OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

AFT23H160-25SR3

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
AFT23H160--25SR3
7
RF Device Data
Freescale Semiconductor, Inc.
Table 7. Carrier Side Load Pull Performance — Maximum Power Tuning
V
DD
=28Vdc,I
DQA
= 493 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Z
source
()
Z
in
()
Max Output Power
P1dB
Z
load
(1)
()
Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
2300 7.70 – j15.4 7.58 + j14.9 5.12 – j7.00 18.5 49.4 87 53.6 –12
2350 11.0–j16.4 10.9 + j15.6 5.00 – j7.12 18.5 49.4 87 52.7 –12
2400 17.1 – j18.0 16.9 + j15.7 4.90 – j7.21 18.5 49.4 87 53.6 –13
f
(MHz)
Z
source
()
Z
in
()
Max Output Power
P3dB
Z
load
(2)
()
Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
2300 7.70 – j15.4 7.82 + j15.8 4.96 – j7.92 16.2 50.2 105 54.1 –16
2350 11.0–j16.4 11.8 + j16.8 4.97 – j7.93 16.3 50.2 105 54.2 –17
2400 17.1 – j18.0 19.0 + j16.8 4.98 – j8.06 16.3 50.2 104 53.8 –18
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Z
source
= Measured impedance presented to the input of the device at the package reference plane.
Z
in
= Impedance as measured from gate contact to ground.
Z
load
= Measured impedance presented to the output of the device at the package reference plane.
Table 8. Carrier Side Load Pull Performance — Maximum Drain Efficiency Tuning
V
DD
=28Vdc,I
DQA
= 493 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Z
source
()
Z
in
()
Max Drain Efficiency
P1dB
Z
load
(1)
()
Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
2300 7.70 – j15.4 7.53 + j15.5 11.5 – j2.65 21.0 47.3 54 63.3 –19
2350 11.0–j16.4 11.0 + j16.3 9.63 – j2.57 20.9 47.5 56 63.1 –19
2400 17.1 – j18.0 17.2 + j16.5 7.79 – j3.03 20.6 47.9 61 63.3 –19
f
(MHz)
Z
source
()
Z
in
()
Max Drain Efficiency
P3dB
Z
load
(2)
()
Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
2300 7.70 – j15.4 7.57 + j16.1 9.19 – j4.55 18.4 48.9 78 63.7 –23
2350 11.0–j16.4 11.6 + j17.4 8.35 – j3.56 18.5 48.7 74 63.7 –25
2400 17.1 – j18.0 19.0 + j17.7 7.42 – j3.66 18.4 48.8 76 64.0 –26
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Z
source
= Measured impedance presented to the input of the device at the package reference plane.
Z
in
= Impedance as measured from gate contact to ground.
Z
load
= Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Device
Under
Test
Z
source
Z
in
Z
load
Output Load Pull
Tuner and Test
Circuit
8
RF Device Data
Freescale Semiconductor, Inc.
AFT23H160--25SR3
Table 9. Peaking Side Load Pull Performance — Maximum Power Tuning
V
DD
=28Vdc,V
GSB
=0.6Vdc, Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Z
source
()
Z
in
()
Max Output Power
P1dB
Z
load
(1)
()
Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
2300 7.70 – j15.4 6.47 + j15.8 4.76 – j6.72 13.4 51.0 125 53.0 –23
2350 11.0–j16.4 9.78 + j17.0 4.63 – j6.66 13.5 51.0 126 53.5 –24
2400 16.7 – j15.9 15.4 + j17.5 4.47 – j6.69 13.6 51.0 126 54.2 –25
f
(MHz)
Z
source
()
Z
in
()
Max Output Power
P3dB
Z
load
(2)
()
Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
2300 7.70 – j15.4 6.99 + j16.7 4.85 – j7.29 11.2 51.8 150 54.6 –29
2350 11.0–j16.4 11.1 + j18.0 4.82 – j7.32 11.3 51.7 149 54.5 –31
2400 16.7 – j15.9 18.2 + j17.9 4.82 – j7.44 11.5 51.7 149 54.8 –31
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Z
source
= Measured impedance presented to the input of the device at the package reference plane.
Z
in
= Impedance as measured from gate contact to ground.
Z
load
= Measured impedance presented to the output of the device at the package reference plane.
Table 10. Peaking Side Load Pull Performance — Maximum Drain Efficiency Tuning
V
DD
=28Vdc,V
GSB
=0.6Vdc, Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Z
source
()
Z
in
()
Max Drain Efficiency
P1dB
Z
load
(1)
()
Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
2300 7.70 – j15.4 5.61 + j15.7 8.65 – j1.94 14.4 49.4 88 64.4 –27
2350 11.0–j16.4 8.68 + j17.3 7.79 – j2.72 14.5 49.7 92 64.5 –28
2400 16.7 – j15.9 13.9 + j18.5 6.48 – j3.10 14.6 49.8 96 64.5 –28
f
(MHz)
Z
source
()
Z
in
()
Max Drain Efficiency
P3dB
Z
load
(2)
()
Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
2300 7.70 – j15.4 6.34 + j16.7 9.88 – j3.77 12.3 50.4 109 64.2 –33
2350 11.0–j16.4 10.0 + j18.4 8.16 – j2.83 12.4 50.2 106 64.2 –36
2400 16.7 – j15.9 16.8 + j19.2 6.75 – j3.16 12.6 50.4 110 64.2 –37
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Z
source
= Measured impedance presented to the input of the device at the package reference plane.
Z
in
= Impedance as measured from gate contact to ground.
Z
load
= Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Device
Under
Test
Z
source
Z
in
Z
load
Output Load Pull
Tuner and Test
Circuit
AFT23H160--25SR3
9
RF Device Data
Freescale Semiconductor, Inc.
P1dB – TYPICAL CARRIER LOAD PULL CONTOURS — 2350 MHz
–10
2
–2
IMAGINARY ()
68
102
18
0
–6
–8
416
–4
12
14
–10
2
–2
IMAGINARY ()
68
102
18
0
–6
–8
416
–4
12
14
–10
2
–2
68
102
18
0
–6
–8
416
–4
12
14
IMAGINARY ()
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Gain
Drain Efficiency
Linearity
Output Power
Figure 8. P1dB Load Pull Output Power Contours (dBm)
REAL ()
–10
2
–2
IMAGINARY ()
68
102
18
0
–6
–8
4
Figure 9. P1dB Load Pull Efficiency Contours (%)
REAL ()
Figure 10. P1dB Load Pull Gain Contours (dB)
REAL ()
Figure 11. P1dB Load Pull AM/PM Contours ()
REAL ()
16
–4
12
14
45.5
46
46.5
P
E
47
47.5
48
48.5
49
48
52
54
56
60
62
P
E
50
52
54
56
58
19.5
18
20
20.5
21.5
21
P
E
19
18.5
–14
–12
P
E
–16
–18
–20
–22
–24
–26
–28
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

AFT23H160-25SR3

Mfr. #:
Buy AFT23H160-25SR3
Manufacturer:
NXP / Freescale
Description:
RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 32 W Avg., 28 V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet