SIA513DJ-T1-GE3 Datasheet SIA513DJ-T1-GE3 | P1-P3

Vishay Siliconix

SiA513DJ

New Product

Document Number: 70443

S-80437-Rev. B, 03-Mar-08

www.vishay.com

1

N- and P-Channel 20-V (D-S) MOSFET

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

(Ω)I

D

(A) Q

g

(Typ.)

N-Channel 20

0.060 at V

GS

= 4.5 V

4.5

a

3.5 nC

0.092 at V

GS

= 2.5 V

4.5

a

P-Channel - 20

0.110 at V

GS

= - 4.5 V

- 4.5

a

3 nC

0.185 at V

GS

= - 2.5 V

- 4.5

a

Ordering Information: SiA513DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

G

1

D

1

S

1

S

2

G

2

D

2

P-Channel MOSFET

Marking Code

X X X

E B X

Lot Traceability

and Date code

Part # code

S

1

D

1

G

2

S

2

G

1

D

2

1

6

5

4

2

3

2.05 mm

PowerPAK SC-70-6 Dual

D

1

D

2

Notes:

a. Package limited.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. See Solder Profile (

http://www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under Steady State conditions is 110 °C/W.

ABSOLUTE MAXIMUM RATINGS T

A

= 25 °C, unless otherwise noted

Parameter Symbol N-Channel P-Channel Unit

Drain-Source Voltage

V

DS

20 - 20

V

Gate-Source Voltage

V

GS

± 12

Continuous Drain Current (T

J

= 150 °C)

T

C

= 25 °C

I

D

4.5

a

- 4.5

a

A

T

C

= 70 °C

4.5

a

- 4.5

a

T

A

= 25 °C

4.5

a, b, c

- 3.3

b, c

T

A

= 70 °C

3.2

b, c

- 2.4

b, c

Pulsed Drain Current

I

DM

15 - 10

Source Drain Current Diode Current

T

C

= 25 °C

I

S

4.5

a

- 4.5

a

T

A

= 25 °C

1.6

b, c

- 1.6

b, c

Maximum Power Dissipation

T

C

= 25 °C

P

D

6.5 6.5

W

T

C

= 70 °C

55

T

A

= 25 °C

1.9

b, c

1.9

b, c

T

A

= 70 °C

1.2

b, c

1.2

b, c

Operating Junction and Storage Temperature Range

T

J

, T

stg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)

d, e

260

THERMAL RESISTANCE RATINGS

Parameter Symbol

N-Channel P-Channel

Unit

Typ. Max. Typ. Max.

Maximum Junction-to-Ambient

b, f

t ≤ 5 s R

thJA

52 65 52 65

°C/W

Maximum Junction-to-Case (Drain) Steady State

R

thJC

12.5 16 12.5 16

RoHS

COMPLIANT

FEATURES

• Halogen-free

• TrenchFET

®

Power MOSFETs

• New Thermally Enhanced PowerPAK

®

SC-70 Package

- Small Footprint Area

- Low On-Resistance

APPLICATIONS

• Portable Devices

www.vishay.com

2

Document Number: 70443

S-80437-Rev. B, 03-Mar-08

Vishay Siliconix

SiA513DJ

New Product

Notes:

a. Guaranteed by design, not subject to production testing.

b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

SPECIFICATIONS T

J

= 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage

V

DS

V

GS

= 0 V, I

D

= 250 µA

N-Ch 20

V

GS

= 0 V, I

D

= - 250 µA

P-Ch - 20

V

DS

Temperature Coefficient ΔV

DS

/T

J

I

D

= 250 µA

N-Ch 22

mV/°C

I

D

= - 250 µA

P-Ch - 16

V

GS(th)

Temperature Coefficient ΔV

GS(th)

/T

J

I

D

= 250 µA

N-Ch - 3.5

I

D

= - 250 µA

P-Ch 2.5

Gate Threshold Voltage

V

GS(th)

V

DS

= V

GS

, I

D

= 250 µA

N-Ch 0.6 1.5

V

DS

= V

GS

, I

D

= - 250 µA

P-Ch - 0.6 - 1.5

Gate-Body Leakage

I

GSS

V

DS

= 0 V, V

GS

= ± 12 V

N-Ch ± 100

nA

P-Ch ± 100

Zero Gate Voltage Drain Current

I

DSS

V

DS

= 20 V, V

GS

= 0 V

N-Ch 1

µA

V

DS

= - 20 V, V

GS

= 0 V

P-Ch - 1

V

DS

= 20 V, V

GS

= 0 V, T

J

= 55 °C

N-Ch 10

V

DS

= - 20 V, V

GS

= 0 V, T

J

= 55 °C

P-Ch - 10

On-State Drain Current

b

I

D(on)

V

DS

≥ 5 V, V

GS

= 4.5 V

N-Ch 10

A

V

DS

≤ - 5 V, V

GS

= - 4.5 V

P-Ch - 5

Drain-Source On-State Resistance

b

R

DS(on)

V

GS

= 4.5 V, I

D

= 3.4 A

N-Ch 0.050 0.060

Ω

V

GS

= - 4.5 V, I

D

= - 2.5 A

P-Ch 0.091 0.110

V

GS

= 2.5 V, I

D

= 1.1 A

N-Ch 0.076 0.092

V

GS

= - 2.5 V, I

D

= - 0.54 A

P-Ch 0.152 0.185

Forward Transconductance

b

g

fs

V

DS

= 10 V, I

D

= 3.4 A

N-Ch 8

S

V

DS

= - 10 V, I

D

= - 2.5 A

P-Ch 3.5

Dynamic

a

Input Capacitance

C

iss

N-Channel

V

DS

= 10 V, V

GS

= 0 V, f = 1 MHz

P-Channel

V

DS

= - 10 V, V

GS

= 0 V, f = 1 MHz

N-Ch 360

pF

P-Ch 250

Output Capacitance

C

oss

N-Ch 70

P-Ch 70

Reverse Transfer Capacitance

C

rss

N-Ch 40

P-Ch 45

Total Gate Charge

Q

g

V

DS

= 10 V, V

GS

= 10 V, I

D

= 4.5 A

N-Ch 7.5 12

nC

V

DS

= - 10 V, V

GS

= - 10 V, I

D

= - 3.3 A

P-Ch 6 9

N-Channel

V

DS

= 10 V, V

GS

= 4.5 V, I

D

= 4.5 A

P-Channel

V

DS

= - 10 V, V

GS

= - 4.5 V, I

D

= - 3.3 A

N-Ch 3.5 5.3

P-Ch 3 4.5

Gate-Source Charge

Q

gs

N-Ch 0.9

P-Ch 0.7

Gate-Drain Charge

Q

gd

N-Ch 0.7

P-Ch 0.9

Gate Resistance

R

g

f = 1 MHz

N-Ch 2.5

Ω

P-Ch 8

Document Number: 70443

S-80437-Rev. B, 03-Mar-08

www.vishay.com

3

Vishay Siliconix

SiA513DJ

New Product

Notes:

a. Guaranteed by design, not subject to production testing.

b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS T

J

= 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Dynamic

a

Tu r n - On D e l ay T i m e

t

d(on)

N-Channel

V

DD

= 10 V, R

L

= 2.8 Ω

I

D

≅ 3.6 A, V

GEN

= 4.5 V, R

g

= 1 Ω

P-Channel

V

DD

= - 10 V, R

L

= 3.9 Ω

I

D

≅ - 2.6 A, V

GEN

= - 4.5 V, R

g

= 1 Ω

N-Ch 10 15

ns

P-Ch 20 30

Rise Time

t

r

N-Ch 40 60

P-Ch 45 70

Turn-Off Delay Time

t

d(off)

N-Ch 20 30

P-Ch 15 25

Fall Time

t

f

N-Ch 30 45

P-Ch 10 15

Tu r n - On D e l a y T i m e

t

d(on)

N-Channel

V

DD

= 10 V, R

L

= 2.8 Ω

I

D

≅ 3.6 A, V

GEN

= 10 V, R

g

= 1 Ω

P-Channel

V

DD

= - 10 V, R

L

= 3.9 Ω

I

D

≅ - 2.6 A, V

GEN

= - 10 V, R

g

= 1 Ω

N-Ch 5 10

P-Ch 4 8

Rise Time

t

r

N-Ch 15 25

P-Ch 12 20

Turn-Off Delay Time

t

d(off)

N-Ch 15 25

P-Ch 12 20

Fall Time

t

f

N-Ch 10 15

P-Ch 5 10

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

I

S

T

C

= 25 °C

N-Ch 4.5

A

P-Ch - 4.5

Pulse Diode Forward Current

a

I

SM

N-Ch 15

P-Ch - 10

Body Diode Voltage

V

SD

I

S

= 3.6 A, V

GS

= 0 V

N-Ch 0.8 1.2

V

I

S

= - 2.6 A, V

GS

= 0 V

P-Ch - 0.8 - 1.2

Body Diode Reverse Recovery Time

t

rr

N-Channel

I

F

= 3.6 A, di/dt = 100 A/µs, T

J

= 25 °C

P-Channel

I

F

= - 2.6 A, di/dt = - 100 A/µs, T

J

= 25 °C

N-Ch 15 30

ns

P-Ch 20 40

Body Diode Reverse Recovery Charge

Q

rr

N-Ch 10 20

nC

P-Ch 10 20

Reverse Recovery Fall Time

t

a

N-Ch 10

ns

P-Ch 8

Reverse Recovery Rise Time

t

b

N-Ch 5

P-Ch 12

SIA513DJ-T1-GE3

SIA513DJ-T1-GE3

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