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X00619MA2AL2

P1-P3P4-P6P7-P9P10-P10
This is information on a product in full production.
May 2012 Doc ID 15755 Rev 2 1/10
10
X00619
0.8 A sensitive gate SCR
Datasheet − production data
Features
■ I
T(RMS)
= 0.8 A
■ V
DRM
, V
RRM
= 600 V
■ I
GT
= 30 to 200 µA
Applications
■ Limited gate current topologies
■ Ground fault circuit interrupters
■ Overvoltage crowbar protection in power
supplies
■ Protection in electronic ballasts
■ Capacitive discharge ignitions
■ Ignitors (lighting, oven...)
Description
The X006 SCR can be used as on/off function in
applications where topology does not offer high
current for gate triggering.
This device is optimized in forward voltage drop
and inrush current capabilities for reduced power
losses and high reliability in harsh environments.
Table 1. Device summary
I
T(RMS)
0.8 A
V
DRM
/ V
RRM
600 V
I
GT
30 to 200 µA
A
K
G
TO-92
X00619-MA
A
K
G
A
A
K
G
SOT-223
X00619MN
www.st.com
Characteristics X00619
2/10 Doc ID 15755 Rev 2
1 Characteristics
Table 2. Absolute ratings (limiting values, T
j
= 25 °C unless otherwise specified)
Symbol Parameter Value Unit
I
T(RMS)
On-state rms current (180 °Conduction angle)
TO-92 T
L
= 83 °C
0.8 A
SOT-223 T
c
= 107 °C
IT
(AV)
Average on-state current (180 °Conduction angle)
TO-92 T
L
= 83 °C
0.5 A
SOT-223 T
c
= 107 °C
I
TSM
Non repetitive surge peak on-state current
t
p
= 8.3 ms
T
j
= 25 °C
10
A
t
p
= 10 ms 9
I
²
tI
²
t Value for fusing t
p
= 10 ms T
j
= 25 °C 0.4 A
2
s
di/dt
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, t
r
≤ 100 ns
F = 60 Hz T
j
= 125 °C 50 A/µs
I
GM
Peak gate current t
p
= 20 µs T
j
= 125 °C 1 A
P
G(AV)
Average gate power dissipation T
j
= 125 °C 0.1 W
T
stg
T
j
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
Table 3. Electrical characteristics (T
j
= 25 °C unless otherwise specified)
Symbol Test conditions Value Unit
I
GT
V
D
= 12 V, R
L
= 140 Ω
MIN. 30
µA
MAX.
200
V
GT
0.8 V
V
GD
V
D
= V
DRM,
R
L
= 3.3 kΩ, R
GK
= 1 kΩ T
j
= 125 °C MIN. 0.2 V
V
RG
I
RG
= 10 µA MIN. 5 V
I
H
I
T
= 50 mA, R
GK
= 1 kΩ MAX. 5 mA
I
L
I
G
= 1 mA, R
GK
= 1 kΩ MAX. 6 mA
dV/dt V
D
= 67% V
DRM,
R
GK
= 1 kΩ T
j
= 125 °C MIN. 40 V/µs
Table 4. Static electrical characteristics
Symbol Test conditions Value Unit
V
TM
I
TM
= 1 A, t
p
= 380 µs T
j
= 25 °C
MAX
1.35 V
V
TO
Threshold voltage
T
j
= 125 °C
0.85 V
R
d
Dynamic resistance 245 mΩ
I
DRM
I
RRM
V
DRM
= V
RRM,
R
GK
= 1 kΩ
T
j
= 25 °C 1 µA
T
j
= 125 °C 100
µA
X00619 Characteristics
Doc ID 15755 Rev 2 3/10
Table 5. Thermal resistances
Symbol Parameter Value Unit
R
th(j-l)
Junction to leads (DC) TO-92
Max.
70
°C/W
R
th(j-c)
Junction to case (DC) SOT-223 30
R
th(j-a)
Junction to ambient (DC)
TO-92 150
S = 5 cm
2
SOT-223 60
Figure 1. Maximum average power
dissipation versus average
on-state current
Figure 2. Average and DC on-state current
versus case temperature (SOT-223)
P(W)
0.0
0.2
0.4
0.6
0.0 0.1 0.2 0.3 0.4 0.5 0.6
°°° °
°DC
I (A)
T(AV)
360°
α
α = 30°, 60°, 90°, 120°, 180°, DC
I (A)
T(AV)
0.0
0.2
0.4
0.6
0.8
1.0
0 25 50 75 100 125
SOT-223
T (°C)
l
α = 30°, 60°, 90°, 120°, 180°, DC
Figure 3. Average and DC on-state current
versus lead temperature (TO-92)
Figure 4. Average and DC on-state current
versus ambient temperature (free
air convection)
I (A)
T(AV)
0.0
0.2
0.4
0.6
0.8
1.0
0 25 50 75 100 125
TO-92
T (°C)
l
α = 30°, 60°, 90°, 120°, 180°, DC
I (A)
T(AV)
0.0
0.2
0.4
0.6
0.8
1.0
0 25 50 75 100 125
TO-92
S
CU
= 0.5 cm²
T (°C)
amb
α = 180°
DC
SOT-223
S
CU
= 5 cm²
P1-P3P4-P6P7-P9P10-P10

X00619MA2AL2

Mfr. #:
Buy X00619MA2AL2
Manufacturer:
STMicroelectronics
Description:
SCRs 0.8 A sensitive Gate SCR
Lifecycle:
New from this manufacturer.
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