AFT23H160--25SR3
3
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics
(T
A
=25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Functional Tests
(1,2)
(In Freescale Doherty Test Fixture, 50 ohm system) V
DD
=28Vdc,I
DQA
= 450 mA, V
GSB
=0.6Vdc,P
out
=32WAvg.,
f = 2300 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in
3.84 MHz Channel Bandwidth @ 5MHzOffset.
Power Gain
G
ps
15.3 16.7 18.3 dB
Drain Efficiency
D
43.0 46.6 — %
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF PAR 7.4 8.0 — dB
Adjacent Channel Power Ratio ACPR — –31.7 –28.0 dBc
Load Mismatch
(2)
(In Freescale Doherty Test Fixture, 50 ohm system) I
DQA
= 450 mA, V
GSB
= 0.6 Vdc, f = 2300 MHz
VSWR 10:1 at 32 Vdc, 224 W CW Output Power
(3 dB Input Overdrive from 114 W CW Rated Power)
No Device Degradation
Typical Performance (In Freescale Doherty Test Fixture, 50 ohm system) V
DD
=28Vdc,I
DQA
= 450 mA, V
GSB
=0.6Vdc,
2300–2400 MHz Bandwidth
P
out
@ 1 dB Compression Point, CW P1dB — 114 — W
P
out
@ 3 dB Compression Point
(3)
P3dB — 203 — W
AM/PM
(Maximum value measured at the P3dB compression point across
the 2300–2400 MHz frequency range)
— –14 —
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBW
res
— 95 — MHz
Gain Flatness in 100 MHz Bandwidth @ P
out
=32WAvg. G
F
— 1.3 — dB
Gain Variation over Temperature
(–30Cto+85C)
G — 0.008 — dB/C
Output Power Variation over Temperature
(–30Cto+85C)
P1dB — 0.008 — dB/C
Table 5. Ordering Information
Device Tape and Reel Information Package
AFT23H160--25SR3 R3 Suffix = 250 Units, 56 mm Tape Width, 13--inch Reel NI--880XS--4L4S
1. Part internally matched both on input and output.
2. Measurements made with device in an asymmetrical Doherty configuration.
3. P3dB = P
avg
+ 7.0 dB where P
avg
is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
