BC51_52_53PAS_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet Rev. 1 — 19 June 2015 3 of 15
NXP Semiconductors
BC51PAS; BC52PAS; BC53PAS
45 V/60 V/80 V, 1 A PNP medium power transistors
4. Marking
5. Limiting values
Table 5. Marking codes
Type number Marking code
BC51PAS C4
BC51-10PAS C5
BC51-16PAS C6
BC52PAS C7
BC52-10PAS C8
BC52-16PAS C9
BC53PAS CA
BC53-10PAS CB
BC53-16PAS CC
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter
BC51PAS series - 45 V
BC52PAS series - 60 V
BC53PAS series - 100 V
V
CEO
collector-emitter voltage open base
BC51PAS series - 45 V
BC52PAS series - 60 V
BC53PAS series - 80 V
V
EBO
emitter-base voltage open collector - 5V
I
C
collector current - 1A
I
CM
peak collector current single pulse; t
p
1ms - 2A
I
B
base current - 0.3 A
BC51_52_53PAS_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet Rev. 1 — 19 June 2015 4 of 15
NXP Semiconductors
BC51PAS; BC52PAS; BC53PAS
45 V/60 V/80 V, 1 A PNP medium power transistors
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 1 cm
2
.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm
2
.
[5] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and mounting pad for collector 1 cm
2
.
P
tot
total power dissipation T
amb
25 C
[1]
-0.42W
[2]
-0.81W
[3]
-0.83W
[4]
-1.10W
[5]
-1.65W
T
j
junction temperature - 150 C
T
amb
ambient temperature 55 150 C
T
stg
storage temperature 65 150 C
(1) FR4 PCB, 4-layer copper, 1 cm
2
(2) FR4 PCB, single-sided copper, 6 cm
2
(3) FR4 PCB, single-sided copper, 1 cm
2
(4) FR4 PCB, 4-layer copper, standard footprint
(5) FR4 PCB, single-sided copper, standard footprint
Fig 1. Power derating curves
Table 6. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
DPE
DDF
BC51_52_53PAS_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet Rev. 1 — 19 June 2015 5 of 15
NXP Semiconductors
BC51PAS; BC52PAS; BC53PAS
45 V/60 V/80 V, 1 A PNP medium power transistors
6. Thermal characteristics
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 1 cm
2
.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm
2
.
[5] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and mounting pad for collector 1 cm
2
Table 7. Thermal characteristics
Symbol Parameter Conditions Max Unit
R
th(j-a)
thermal resistance from junction to ambient in free air
[1]
298 K/W
[2]
154 K/W
[3]
151 K/W
[4]
114 K/W
[5]
76 K/W
R
th(j-sp)
thermal resistance from junction to solder point in free air 20 K/W
FR4 PCB, single-sided copper, tin-plated and standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration for; typical values
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BC51-10PASX

Mfr. #:
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT 1A PNP Medium Power Transistors
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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