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NCS2566DTBR2G

P1-P3P4-P6P7-P9P10-P12P13-P13
NCS2566
http://onsemi.com
4
MAXIMUM RATINGS
Parameter Symbol Rating Unit
Power Supply Voltages V
CC
−0.3 v V
CC
v 5.5 Vdc
Input Voltage Range V
I
−0.3 v V
I
v V
CC
Vdc
Input Differential Voltage Range V
ID
−0.3 v V
I
v V
CC
Vdc
Output Current Per Channel I
O
50 mA
Maximum Junction Temperature (Note 1) T
J
150 °C
Operating Ambient Temperature T
A
−40 to +85 °C
Storage Temperature Range T
stg
−60 to +150 °C
Power Dissipation P
D
(See Graph) mW
Thermal Resistance, Junction−to−Air
R
q
JA
125 °C/W
ESD Protection Voltage (IEC61000−4−2) V
esd
>8000 V
ESD HBM − Human Body Model HBM 4000 V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Power dissipation must be considered to ensure maximum junction temperature (T
J
) is not exceeded.
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated is
limited by the associated rise in junction temperature. For
the plastic packages, the maximum safe junction
temperature is 150°C. If the maximum is exceeded
momentarily, proper circuit operation will be restored as
soon as the die temperature is reduced. Leaving the device
in the “overheated” condition for an extended period can
result in device burnout. To ensure proper operation, it is
important to observe the derating curves.
Figure 2. Power Dissipation vs Temperature
0
200
400
600
800
1000
1200
1400
0102030405060708090100
TEMPERATURE (°C)
POWER DISSIPATION (mV)
1800
1600
−40 −30−20−10
NCS2566
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5
DC ELECTRICAL CHARACTERISTICS (V
CC
= +5.0 V, R
source
= 37.5 W, T
A
= 25°C, inputs AC−coupled with 0.1 µF, all outputs
AC−coupled with 220 µF into 150 W referenced to 400 kHz; unless otherwise specified)
Symbol
Characteristics Conditions Min Typ Max Unit
POWER SUPPLY
V
CC
Supply Voltage Range 4.7 5.0 5.3 V
I
CC
Supply Current 3 SD Channels Active
3 HD Channels Active
3 SD + 3 SD Channels Active
3 SD + 3 HD Channels Active
25
40
50
65
80
mA
I
SD
Shutdown Current No Channel Active 42 80
mA
DC PERFORMANCE
V
i
Input Common Mode Voltage Range GND 1.4 V
PP
V
IL
SD/HD Input Low Level 0 0.8 V
V
IH
SD/HD Input High Level 2.4 V
CC
V
R
pd
Pulldown Resistors on Pins SD_EN and SD/HD_EN 250
kW
OUTPUT CHARACTERISTICS
V
OH
Output Voltage High Level 2.8 V
V
OL
Output Voltage Low Level 200 mV
I
O
Output Current 40 mA
AC ELECTRICAL CHARACTERISTICS FOR STANDARD DEFINITION CHANNELS (Pin Numbers (1, 20) (2, 19), (3, 18),
(7, 14), (8, 13) & (9, 12)) (V
CC
= +5.0 V, V
in
= 1 V
PP
, R
source
= 37.5 W, T
A
= 25°C, Inputs AC−coupled with 0.1 mF, All Outputs
AC−coupled with 220 mF into 150 W Referenced to 400 kHz; unless otherwise specified, SD
/HD = Low)
Symbol
Characteristics Conditions Min Typ Max Unit
A
VSD
Voltage Gain V
in
= 1 V − All SD Channels 5.8 6.0 6.2 dB
BW
SD
Low Pass Filter Bandwidth (Note 3)
−1 dB
−3 dB
5.5
6.5
7.2
8.0
MHz
A
RSD
Stop−Band Attenuation (Note 4) @ 27 MHz 43 50 dB
dG
SD
Differential Gain Error 0.7 %
dF
SD
Differential Phase Error 0.7 °
THD Total Harmonic Distortion V
out
= 1.4 V
PP
@ 3.58 MHz 0.35 %
X
SD
Channel−to−Channel Crosstalk @ 1 MHz & V
in
= 1.4 V
PP
−58 dB
SNR
SD
Signal−to−Noise Ratio NTC−7 test signal, 100 kHz to
4.2 MHz (Note 2)
72 dB
Dt
SD
Propagation Delay @ 4.5 MHz 70 ns
DGD
SD
Group Delay variation 100 kHz to 8 MHz 20 ns
2. SNR = 20 x log (714 mV/RMS Noise)
3. 100% of Tested ICs fit the bandwidth and attenuation tolerance at 25°C.
4. Guaranteed by Characterization.
NCS2566
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6
AC ELECTRICAL CHARACTERISTICS FOR HIGH DEFINITION CHANNELS (Pin Numbers (7, 14), (8, 13) & (9, 12)) (V
CC
= +5.0 V, V
in
= 1 V
PP
, R
source
= 37.5 W, T
A
= 25°C, Inputs AC−coupled with 0.1 mF, All Outputs AC−coupled with 220 mF into 150 W
Referenced to 400 kHz; unless otherwise specified, SD
/HD = High)
Symbol
Characteristics Conditions Min Typ Max Unit
A
VHD
Voltage Gain V
in
= 1 V − All HD Channels 5.8 6.0 6.2 dB
BW
HD
Low Pass Filter Bandwidth
−1 dB (Note 6)
−3 dB (Note 7)
26
30
31
34
MHz
A
RHD
Stop−band Attenuation @ 44.25 MHz (Note 7)
@ 74.25 MHz (Note 6)
33
15
42
dB
THD
HD
Total Harmonic Distortion V
out
= 1.4 V
PP
@ 10 MHz
V
out
= 1.4 V
PP
@ 15 MHz
V
out
= 1.4 V
PP
@ 22 MHz
0.4
0.6
0.8
%
X
HD
Channel−to−Channel Crosstalk @ 1 MHz & V
in
= 1.4 V
PP
−58 dB
SNR
HD
Signal−to−Noise Ratio white signal, 100 kHz to
30 MHz, (Note 5)
72 dB
Dt
HD
Propagation Delay 25 ns
DGD
HD
Group Delay Variation from 100 kHz to 30 MHz 6.0 ns
5. SNR = 20 x log (714 mV/RMS Noise)
6. Guaranteed by characterization.
7. 100% of tested ICs fit the bandwidth and attenuation tolerance at 25°C.
P1-P3P4-P6P7-P9P10-P12P13-P13

NCS2566DTBR2G

Mfr. #:
Buy NCS2566DTBR2G
Manufacturer:
ON Semiconductor
Description:
Video Amplifiers 6 CH VIDEO AMP TRIP SLCT SD/HD
Lifecycle:
New from this manufacturer.
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