-pF
T
amb
= 40 C to +85 C
t
pd
propagation delay nA to nY; V
CC
=4.5V; see Figure 6
[1]
--30ns
t
en
enable time OEn to nY; V
CC
= 4.5 V; see Figure 7
[2]
--44ns
t
dis
disable time OEn to nY; V
CC
= 4.5 V; see Figure 7
[3]
--44ns
t
t
transition time V
CC
=4.5V; see Figure 6
[4]
--15ns
T
amb
= 40 C to +125 C
t
pd
propagation delay nA to nY; V
CC
=4.5V; see Figure 6
[1]
--36ns
t
en
enable time OEn to nY; V
CC
= 4.5 V; see Figure 7
[2]
--53ns
t
dis
disable time OEn to nY; V
CC
= 4.5 V; see Figure 7
[3]
--53ns
t
t
transition time V
CC
=4.5V; see Figure 6
[4]
--18ns
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74HC366PW-Q100,118

Mfr. #:
Buy 74HC366PW-Q100,118
Manufacturer:
Nexperia
Description:
Buffers & Line Drivers 74HC366PW-Q100/TSSOP16/REEL 13
Lifecycle:
New from this manufacturer.
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