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Document Number: 70443
S-80437-Rev. B, 03-Mar-08
Vishay Siliconix
SiA513DJ
New Product
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
2
4
6
8
10
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V
DS
)V( egatloV ecruoS-ot-niarD -
V
GS
= 5 thru 3 V
- Drain Current (A)I
D
2.5 V
1.5 V
2 V
0.00
0.05
0.10
0.15
0.20
0.25
0.30
02468 10
I
D
- Drain Current (A)
V
GS
= 2.5 V
- On-Resistance (Ω)R
DS(on)
V
GS
= 4.5 V
I
D
= 3.3 A
0
2
4
6
8
10
02468
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
V
DS
= 10 V
V
DS
= 16 V
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
1
2
3
4
5
0.0 0.5 1.0 1.5 2.0 2.5
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
T
C
= 25 °C
T
C
= - 55 °C
T
C
= 125 °C
0
100
200
300
400
048121620
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
C
iss
C
oss
C
rss
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125 150
T
J
- Junction Temperature (°C)
V
GS
= 2.5 V
(Normalized)
- On-ResistanceR
DS(on)
I
D
= 2.5 A
V
GS
= 4.5 V
