High Voltage Latch-Up Proof,
4-/8-Channel Multiplexers
Enhanced Product
ADG5408-EP/ADG5409-EP
Rev. 0 Document Feedback
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FEATURES
Latch-up proof
8 kV human body model (HBM) ESD rating
Low on resistance (13.5 Ω)
±9 V to ±22 V dual-supply operation
9 V to 40 V single-supply operation
Fully specified at ±15 V, ±20 V, +12 V, and +36 V
V
SS
to V
DD
analog signal range
ENHANCED PRODUCT FEATURES
Supports defense and aerospace applications
(AQEC standard)
Military temperature range: –55°C to +125°C
Controlled manufacturing baseline
One assembly/test site
One fabrication site
Enhanced product change notification
Qualification data available on request
APPLICATIONS
Relay replacement
Automatic test equipment
Data acquisition
Instrumentation
Avionics
Communication systems
FUNCTIONAL BLOCK DIAGRAMS
ADG5408-EP
S1
S8
D
ADG5409-EP
S1A
S4B
DA
DB
S4A
S1B
1-OF-4
DECODER
1-OF-8
DECODER
A0 A1 ENA0 A1 A2 EN
13397-001
Figure 1.
GENERAL DESCRIPTION
The ADG5408-EP/ADG5409-EP are monolithic CMOS analog
multiplexers comprising eight single channels and four differential
channels, respectively. The ADG5408-EP switches one of eight
inputs to a common output, as determined by the 3-bit binary
address lines, A0, A1, and A2. The ADG5409-EP switches one
of four differential inputs to a common differential output, as
determined by the 2-bit binary address lines, A0 and A1.
An EN input on both devices enables or disables the device.
When EN is disabled, all channels switch off. The on-resistance
profile is very flat over the full analog input range, which ensures
good linearity and low distortion when switching audio signals.
High switching speed also makes the parts suitable for video
signal switching.
Each switch conducts equally well in both directions when on,
and each switch has an input signal range that extends to the
power supplies. In the off condition, signal levels up to the
supplies are blocked.
The ADG5408-EP/ADG5409-EP do not have V
L
pins; rather, the
logic power supply is generated internally by an on-chip voltage
generator.
Additional application and technical information can be found
in the ADG5408/ADG5409 data sheet.
PRODUCT HIGHLIGHTS
1. Trench isolation guards against latch-up. A dielectric trench
separates the P and N channel transistors thereby preventing
latch-up even under severe overvoltage conditions.
2. Low R
ON
.
3. Dual-supply operation. For applications where the analog
signal is bipolar, the ADG5408-EP/ADG5409-EP can be
operated from dual supplies up to ±22 V.
4. Single-supply operation. For applications where the analog
signal is unipolar, the ADG5408-EP/ADG5409-EP can be
operated from a single rail power supply up to 40 V.
5. 3 V logic compatible digital inputs: V
INH
= 2.0 V, V
INL
= 0.8 V.
6. No V
L
logic power supply required.
ADG5408-EP/ADG5409-EP Enhanced Product
Rev. 0 | Page 2 of 18
TABLE OF CONTENTS
Features .............................................................................................. 1
Enhanced Product Features ............................................................ 1
Applications ....................................................................................... 1
Functional Block Diagrams ............................................................. 1
General Description ......................................................................... 1
Product Highlights ........................................................................... 1
Revision History ............................................................................... 2
Specifications ..................................................................................... 3
±15 V Dual Supply ....................................................................... 3
±20 V Dual Supply ....................................................................... 4
12 V Single Supply ........................................................................ 5
36 V Single Supply .........................................................................6
Continuous Current per Channel, Sx or D ................................8
Absolute Maximum Ratings ............................................................9
ESD Caution...................................................................................9
Pin Configurations and Function Descriptions ......................... 10
Typical Performance Characteristics ........................................... 12
Test Circuits ..................................................................................... 16
Outline Dimensions ....................................................................... 18
Ordering Guide .......................................................................... 18
REVISION HISTORY
9/15—Revision 0: Initial Version
Enhanced Product ADG5408-EP/ADG5409-EP
Rev. 0 | Page 3 of 18
SPECIFICATIONS
±15 V DUAL SUPPLY
V
DD
= +15 V ± 10%, V
SS
= −15 V ± 10%, GND = 0 V, unless otherwise noted.
Table 1.
Parameter 25°C −40°C to +85°C −55°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range V
DD
to V
SS
V
On Resistance, R
ON
13.5 Ω typ V
S
= ±10 V, I
S
= −10 mA; see Figure 24
15 18 22 Ω max V
DD
= +13.5 V, V
SS
= −13.5 V
On-Resistance Match Between
Channels, ∆R
ON
0.3 Ω typ V
S
= ±10 V, I
S
= −10 mA
0.8 1.3 1.4 Ω max
On-Resistance Flatness, R
FLAT (ON)
1.8 Ω typ V
S
= ±10 V, I
S
= −10 mA
2.2 2.6 3 Ω max
LEAKAGE CURRENTS V
DD
= +16.5 V, V
SS
= −16.5 V
Source Off Leakage, I
S
(Off) ±0.05 nA typ V
S
= ±10 V, V
D
=
10 V; see Figure 27
±0.25 ±1 ±7 nA max
Drain Off Leakage, I
D
(Off) ±0.1 nA typ V
S
= ±10 V, V
D
=
10 V; see Figure 27
±0.4 ±4 ±30 nA max
Channel On Leakage, I
D
(On), I
S
(On) ±0.1 nA typ V
S
= V
D
= ±10 V; see Figure 23
±0.4 ±4 ±30 nA max
DIGITAL INPUTS
Input High Voltage, V
INH
2.0 V min
Input Low Voltage, V
INL
0.8 V max
Input Current, I
INL
or I
INH
0.002 μA typ V
IN
= V
GND
or V
DD
±0.1 μA max
Digital Input Capacitance, C
IN
3 pF typ
DYNAMIC CHARACTERISTICS
1
Transition Time, t
TRANSITION
170 ns typ R
L
= 300 Ω, C
L
= 35 pF
217 258 292 ns max V
S
= 10 V; see Figure 30
t
ON
(EN) 140 ns typ R
L
= 300 Ω, C
L
= 35 pF
175 213 242 ns max V
S
= 10 V; see Figure 32
t
OFF
(EN) 130 ns typ R
L
= 300 Ω, C
L
= 35 pF
161 183 198 ns max V
S
= 10 V; see Figure 32
Break-Before-Make Time Delay, t
D
50 ns typ R
L
= 300 Ω, C
L
= 35 pF
13 ns min V
S1
= V
S2
= 10 V; see Figure 31
Charge Injection, Q
INJ
115 pC typ
V
S
= 0 V, R
S
= 0 Ω, C
L
= 1 nF;
see Figure 33
Off Isolation −60 dB typ
R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz; see
Figure 26
Channel-to-Channel Crosstalk −60 dB typ
R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz; see
Figure 25
Total Harmonic Distortion + Noise 0.01 % typ
R
L
= 1 kΩ, 15 V p-p, f = 20 Hz to 20 kHz;
see Figure 28
−3 dB Bandwidth R
L
= 50 Ω, C
L
= 5 pF; see Figure 29
ADG5408-EP 50 MHz typ
ADG5409-EP 87 MHz typ
Insertion Loss 0.9 dB typ
R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz;
Figure 29
C
S
(Off) 15 pF typ V
S
= 0 V, f = 1 MHz
C
D
(Off)
ADG5408-EP 102 pF typ V
S
= 0 V, f = 1 MHz
ADG5409-EP 50 pF typ V
S
= 0 V, f = 1 MHz

ADG5409TCPZ-EP

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
Multiplexer Switch ICs 8:1 & Dual 4:1 Latch up proof Muxes
Lifecycle:
New from this manufacturer.
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