NTLUF4189NZTAG Datasheet NTLUF4189NZTBG, NTLUF4189NZTAG | P1-P3

March, 2009 − Rev. 1

1 Publication Order Number:

NTLUF4189NZ/D

NTLUF4189NZ

Power MOSFET and

Schottky Diode

30 V, N−Channel with 0.5 A Schottky

Barrier Diode, 1.6 x 1.6 x 0.55 mm

mCoolt Package

Features

• Low Qg and Capacitance to Minimize Switching Losses

• Low Profile UDFN 1.6x1.6 mm for Board Space Saving

• Low VF Schottky Diode

• ESD Protected Gate

• This is a Halide−Free Device

• This is a Pb−Free Device

Applications

• DC-DC Boost Converter

• Color Display and Camera Flash Regulators

• Optimized for Power Management Applications for Portable

Products, such as Cell Phones, PMP, DSC, GPS, and others

MAXIMUM RATINGS (T

J

= 25°C unless otherwise stated)

Parameter Symbol Value Units

Drain-to-Source Voltage V

DSS

30 V

Gate-to-Source Voltage V

GS

±8.0 V

Continuous Drain

Current (Note 1)

Steady

State

T

A

= 25°C

I

D

1.5

A

T

A

= 85°C 1.1

t ≤ 5 s T

A

= 25°C 1.9

Power Dissipation

(Note 1)

Steady

State

T

A

= 25°C

P

D

0.8

W

t ≤ 5 s T

A

= 25°C 1.3

Continuous Drain

Current (Note 2)

Steady

State

T

A

= 25°C

I

D

1.2

A

T

A

= 85°C 0.9

Power Dissipation (Note 2) T

A

= 25°C P

D

0.5 W

Pulsed Drain Current

tp = 10 ms

I

DM

8.0 A

MOSFET Operating Junction and Storage

Temperature

T

J

,

T

STG

-55 to

150

°C

Schottky Operating Junction & Storage

Temperature

T

J

,

T

STG

-55 to

125

°C

Source Current (Body Diode) (Note 2) I

S

1.5 A

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

T

L

260 °C

Gate-to-Source ESD Rating

(HBM) per JESD22−A114F

ESD 1000 V

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq

[2 oz] including traces).

2. Surface-mounted on FR4 board using the minimum recommended pad size

of 30 mm

2

, 2 oz. Cu.

http://onsemi.com

G

S

N−Channel MOSFET

D

K

A

Schottky Diode

30 V

250 mW @ 3.0 V

200 mW @ 4.5 V

0.5 A

R

DS(on)

MAX

0.5 A

0.52 V

I

D

MAXV

(BR)DSS

MOSFET

SCHOTTKY DIODE

V

R

MAX I

F

MAXV

F

TYP

UDFN6

CASE 517AT

mCOOLt

PIN CONNECTIONS

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

1

6

AA = Specific Device Code

M = Date Code

G = Pb−Free Package

AA MG

G

1

350 mW @ 2.5 V

MARKING

DIAGRAM

1

2

3

6

5

4

A

N/C

D

K

G

S

(Top View)

K

D

1.5 A

0.5 A

NTLUF4189NZ

http://onsemi.com

2

DEVICE ORDERING INFORMATION

Device Package Shipping

†

NTLUF4189NZTAG UDFN6

(Pb−Free)

3000 / Tape & Reel

NTLUF4189NZTBG UDFN6

(Pb−Free)

3000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

Schottky Diode Maximum Ratings (T

J

= 25°C unless otherwise stated)

Parameter

Symbol Value Units

Peak Repetitive Reverse Voltage V

RRM

30 V

DC Blocking Voltage V

R

30 V

Average Rectified Forward Current I

F

0.5 A

Thermal Resistance Ratings

Parameter

Symbol Max Units

Junction-to-Ambient – Steady State (Note 3)

R

θJA

155

°C/W

Junction-to-Ambient – t ≤ 5 s (Note 3)

R

θJA

100

Junction-to-Ambient – Steady State min Pad (Note 4)

R

θJA

245

MOSFET Electrical Characteristics (T

J

= 25°C unless otherwise specified)

Parameter Symbol Test Condition Min Typ Max Units

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V

(BR)DSS

V

GS

= 0 V, I

D

= 250 μA

30 V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V

(BR)DSS

/T

J

I

D

= 250 μA, ref to 25°C

22 mV/°C

Zero Gate Voltage Drain Current I

DSS

V

GS

= 0 V,

V

DS

= 24 V

T

J

= 25°C 1.0 mA

T

J

= 85°C 10

Gate-to-Source Leakage Current I

GSS

V

DS

= 0 V, V

GS

= ± 8.0 V 10

mA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

V

GS(TH)

V

GS

= V

DS

, I

D

= 250 mA

0.4 1.1 1.5 V

Negative Threshold Temp. Coefficient V

GS(TH)

/T

J

3.0 mV/°C

Drain−to−Source On Resistance R

DS(on)

V

GS

= 4.5 V, I

D

= 1.5 A 145 200 mW

V

GS

= 3.0 V, I

D

= 0.5 A 185 250

V

GS

= 2.5 V, I

D

= 0.5 A 220 350

Forward Transconductance g

FS

V

DS

= 4.0 V, I

D

= 0.15 A 1.1 S

CHARGES & CAPACITANCES

Input Capacitance

C

ISS

V

GS

= 0 V, f = 1 MHz,

V

DS

= 15 V

95

pF

Output Capacitance C

OSS

15

Reverse Transfer Capacitance C

RSS

10

Total Gate Charge Q

G(TOT)

V

GS

= 4.5 V, V

DS

= 15 V;

I

D

= 1.5 A

1.4 3.0

nC

Threshold Gate Charge Q

G(TH)

0.2

Gate-to-Source Charge Q

GS

0.4

Gate-to-Drain Charge Q

GD

0.4

3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces)

4. Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm

2

, 2 oz. Cu.

5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%

6. Switching characteristics are independent of operating junction temperatures

NTLUF4189NZ

http://onsemi.com

3

MOSFET Electrical Characteristics (T

J

= 25°C unless otherwise specified)

Parameter UnitsMaxTypMinTest ConditionSymbol

SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6)

Turn-On Delay Time

t

d(ON)

V

GS

= 4.5 V, V

DD

= 15 V,

I

D

= 1A, R

G

= 6 W

7.0

ns

Rise Time t

r

4.5

Turn-Off Delay Time t

d(OFF)

10.2

Fall Time t

f

1.2

DRAIN-SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

V

SD

V

GS

= 0 V,

I

S

= 1A

T

J

= 25°C 0.8 1.2

V

T

J

= 85°C 0.75

Reverse Recovery Time t

RR

V

GS

= 0 V, dI

SD

/dt = 100 A/ms,

I

S

= 1 A

10.5

ns

Charge Time t

a

8.9

Discharge Time t

b

1.6

Reverse Recovery Charge Q

RR

2.1 nC

SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T

J

= 25°C unless otherwise specified)

Parameter

Symbol Test Condition Min Typ Max Units

Maximum Instantaneous Forward

Voltage

V

F

I

F

= 10 mA 0.27 0.37

V

I

F

= 100 mA 0.36 0.46

I

F

= 500 mA 0.52 0.62

Maximum Instantaneous

Reverse Current

I

R

V

R

= 10 V 2.0 10 mA

V

R

= 30 V 20 200

SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T

J

= 85°C unless otherwise specified)

Maximum Instantaneous

Forward Voltage

V

F

I

F

= 10 mA 0.2

V

I

F

= 100 mA 0.3

I

F

= 500 mA 0.51

Maximum Instantaneous

Reverse Current

I

R

V

R

= 10 V 80 mA

V

R

= 30 V 525

SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T

J

= 125°C unless otherwise specified)

Maximum Instantaneous

Forward Voltage

V

F

I

F

= 10 mA 0.14

V

I

F

= 100 mA 0.27

I

F

= 500 mA 0.51

Maximum Instantaneous

Reverse Current

I

R

V

R

= 10 V 600 mA

V

R

= 30 V 3000

SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T

J

= 25°C unless otherwise specified)

Capacitance

C V

R

= 5 V, f = 1.0 MHz 6.0 pF

3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces)

4. Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm

2

, 2 oz. Cu.

5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%

6. Switching characteristics are independent of operating junction temperatures

NTLUF4189NZTAG

NTLUF4189NZTAG

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