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TCET1114G

P1-P3P4-P6P7-P8
TCET1110, TCET1110G
www.vishay.com
Vishay Semiconductors
Rev. 2.0, 08-Aug-11
4
Document Number: 83546
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Derating Diagram Fig. 2 - Test Pulse Diagram for Sample Test according to
DIN EN 60747-5-2 (VDE 0884)/IEC 60747-5-5
Fig. 3 - Test Circuit, Non-Saturated Operation Fig. 4 - Test Circuit, Saturated Operation
0 25 50 75 125
0
50
100
150
200
300
T
si
- Safety Temperature (°C)
150
94 9182-2
100
250
IR-diode
I
si
(mA)
Phototransistor
P
so
(mW)
t
13930
t
1
, t
2
= 1 s to 10 s
t
3
, t
4
= 1 s
t
test
= 10 s
t
stres
= 12 s
V
IOTM
V
pd
V
IOWM
V
IORM
0
t
1
t
test
t
Tr
= 60 s
t
stres
t
3
t
4
t
2
SWITCHING CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Delay time
V
S
= 5 V, I
C
= 2 mA, R
L
= 100 ,
(see figure 3)
t
d
3μs
Rise time
V
S
= 5 V, I
C
= 2 mA, R
L
= 100 ,
(see figure 3)
t
r
3μs
Fall time
V
S
= 5 V, I
C
= 2 mA, R
L
= 100 ,
(see figure 3)
t
f
4.7 μs
Storage time
V
S
= 5 V, I
C
= 2 mA, R
L
= 100 ,
(see figure 3)
t
s
0.3 μs
Turn-on time
V
S
= 5 V, I
C
= 2 mA, R
L
= 100 ,
(see figure 3)
t
on
6μs
Turn-off time
V
S
= 5 V, I
C
= 2 mA, R
L
= 100 ,
(see figure 3)
t
off
5μs
Turn-on time
V
S
= 5 V, I
F
= 10 mA, R
L
= 1 k,
(see figure 4)
t
on
9μs
Turn-off time
V
S
= 5 V, I
F
= 10 mA, R
L
= 1 k,
(see figure 4)
t
off
10 μs
Channel I
Channel II
95 10804
R
G
= 50 Ω
t
p
t
p
= 50 µs
T
= 0.01
+ 5 V
I
F
0
50 Ω 100 Ω
I
F
I
C
= 2 mA; adjusted through
input amplitude
Oscilloscope
R
L
= 1 MΩ
C
L
= 20 pF
Channel I
Channel II
95 10843
R
G
= 50 Ω
t
p
t
p
= 50 µs
T
= 0.01
+ 5 V
I
C
I
F
0
50 Ω
1 kΩ
I
F
= 10 mA
Oscilloscope
R
L
≥
C
L
20 pF
1 MΩ
≤
TCET1110, TCET1110G
www.vishay.com
Vishay Semiconductors
Rev. 2.0, 08-Aug-11
5
Document Number: 83546
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Switching Times
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 6 - Total Power Dissipation vs. Ambient Temperature
Fig. 7 - Forward Current vs. Forward Voltage
Fig. 8 - Relative Current Transfer Ratio vs.
Ambient Temperature
Fig. 9 - Collector Dark Current vs. Ambient Temperature
t
p
t
t
0
0
10 %
90 %
100 %
t
r
t
d
t
on
t
s
t
f
t
off
I
F
I
C
t
p
Pulse duration
t
d
Delay time
t
r
Rise time
t
on
(= t
d
+ t
r
) Turn-on time
t
s
Storage time
t
f
Fall time
t
off
(= t
s
+ t
f
) Turn-off time
96 11698
0
50
100
150
200
250
300
0 20406080100120
T
amb
- Ambient Temperature (°C)
16736
P
tot
- Total Power Dissipation (mW)
Coupled Device
Phototransistor
IR–Diode
0
0.2
0.4
0.6
0.8
1.0
1.2
- 40 - 20 0 20 40 60 80 100 120
T
amb
- Ambient Temperature (°C)
16737
V
CE
= 5 V
I
F
= 5 mA
CTR
rel
- Relative Current Transfer Ratio
0 20 40 60 80 100 120
T
amb
- Ambient Temperature
10 000
1000
100
10
1
I
CEO
- Collector Dark Current,
with open Base (nA)
V
CE
= 30 V
10 V
16738
TCET1110, TCET1110G
www.vishay.com
Vishay Semiconductors
Rev. 2.0, 08-Aug-11
6
Document Number: 83546
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 10 - Collector Current vs. Forward Current
Fig. 11 - Collector Current vs. Collector Emitter Voltage
Fig. 12 - Collector Emitter Saturation Voltage vs.
Collector Current
Fig. 13 - Current Transfer Ratio vs. Forward Current
Fig. 14 - Turn-on/off Time vs. Collector Current
Fig. 15 - Turn-on/off Time vs. Forward Current
0.1 1 10
0.01
0.1
1
100
I
C
- Collector Current (mA)
I
F
- Forward Current (mA)
100
95 11027
10
V
CE
= 5 V
0.1 1 10
0.1
1
10
100
V
CE
- Collector Emitter Voltage (V)
100
95 10985
I
C
- Collector Current (mA)
I
F
= 50 mA
5 mA
2 mA
1 mA
20 mA
10 mA
110
0
0.2
0.4
0.6
0.8
1.0
V
CEsat
- Collector Emitter
Saturation Voltage (V)
I
C
- Collector Current (mA)
100
CTR = 50 %
used
20 % used
95 11028
10 % used
0.1 1 10
1
10
100
1000
CTR - Current Transfer Ratio (%)
I
F
- Forward Current (mA)
100
95 11029
V
CE
= 5 V
04
0
2
4
6
8
10
I
C
- Collector Current (mA)
8
95 11030
t
on
/t
off
- Turn-on /Turn-off Time (µs)
Non-saturated
operation
V
S
= 5 V
R
L
= 100 Ω
t
off
t
on
6
2
01015
0
10
20
30
40
50
I
F
- Forward Current (mA)
20
95 11031
t
on
/t
off
- Turn-on/Turn-off Time (µs)
Saturated operation
V
S
= 5 V
R
L
= 1 kΩ
t
off
t
on
5
P1-P3P4-P6P7-P8

TCET1114G

Mfr. #:
Buy TCET1114G
Manufacturer:
Vishay Semiconductors
Description:
Transistor Output Optocouplers Phototransistor Out Single CTR>160-320%
Lifecycle:
New from this manufacturer.
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