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BUK7K17-80EX

P1-P3P4-P6P7-P9P10-P12
Nexperia
BUK7K17-80E
Dual N-channel 80 V, 17 mΩ standard level MOSFET
BUK7K17-80E All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 17 August 2017 4 / 12
aaa-026829
10
-1
1 10 10
2
10
3
10
-1
1
10
10
2
V
DS
(V)
I
D
I
D
(A)(A)
DCDC
100 ms100 ms
10 ms10 ms
1 ms1 ms
100 µs100 µs
t
p
= 10 µst
p
= 10 µs
Limit R
DSon
= V
DS
/ I
D
Limit R
DSon
= V
DS
/ I
D
T
mb
= 25 °C; I
DM
is a single pulse
Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage, FET1 and
FET2
aaa-026828
10
-3
10
-2
10
-1
1 10
10
-2
10
-1
1
10
10
2
t
AL
(ms)
I
AL
I
AL
(A)(A)
(1)(1)
(2)(2)
(3)(3)
(1) T
j (init)
= 25°C; (2) T
j (init)
= 150°C; (3) Repetitive Avalanche
Fig. 4. Avalanche rating; avalanche current as a function of avalanche time, FET1 and FET2
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-mb)
thermal resistance
from junction to
mounting base
Fig. 5 - - 2.36 K/W
R
th(j-a)
thermal resistance
from junction to
ambient
Minimum footprint; mounted on a
printed circuit board
- 95 - K/W
Nexperia
BUK7K17-80E
Dual N-channel 80 V, 17 mΩ standard level MOSFET
BUK7K17-80E All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 17 August 2017 5 / 12
003aaj748
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
-2
10
-1
1
10
t
p
(s)
Z
th(j-mb)
Z
th(j-mb)
(K/W)(K/W)
P
t
t
p
T
t
p
δ =
T
single shotsingle shot
δ = 0.5δ = 0.5
0.20.2
0.10.1
0.050.05
0.020.02
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration, FET1 and
FET2
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics FET1 and FET2
I
D
= 250 µA; V
GS
= 0 V; T
j
= 25 °C 80 - - VV
(BR)DSS
drain-source
breakdown voltage
I
D
= 250 µA; V
GS
= 0 V; T
j
= -55 °C 72 - - V
I
D
= 1 mA; V
DS
=V
GS
; T
j
= 25 °C; Fig. 9;
Fig. 10
2.4 3 4 V
I
D
= 1 mA; V
DS
=V
GS
; T
j
= -55 °C;
Fig. 10
- - 4.5 V
V
GS(th)
gate-source threshold
voltage
I
D
= 1 mA; V
DS
=V
GS
; T
j
= 175 °C;
Fig. 10
1 - - V
V
DS
= 80 V; V
GS
= 0 V; T
j
= 25 °C - 0.02 1 µAI
DSS
drain leakage current
V
DS
= 80 V; V
GS
= 0 V; T
j
= 175 °C - - 500 µA
V
GS
= 20 V; V
DS
= 0 V; T
j
= 25 °C - 2 100 nAI
GSS
gate leakage current
V
GS
= -20 V; V
DS
= 0 V; T
j
= 25 °C - 2 100 nA
V
GS
= 10 V; I
D
= 10 A; T
j
= 25 °C;
Fig. 11
- 12.5 16.7 mΩR
DSon
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 10 A; T
j
= 175 °C;
Fig. 12
- - 42 mΩ
Dynamic characteristics FET1 and FET2
Q
G(tot)
total gate charge - 32.4 - nC
Q
GS
gate-source charge - 7.1 - nC
Q
GD
gate-drain charge
I
D
= 10 A; V
DS
= 64 V; V
GS
= 10 V;
T
j
= 25 °C; Fig. 13; Fig. 14
- 10.4 - nC
C
iss
input capacitance - 1701 2262 pF
C
oss
output capacitance
V
DS
= 25 V; V
GS
= 0 V; f = 1 MHz;
T
j
= 25 °C; Fig. 15
- 174 208 pF
Nexperia
BUK7K17-80E
Dual N-channel 80 V, 17 mΩ standard level MOSFET
BUK7K17-80E All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 17 August 2017 6 / 12
Symbol Parameter Conditions Min Typ Max Unit
C
rss
reverse transfer
capacitance
- 104 142 pF
t
d(on)
turn-on delay time - 8.1 - ns
t
r
rise time - 11.1 - ns
t
d(off)
turn-off delay time - 22.5 - ns
t
f
fall time
V
DS
= 60 V; R
L
= 5 Ω; V
GS
= 10 V;
R
G(ext)
= 5 Ω; T
j
= 25 °C
- 13.4 - ns
Source-drain diode FET1 and FET2
V
SD
source-drain voltage I
S
= 10 A; V
GS
= 0 V; T
j
= 25 °C; Fig. 16 - 0.8 1.2 V
t
rr
reverse recovery time - 30.1 - ns
Q
r
recovered charge
I
S
= 10 A; dI
S
/dt = -100 A/µs; V
GS
= 0 V;
V
DS
= 25 V; T
j
= 25 °C
- 37.1 - nC
aaa-026830
0 1 2 3 4
0
10
20
30
40
V
DS
(V)
I
D
I
D
(A)(A)
4 V4 V
V
GS
= 4.5 VV
GS
= 4.5 V
5 V5 V
5.5 V5.5 V
6 V6 V
10 V10 V
T
j
= 25 °C
Fig. 6. Output characteristics; drain current as a
function of drain-source voltage; typical
values, FET1 and FET2
aaa-026832
0 4 8 12 16 20
0
10
20
30
40
50
60
V
GS
(V)
R
DSon
R
DSon
(mΩ)(mΩ)
T
j
= 25 °C; I
D
= 10 A
Fig. 7. Drain-source on-state resistance as a function
of gate-source voltage; typical values, FET1
and FET2
P1-P3P4-P6P7-P9P10-P12

BUK7K17-80EX

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Manufacturer:
Nexperia
Description:
MOSFET BUK7K17-80E/SOT1205/
Lifecycle:
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