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TCET1114G

P1-P3P4-P6P7-P8
TCET1110, TCET1110G
www.vishay.com
Vishay Semiconductors
Rev. 2.0, 08-Aug-11
1
Document Number: 83546
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Optocoupler, Phototransistor Output,
High Temperature, 110 °C, Rated
DESCRIPTION
The TCET1110, TCET1110G consists of a phototransistor
optically coupled to a gallium arsenide infrared-emitting
diode in a 4 pin plastic dual inline package.
APPLICATIONS
Circuits for safe protective separation against electrical
shock according to safety class II (reinforced isolation):
• for appl. class I to IV at mains voltage 300 V
• for appl. class I to III at mains voltage 600 V according
to DIN EN 60747-5-2 (VDE 0884), suitable for:
- Switch-mode power supplies
- Line receiver
- Computer peripheral interface
- Microprocessor system interface
FEATURES
• CTR offered in 9 groups
• Isolation materials according to UL 94 V-O
• Pollution degree 2
(DIN/VDE 0110/resp. IEC 60664)
• Climatic classification 55/100/21
(IEC 60068 part 1)
• Special construction: therefore, extra low coupling
capacity of typical 0.2 pF, high common mode rejection
• Low temperature coefficient of CTR
• Temperature range - 40 °C to + 110 °C
• Rated impulse voltage (transient overvoltage)
V
IOTM
= 6 kV
peak
• Isolation test voltage (partial discharge test voltage)
V
pd
= 1.6 kV
• Rated isolation voltage (RMS includes DC)
V
IOWM
= 600 V
RMS
• Rated recurring peak voltage (repetitive) V
IORM
= 850 V
peak
• Creepage current resistance according to VDE 0303/
IEC 60112 comparative tracking index: CTI 175
• Thickness through insulation 4 mm
• External creepage distance > 8 mm
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
AGENCY APPROVALS
• UL1577, file no. E52744, double protection
• BSI: EN 60065:2002, EN 60950-1:2006
• DIN EN 60747-5-2 (VDE 0884)
•FIMKO
C
E
AC
12
3
4
17197_4
ORDERING INFORMATION
TCET111#-#
PART NUMBER PACKAGE
OPTION
AGENCY CERTIFIED/PACKAGE
CTR (%)
5 mA 10 mA
UL, VDE, BSI, FIMKO 50 to 600 63 to 125 100 to 200 160 to 320
DIP-4 TCET1110 TCET1112 TCET1113 TCET1114
DIP-4, 400 mil - - TCET1113G TCET1114G
7.62 mm
DIP-4
TCET1110, TCET1110G
www.vishay.com
Vishay Semiconductors
Rev. 2.0, 08-Aug-11
2
Document Number: 83546
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1)
Refer to wave profile for soldering conditions for through hole devices (DIP).
Notes
• The thermal model is represented in the thermal network below. Each resistance value given in this model can be used to calculate the
temperatures at each node for a given operating condition. The thermal resistance from board to ambient will be dependent on the type of
PCB, layout and thickness of copper traces. For a detailed explanation of the thermal model, please reference Vishay’s “Thermal
Characteristics of Optocouplers” application note.
(1)
For 2 layer FR4 board (4" x 3" x 0.062").
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Reverse voltage V
R
6V
Forward current I
F
60 mA
Forward surge current t
p
10 μs I
FSM
1.5 A
OUTPUT
Collector emitter voltage V
CEO
70 V
Emitter collector voltage V
ECO
7V
Collector current I
C
50 mA
Collector peak current t
p
/T = 0.5, t
p
10 ms I
CM
100 mA
COUPLER
Isolation test voltage (RMS) t = 1 s V
ISO
5000 V
RMS
Operating ambient temperature range T
amb
- 40 to + 110 °C
Storage temperature range T
stg
- 55 to + 125 °C
Soldering temperature
(1)
2 mm from case, 10 s T
sld
260 °C
THERMAL CHARACTERISTICS
PARAMETER SYMBOL VALUE UNIT
LED power dissipation P
diss
70 mW
Output power dissipation P
diss
70 mW
Maximum LED junction temperature T
jmax.
125 °C
Maximum output die junction temperature T
jmax.
125 °C
Thermal resistance, junction emitter to board
EB
173 °C/W
Thermal resistance, junction emitter to case
EC
149 °C/W
Thermal resistance, junction detector to board
DB
111 °C/W
Thermal resistance, junction detector to case
DC
127 °C/W
Thermal resistance, junction emitter to junction
detector
ED
173 °C/W
Thermal resistance, board to ambient
(1)
BA
197 °C/W
Thermal resistance, case to ambient
(1)
CA
4041 °C/W
T
A
θ
CA
T
C
T
JD
T
JE
T
B
θ
EC
θ
EB
θ
DC
θ
DB
θ
BA
θ
DE
T
A
19996
Package
TCET1110, TCET1110G
www.vishay.com
Vishay Semiconductors
Rev. 2.0, 08-Aug-11
3
Document Number: 83546
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Note
• According to DIN EN 60747-5-2 (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings.
Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage I
F
= 50 mA V
F
1.25 1.6 V
Junction capacitance V
R
= 0, f = 1 MHz C
j
50 pF
OUTPUT
Collector emitter voltage I
C
= 1 mA V
CEO
70 V
Emitter collector voltage I
E
= 100 μA V
ECO
7V
Collector emitter cut-off current V
CE
= 20 V, I
F
= 0 A I
CEO
10 100 nA
COUPLER
Collector emitter saturation voltage I
F
= 10 mA, I
C
= 1 mA V
CEsat
0.3 V
Cut-off frequency
V
CE
= 5 V, I
F
= 10 mA,
R
L
= 100
f
c
110 kHz
Coupling capacitance f = 1 MHz C
k
0.6 pF
CURRENT TRANSFER RATIO (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
I
C
/I
F
V
CE
= 5 V, I
F
= 1 mA
TCET1112,
TCET1112G
CTR 22 45 %
TCET1113,
TCET1113G
CTR 34 70 %
TCET1114,
TCET1114G
CTR 56 90 %
V
CE
= 5 V, I
F
= 5 mA
TCET1110,
TCET1110G
CTR 50 600 %
V
CE
= 5 V, I
F
= 10 mA
TCET1112,
TCET1112G
CTR 63 125 %
TCET1113,
TCET1113G
CTR 100 200 %
TCET1114,
TCET1114G
CTR 160 320 %
SAFETY AND INSULATION RATED PARAMETERS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Partial discharge test voltage -
routine test
100 %, t
test
= 1 s V
pd
1.6 kV
Partial discharge test voltage -
lot test (sample test)
t
Tr
= 60 s, t
test
= 10 s,
(see figure 2)
V
IOTM
8kV
V
pd
1.3 kV
Insulation resistance
V
IO
= 500 V R
IO
10
12
V
IO
= 500 V, T
amb
= 100 °C R
IO
10
11
V
IO
= 500 V, T
amb
= 150 °C
(construction test only)
R
IO
10
9
Forward current I
si
130 mA
Power dissipation P
so
265 mW
Rated impulse voltage V
IOTM
6kV
Safety temperature T
si
150 °C
P1-P3P4-P6P7-P8

TCET1114G

Mfr. #:
Buy TCET1114G
Manufacturer:
Vishay Semiconductors
Description:
Transistor Output Optocouplers Phototransistor Out Single CTR>160-320%
Lifecycle:
New from this manufacturer.
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