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MRF5S21150HR3 MRF5S21150HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for W-CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
tions. To be used in Class AB for P C N - P CS / ce l l ula r r a di o a n d WLL
applications.
• Typical 2-Carrier W- CDMA Performance: V
DD
= 28 Volts, I
DQ
= 1300 mA,
P
out
= 33 Watts Avg., Full Frequency Band, Channel Bandwidth =
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 12.5 dB
Efficiency — 25%
IM3 @ 10 MHz Offset — -37 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — -39 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 125 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V
DD
Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, 40
µ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain-Source Voltage V
DSS
-0.5, +65 Vdc
Gate-Source Voltage V
GS
-0.5, +15 Vdc
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
380
2.2
W
W/°C
Storage Temperature Range T
stg
- 65 to +150 °C
Case Operating Temperature T
C
150 °C
Operating Junction Temperature T
J
200 °C
CW Operation @ T
C
= 25°C
Derate above 25°C
CW 150
0.84
W
W/°C
Table 2. Thermal Characteristics
Characteristic Symbol Value
(1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 100 W CW
Case Temperature 75°C, 33 W CW
R
θ
JC
0.46
0.47
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf
.
Select Documentation/Application Notes - AN1955.
MRF5S21150H
Rev. 1, 5/2006
Freescale Semiconductor
Technical Data
MRF5S21150HR3
MRF5S21150HSR3
2110-2170 MHz, 33 W AVG., 28 V
2 x W-CDMA
LATERAL N- CHANNEL
RF POWER MOSFETs
CASE 465C- 02, STYLE 1
NI- 880S
MRF5S21150HSR3
CASE 465B- 03, STYLE 1
NI- 880
MRF5S21150HR3
Freescale Semiconductor, Inc., 2006, 2009. All rights reserved.