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IXBX25N250

P1-P3P4-P6
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXBX25N250
Fig. 7. Input Admittance
0
10
20
30
40
50
60
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5
V
GE
- Volts
I
C
-
Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
5
10
15
20
25
30
0 5 10 15 20 25 30 35 40 45 50 55 60 65
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 10. Gate Charge
0
2
4
6
8
10
12
14
16
0 102030405060708090100110
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 1kV
I
C
= 25A
I
G
= 10mA
Fig. 12. Reverse-Bias Safe Operating Area
0
10
20
30
40
50
60
70
80
90
250 500 750 1000 1250 1500 1750 2000 2250 2500
V
CE
- Volts
I
C
- Amperes
T
J
= 125ºC
R
G
= 4.7Ω
dv / dt < 10V / ns
Fig. 11. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarads
f
= 1 MHz
C
ies
C
oes
C
res
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
10
20
30
40
50
60
70
80
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0
V
F
- Volts
I
F
- Amperes
T
J
= 125ºC
T
J
= 25ºC
© 2010 IXYS CORPORATION, All Rights Reserved
IXBX25N250
Fig. 14. Resistive Turn-on Rise Time vs.
Drain Current
0
100
200
300
400
500
600
700
800
10 15 20 25 30 35 40 45 50
I
C
- Amperes
t
r
- Nanoseconds
R
G
= 4.7Ω, V
GE
= 15V
V
CE
= 1250V
T
J
= 125ºC
T
J
= 25ºC
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
500
600
700
800
900
1000
4 8 12 16 20 24 28 32 36 40 44 48 52
R
G
- Ohms
t
r
- Nanoseconds
40
60
80
100
120
140
t
d
(
on
)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 1250V
I
C
= 25A, 50A
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
100
200
300
400
500
600
700
800
900
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
100
110
120
130
140
150
160
170
180
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 4.7Ω, V
GE
= 15V
V
CE
= 1250V
I
C
= 50A
I
C
= 25A
Fig. 17. Resistive Turn-off Switching Times vs.
Drain Current
100
300
500
700
900
1100
10 15 20 25 30 35 40 45 50
I
C
- Amperes
t
f
- Nanoseconds
100
120
140
160
180
200
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 4.7Ω, V
GE
= 15V
V
CE
= 1250V
T
J
= 125ºC, 25ºC
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
100
200
300
400
500
600
700
800
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 4.7Ω, V
GE
= 15V
V
CE
= 1250V
I
C
= 25A
I
C
= 50A
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
200
300
400
500
600
700
4 8 12 16 20 24 28 32 36 40 44 48 52
R
G
- Ohms
t
f
- Nanoseconds
0
200
400
600
800
1000
t
d
(
off
)
- Nanoseconds
t
f
t
d(off
)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 1250V
I
C
= 50A
I
C
= 25A
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXBX25N250
IXYS REF: B_25N250(6P)9-30-08
Fig. 19. Maximum Transient Thermal Impedance
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
P1-P3P4-P6

IXBX25N250

Mfr. #:
Buy IXBX25N250
Manufacturer:
Littelfuse
Description:
IGBT Transistors DISC IGBT BIMSFT-VERYHIVOLT
Lifecycle:
New from this manufacturer.
Delivery:
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