Table 13: DDR3 I
DD
Specifications and Conditions – 4GB (Die Revision K)
Values are for the MT41J256M8 DDR3 SDRAM only and are computed from values specified in the 2Gb (256 Meg x 8) com-
ponent data sheet
Parameter Symbol 1866 1600 1333 Units
Operating current 0: One bank ACTIVATE-to-PRECHARGE I
DD0
1
495 486 477 mA
Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE I
DD1
1
630 612 594 mA
Precharge power-down current: Slow exit I
DD2P0
2
216 216 216 mA
Precharge power-down current: Fast exit I
DD2P1
2
270 270 270 mA
Precharge quiet standby current I
DD2Q
2
396 396 396 mA
Precharge standby current I
DD2N
2
414 414 414 mA
Precharge standby ODT current I
DD2NT
1
432 414 396 mA
Active power-down current I
DD3P
2
396 396 396 mA
Active standby current I
DD3N
2
666 630 594 mA
Burst read operating current I
DD4R
1
1098 1008 900 mA
Burst write operating current I
DD4W
1
1134 1035 927 mA
Refresh current I
DD5B
1
1764 1746 1737 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
2
216 216 216 mA
Self refresh temperature current (SRT-enabled): MAX T
C
= 95°C I
DD6ET
2
243 243 243 mA
All banks interleaved read current I
DD7
1
1647 1575 1521 mA
Reset current I
DD8
2
234 234 234 mA
Notes:
1. One module rank in the active I
DD
; the other rank in I
DD2P0
(slow exit).
2. All ranks in this I
DD
condition.
2GB, 4GB, 8GB (x72, ECC, DR) 240-Pin DDR3 UDIMM
I
DD
Specifications
PDF: 09005aef83606b46
jsf18c256_512_1gx72az.pdf - Rev. K 11/15 EN
13
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© 2009 Micron Technology, Inc. All rights reserved.
