BC51_52_53PAS_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet Rev. 1 — 19 June 2015 8 of 15
NXP Semiconductors
BC51PAS; BC52PAS; BC53PAS
45 V/60 V/80 V, 1 A PNP medium power transistors
7. Characteristics
[1] Pulse test: t
p
300 ms; 0.02.
Table 8. Characteristics
T
amb
= 25
C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off current V
CB
= 30 V; I
E
=0A - - 100 nA
V
CB
= 30 V; I
E
=0A;T
j
= 150 C--10 A
I
EBO
emitter-base cut-off current V
EB
= 5V;I
C
=0A - - 100 nA
h
FE
DC current gain V
CE
= 2V; I
C
= 5mA 63 - -
V
CE
= 2V; I
C
= 150 mA
[1]
63 - 250
V
CE
= 2V; I
C
= 500 mA
[1]
40 - -
h
FE
selection -10 V
CE
= 2V; I
C
= 150 mA
[1]
63 - 160
h
FE
selection -16 V
CE
= 2V; I
C
= 150 mA
[1]
100 - 250
V
CEsat
collector-emitter saturation
voltage
I
C
= 500 mA; I
B
= 50 mA
[1]
--500 mV
V
BE
base-emitter voltage V
CE
= 2V; I
C
= 500 mA
[1]
--1V
C
c
collector capacitance V
CB
= 10 V; I
E
= i
e
=0A; f=1MHz - 15 - pF
f
T
transition frequency V
CE
= 5V; I
C
= 50 mA; f = 100 MHz - 145 - MHz
V
CE
= 2V
(1) T
amb
= 100 C
(2) T
amb
=25C
(3) T
amb
= 55 C
T
amb
=25C
Fig 7. DC current gain as a function of collector
current; typical values
Fig 8. Collector current as a function of
collector-emitter voltage; typical values
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