NTLUF4189NZ
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4
TYPICAL MOSFET CHARACTERISTICS
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) V
GS
, GATE−TO−SOURCE VOLTAGE (V)
543210
0
2
4
6
8
10
2.51.5 43210.5
0
1
2
3
4
5
Figure 3. On−Resistance vs. Gate Voltage Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
, GATE−TO−SOURCE VOLTAGE (V) I
D
, DRAIN CURRENT (A)
3.53.02.52.01.5
0.35
0.10
0.15
0.20
0.25
0.30
98765432
0.10
0.15
0.20
0.25
0.35
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
V
GS
= 4.5 V
T
J
= 25°C
3.5 V
3.0 V
2.5 V
4.0 V
2.0 V
V
DS
= 4 V
T
J
= 25°C
T
J
= 125°C
T
J
= −55°C
T
J
= 25°C
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
V
GS
= 4.5 V
T
J
= 25°C
2.0 V
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
T
J
, JUNCTION TEMPERATURE (°C) V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
1251007550250−25−50
0.6
0.7
0.9
1.0
1.2
1.3
1.5
1.7
302520151050
1
10
100
1000
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
I
DSS
, LEAKAGE (nA)
150
0.8
1.1
1.4
V
GS
= 4.5 V
I
D
= 1.5 A
T
J
= 125°C
V
GS
= 0 V
T
J
= 150°C
3.5
I
D
= 1.5 A
I
D
= 0.5 A
4.54.0
0.30
1010
2.5 V 3.0 V 3.5 V
4.0 V
1.6
T
J
= 85°C
