Nexperia
BUK7K17-80E
Dual N-channel 80 V, 17 mΩ standard level MOSFET
BUK7K17-80E All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 17 August 2017 7 / 12
aaa-026833
0 1 2 3 4 5 6 7
0
20
40
60
80
V
GS
(V)
I
D
I
D
(A)(A)
T
j
= 25°CT
j
= 25°C175°C175°C
V
DS
= 12 V
Fig. 8. Transfer characteristics; drain current as a
function of gate-source voltage; typical values,
FET1 and FET2
003aah028
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
0 2 4 6
V
GS
(V)
I
D
(A)
maxtyp
min
T
j
= 25 °C; V
DS
= 5 V
Fig. 9. Sub-threshold drain current as a function of
gate-source voltage, FET1 and FET2
003aah027
0
1
2
3
4
5
-60 0 60 120 180
T
j
(
°
C)
V
GS(th)
(V)
max
typ
min
I
D
= 1 mA ; V
DS
= V
GS
Fig. 10. Gate-source threshold voltage as a function of
junction temperature, FET1 and FET2
aaa-026834
0 10 20 30 40
0
10
20
30
40
50
60
I
D
(A)
R
DSon
R
DSon
(mΩ)(mΩ)
4.5 V4.5 V 5 V5 V
6 V6 V
V
GS
= 10 VV
GS
= 10 V
T
j
= 25 °C
Fig. 11. Drain-source on-state resistance as a function
of drain current; typical values, FET1 and FET2
