Electrical Specifications
Stresses greater than those listed may cause permanent damage to the module. This is a
stress rating only, and functional operation of the module at these or any other condi-
tions outside those indicated in each device's data sheet is not implied. Exposure to ab-
solute maximum rating conditions for extended periods may adversely affect reliability.
Table 9: Absolute Maximum Ratings
Symbol Parameter Min Max Units
V
DD
V
DD
supply voltage relative to V
SS
–0.4 1.975 V
V
IN
, V
OUT
Voltage on any pin relative to V
SS
–0.4 1.975 V
Table 10: Operating Conditions
Symbol Parameter Min Nom Max Units Notes
V
DD
V
DD
supply voltage 1.425 1.5 1.575 V
I
VTT
Termination reference current from V
TT
–600 600 mA
V
TT
Termination reference voltage (DC) –
command/address bus
0.49 × V
DD
- 20mV 0.5 × V
DD
0.51 × V
DD
+ 20mV V 1
I
I
Input leakage current;
Any input 0V V
IN
V
DD
;
V
REF
input 0V V
IN
0.95V
(All other pins not under
test = 0V)
Address in-
puts, RAS#,
CAS#, WE#,
BA
–36 0 36 µA
S#, CKE,
ODT, CK, CK#
–18 0 18
DM –4 0 4
I
OZ
Output leakage current;
0V V
OUT
V
DDQ
;
DQ and ODT are disabled;
ODT is HIGH
DQ, DQS,
DQS#
–10 0 10 µA
I
VREF
V
REF
supply leakage current;
V
REFDQ
= V
DD
/2 or V
REFCA
= V
DD
/2
(All other pins not under test = 0V)
–18 0 18 µA
T
A
Module ambient operating
temperature
Commercial 0 70 °C 2, 3
T
C
DDR3 SDRAM component
case operating tempera-
ture
Commercial 0 95 °C 2, 3, 4
Notes:
1. V
TT
termination voltage in excess of the stated limit will adversely affect the command
and address signals’ voltage margin and will reduce timing margins.
2. T
A
and T
C
are simultaneous requirements.
3. For further information, refer to technical note TN-00-08: ”Thermal Applications,”
available on Micron’s web site.
4. The refresh rate is required to double when 85°C < T
C
95°C.
2GB, 4GB, 8GB (x72, ECC, DR) 240-Pin DDR3 UDIMM
Electrical Specifications
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
DRAM Operating Conditions
Recommended AC operating conditions are given in the DDR3 component data sheets.
Component specifications are available at micron.com. Module speed grades correlate
with component speed grades, as shown below.
Table 11: Module and Component Speed Grades
DDR3 components may exceed the listed module speed grades; module may not be available in all listed speed grades
Module Speed Grade Component Speed Grade
-2G1 -093
-1G9 -107
-1G6 -125
-1G4 -15E
-1G1 -187E
-1G0 -187
-80C -25E
-80B -25
Design Considerations
Simulations
Micron memory modules are designed to optimize signal integrity through carefully de-
signed terminations, controlled board impedances, routing topologies, trace length
matching, and decoupling. However, good signal integrity starts at the system level.
Micron encourages designers to simulate the signal characteristics of the system's
memory bus to ensure adequate signal integrity of the entire memory system.
Power
Operating voltages are specified at the DRAM, not at the edge connector of the module.
Designers must account for any system voltage drops at anticipated power levels to en-
sure the required supply voltage is maintained.
2GB, 4GB, 8GB (x72, ECC, DR) 240-Pin DDR3 UDIMM
DRAM Operating Conditions
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
I
DD
Specifications
Table 12: DDR3 I
DD
Specifications and Conditions – 2GB (Die Revision J)
Values are for the MT41J128M8 DDR3 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) com-
ponent data sheet
Parameter Symbol 1333 Units
Operating current 0: One bank ACTIVATE-to-PRECHARGE I
DD0
1
477 mA
Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE I
DD1
1
594 mA
Precharge power-down current: Slow exit I
DD2P0
2
216 mA
Precharge power-down current: Fast exit I
DD2P1
2
270 mA
Precharge quiet standby current I
DD2Q
2
396 mA
Precharge standby current I
DD2N
2
414 mA
Precharge standby ODT current I
DD2NT
1
396 mA
Active power-down current I
DD3P
2
306 mA
Active standby current I
DD3N
2
594 mA
Burst read operating current I
DD4R
1
900 mA
Burst write operating current I
DD4W
1
927 mA
Refresh current I
DD5B
1
1548 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
2
216 mA
Self refresh temperature current (SRT-enabled): MAX T
C
= 95°C I
DD6ET
2
270 mA
All banks interleaved read current I
DD7
1
1521 mA
Reset current I
DD8
2
252 mA
Notes:
1. One module rank in the active I
DD
; the other rank in I
DD2P0
(slow exit).
2. All ranks in this I
DD
condition.
2GB, 4GB, 8GB (x72, ECC, DR) 240-Pin DDR3 UDIMM
I
DD
Specifications
PDF: 09005aef83606b46
jsf18c256_512_1gx72az.pdf - Rev. K 11/15 EN
12
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.

MT18JSF51272AZ-1G6K1

Mfr. #:
Manufacturer:
Micron
Description:
Memory Modules DDR3 4GB EUDIMM
Lifecycle:
New from this manufacturer.
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