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IXBX25N250

P1-P3P4-P6
© 2010 IXYS CORPORATION, All Rights Reserved
High Voltage, High Gain
BIMOSFET
TM
Monolithic
Bipolar MOS Transistor
Symbol Test Conditions Maximum Ratings
V
CES
T
C
= 25°C to 150°C 2500 V
V
CGR
T
J
= 25°C to 150°C, R
GE
= 1MΩ 2500 V
V
GES
Continuous ± 20 V
V
GEM
Transient ± 30 V
I
C25
T
C
= 25°C 55 A
I
C90
T
C
= 90°C 25 A
I
CM
T
C
= 25°C, 1ms 180 A
SSOA V
GE
= 15V, T
VJ
= 125°C, R
G
= 4.7Ω I
CM
= 80 A
(RBSOA) Clamped Inductive Load V
CES
≤ 2000 V
P
C
T
C
= 25°C 300 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
1.6mm (0.062 in.) From Case for 10s 300 °C
T
SOLD
Plastic Body for 10 seconds 260 °C
F
C
Mounting Force 20..120 / 4.5..27 N/lb.
Weight 6 g
DS100044A(10/10)
IXBX25N250
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
BV
CES
I
C
= 250μA, V
GE
= 0V 2500 V
V
GE(th)
I
C
= 250μA, V
CE
= V
GE
2.5 5.0 V
I
CES
V
CE
= 0.8 • V
CES
, V
GE
= 0V 50 μA
T
J
= 125°C 3 mA
I
GES
V
CE
= 0V, V
GE
= ± 20V ±100 nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15V, Note 1 3.3 V
T
J
= 125°C 3.4 V
V
CES
= 2500V
I
C90
= 25A
V
CE(sat)
≤≤
≤≤
≤ 3.3V
Features
z
High Blocking Voltage
z
International Standard Package
z
Low Conduction Losses
Advantages
z
Low Gate Drive Requirement
z
High Power Density
Applications
z
Switch-Mode and Resonant-Mode
Power Supplies
z
Uninterruptible Power Supplies (UPS)
z
Laser Generator
z
Capacitor Discharge Circuit
z
AC Switches
G = Gate E = Emitter
C = Collector Tab = Collector
PLUS247
TM
G
C
E
Tab
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXBX25N250
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
g
fS
I
C
= 25A, V
CE
= 10V, Note 1 11 18 S
C
ies
2450 pF
C
oes
V
CE
= 25V, V
GE
= 0V, f = 1MHz 96 pF
C
res
35 pF
Q
g
103 nC
Q
ge
I
C
= 25A, V
GE
= 15V, V
CE
= 1000V 17 nC
Q
gc
43 nC
t
d(on)
55 ns
t
r
240 ns
t
d(off)
145 ns
t
f
640 ns
t
d(on)
54 ns
t
r
640 ns
t
d(off)
140 ns
t
f
510 ns
R
thJC
0.42 °C/W
R
thCS
0.15 °C/W
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Resistive Switching times, T
J
= 25°C
I
C
= 25A, V
GE
= 15V
V
CE
= 1250V, R
G
= 4.7Ω
Resistive Switching times, T
J
= 125°C
I
C
= 25A, V
GE
= 15V
V
CE
= 1250V, R
G
= 4.7Ω
Reverse Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
V
F
I
F
= 25A, V
GE
= 0V 2.3 V
t
rr
1.6 μs
I
RM
37.2 A
I
F
= 25A, -di
F
/dt = 100A/μs
V
R
= 100V, V
GE
= 0V
Terminals: 1 - Gate
2 - Collector
3 - Emitter
PLUS 247
TM
(IXBX) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A
1
2.29 2.54 .090 .100
A
2
1.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b
1
1.91 2.13 .075 .084
b
2
2.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
*Additional provisions for lead to lead voltage isolation are required at V
DS
> 1200V.
© 2010 IXYS CORPORATION, All Rights Reserved
IXBX25N250
Fig. 1. Output Characteristics @ T
J
= 25ºC
0
5
10
15
20
25
30
35
40
45
50
0 0.5 1 1.5 2 2.5 3 3.5 4
V
CE
- Volts
I
C
- Amperes
V
GE
= 25V
20V
15V
10V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0
50
100
150
200
250
02468101214161820
V
CE
- Volts
I
C
-
Amperes
V
GE
= 25V
20V
10V
15V
Fig. 3. Output Characteristics @ T
J
= 125ºC
0
5
10
15
20
25
30
35
40
45
50
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
V
CE
- Volts
I
C
- Amperes
V
GE
= 25V
20V
15V
10V
5V
Fig. 4. Dependence of V
CE(sat)
on
Junction Temperature
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
V
GE
= 15V
I
C
= 50A
I
C
= 25A
I
C
= 12.5A
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
5 7 9 1113151719212325
V
GE
- Volts
V
CE
- Volts
I
C
= 50A
T
J
= 25ºC
12.5A
25A
Fig. 6. Breakdown & Threshold Voltages
vs. Junction Temperature
0.80
0.85
0.90
0.95
1.00
1.05
1.10
1.15
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
BV
CES
&
V
GE(
th
)
- Normalized
BV
CES
V
GE(
th
)
P1-P3P4-P6

IXBX25N250

Mfr. #:
Buy IXBX25N250
Manufacturer:
Littelfuse
Description:
IGBT Transistors DISC IGBT BIMSFT-VERYHIVOLT
Lifecycle:
New from this manufacturer.
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