Characteristics X00619
4/10 Doc ID 15755 Rev 2
Figure 5. Relative variation of thermal
impedance junction to ambient
versus pulse duration
Figure 6. Relative variation of gate trigger,
holding and latching current versus
junction temperature
Z/R
th(j-a) th(j-a)
0.01
0.10
1.00
1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
SOT-223
S
CU
= 5 cm²
TO-92
S
CU
= 0.5 cm²
t (s)
p
I,I,I[T] /
GTHL j
I ,I ,I [T =25°C]
GTHL j
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
-40 -20 0 20 40 60 80 100 120
I
GT
I
H
and I
L
Typical values
T (°C)
j
Figure 7. Relative variation of holding
current versus gate-cathode
resistance (typical values)
Figure 8. Relative variation of dV/dt immunity
versus gate-cathode resistance
(typical values)
I [R ] / I [ =1k ]
HGK H
ΩR
GK
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
1.E-02 1.E-01 1.E+00 1.E+01 1.E+02
R(k)
GK
Ω
dV/dt[R ] / dV/dt[ =1k ]
GK
ΩR
GK
0.1
1.0
10.0
100.0
1.0E-01 1.0E+00 1.0E+01
V
D
= 0.67xV
DRM
R(k)
GK
Ω
Figure 9. Relative variation of dV/dt immunity
versus gate-cathode capacitance
(typical values)
Figure 10. Surge peak on-state current versus
number of cycles
dV/dt[C ] / dV/dt[ =1k ]
GK
ΩR
GK
1
10
100
1 10
V
D
= 0.67xV
DRM
R
gk
= 1 kΩ
C (nF)
GK
0
1
2
3
4
5
6
7
8
9
10
1 10 100 1000
Non repetitive
T
j
initial=25 °C
Repetitive
T
l
= 25 °C
One cycle
tp=10ms
Number of cycles
I (A)
TSM
