AR
HIVE INF
RMATI
N
ARCHIVE INFORMATION
6
RF Device Data
Freescale Semiconductor
MRF5S21150HR3 MRF5S21150HSR3
TYPICAL CHARACTERISTICS
Figure 8. 2-Carrier W-CDMA ACPR, IM3,
Power Gain and Drain Efficiency
versus Output Power
220
10
9
100
T
J
, JUNCTION TEMPERATURE (°C)
Figure 9. MTTF Factor versus Junction Temperature
This above graph displays calculated MTTF in hours x ampere
2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by I
D
2
for MTTF in a particular application.
10
8
10
7
10
6
120 140 160 180 200
0 −55
P
out
, OUTPUT POWER (WATTS) AVG. (W−CDMA)
IM3 (dBc), ACPR (dBc)
30
−25
25
−30
20
−35
15
−40
5
−50
1 10 100
η
D
G
ps
ACPR
IM3
−45
10
V
DD
= 28 Vdc, I
DQ
= 1300 mA, f1 = 2135 MHz,
f2 = 2145 MHz, 2−Carrier W−CDMA, 10 MHz
Carrier Spacing, 3.84 MHz Channel Bandwidth,
PAR = 8.5 dB @ 0.01% Probability (CCDF)
MTTF FACTOR (HOURS x AMPS
2
)
η
D
, DRAIN EFFICIENCY (%), G
ps
, POWER GAIN (dB)
W- CDMA TEST SIGNAL
10
0.0001
100
0
PEAK−TO−AVERAGE (dB)
Figure 10. CCDF W-CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single-Carrier Test Signal
PROBABILITY (%)
10
1
0.1
0.01
0.001
2468
20515100−5−10−15−20−25 25
Figure 11. 2-Carrier W-CDMA Spectrum
f, FREQUENCY (MHz)
−110
−120
−70
−20
−80
−60
−50
(dB)
−90
−100
−40
−30
3.84 MHz
Channel BW
−IM3 in
3.84 MHz BW
+IM3 in
3.84 MHz BW
−ACPR in
3.84 MHz BW
+ACPR in
3.84 MHz BW
W−CDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @ ±5 MHz Offset. IM3 Measured in
3.84 MHz Bandwidth @ ±10 MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF
