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FCP190N65S3

P1-P3P4-P6P7-P9P10-P11
© Semiconductor Components Industries, LLC, 2017
June, 2018 − Rev.2
1 Publication Order Number:
FCP190N65S3/D
FCP190N65S3
Power MOSFET, N-Channel,
SUPERFET
)
III, Easy Drive,
650 V, 17 A, 190 mW
Description
SUPERFET III MOSFET is ON Semiconductor’s brand−new high
voltage super−junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on−resistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provides superior switching performance, and
withstand extreme dv/dt rate.
Consequently, SUPERFET III MOSFET Easy drive series helps
manage EMI issues and allows for easier design implementation.
Features
• 700 V @ T
J
= 150°C
• Typ. R
DS(on)
= 159 mW
• Ultra Low Gate Charge (Typ. Q
g
= 33 nC)
• Low Effective Output Capacitance (Typ. C
oss(eff.)
= 300 pF)
• 100% Avalanche Tested
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Computing / Display Power Supplies
• Telecom / Server Power Supplies
• Industrial Power Supplies
• Lighting / Charger / Adapter
TO−220
CASE 340AT
See detailed ordering and shipping information on page 2 of
this data sheet.
ORDERING INFORMATION
www.onsemi.com
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Data Code (Year & Week)
&K = Lot
FCP190N65S3 = Specific Device Code
MARKING DIAGRAM
V
DSS
R
DS(ON)
MAX I
D
MAX
650 V
190 mW @ 10 V
17 A
POWER MOSFET
D
S
G
D
G
S
$Y&Z&3&K
FCP
190N65S3
FCP190N65S3
www.onsemi.com
2
ABSOLUTE MAXIMUM RATINGS (T
C
= 25°C, Unless otherwise noted)
Symbol
Parameter FCP190N65S3 Unit
V
DSS
Drain to Source Voltage 650 V
V
GSS
Gate to Source Voltage
− DC ±30
V
− AC (f > 1 Hz) ±30
I
D
Drain Current
− Continuous (T
C
= 25°C) 17
A
− Continuous (T
C
= 100°C) 11
I
DM
Drain Current − Pulsed (Note 1) 42.5 A
E
AS
Single Pulsed Avalanche Energy (Note 2) 76 mJ
I
AS
Avalanche Current (Note 2) 2.5 A
E
AR
Repetitive Avalanche Energy (Note 1) 1.44 mJ
dv/dt
MOSFET dv/dt 100
V/ns
Peak Diode Recovery dv/dt (Note 3) 20
P
D
Power Dissipation
(T
C
= 25°C) 144 W
− Derate Above 25°C 1.15 W/°C
T
J
, T
STG
Operating and Storage Temperature Range −55 to +150 °C
T
L
Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds 300 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse−width limited by maximum junction temperature.
2. I
AS
= 2.5 A, R
G
= 25 W, starting T
J
= 25°C.
3. I
SD
≤ 8.5 A, di/dt ≤ 200 A/ms, V
DD
≤ 400 V, starting T
J
= 25°C.
THERMAL CHARACTERISTICS
Symbol Parameter FCP190N65S3 Unit
R
q
JC
Thermal Resistance, Junction to Case, Max. 0.87 _C/W
R
q
JA
Thermal Resistance, Junction to Ambient, Max. 62.5
PACKAGE MARKING AND ORDERING INFORMATION
Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity
FCP190N65S3 FCP190N65S3 TO−220 Tube N/A N/A 50 Units
FCP190N65S3
www.onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Symbol
Parameter Test Conditions Min. Typ. Max. Unit
OFF CHARACTERISTICS
BV
DSS
Drain to Source Breakdown Voltage
V
GS
=0V, I
D
= 1 mA, T
J
=25_C
650 − − V
V
GS
=0V, I
D
= 1 mA, T
J
= 150_C
700 − − V
DBV
DSS
/ DT
J
Breakdown Voltage Temperature
Coefficient
I
D
= 1 mA, Referenced to 25_C
− 0.6 −
V/_C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 650 V, V
GS
=0V − − 1 mA
V
DS
= 520 V, T
C
= 125_C
− 0.89 −
I
GSS
Gate to Body Leakage Current V
GS
= ±30 V, V
DS
=0V − − ±100 nA
ON CHARACTERISTICS
V
GS(th)
Gate Threshold Voltage V
GS
=V
DS
, I
D
= 1.7 mA 2.5 − 4.5 V
R
DS(on)
Static Drain to Source On Resistance V
GS
=10V, I
D
= 8.5 A − 159 190
mW
g
FS
Forward Transconductance V
DS
=20V, I
D
= 8.5 A − 10 − S
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
V
DS
= 400 V, V
GS
= 0 V, f = 1 MHz
− 1350 − pF
C
oss
Output Capacitance − 30 − pF
C
oss(eff.)
Effective Output Capacitance V
DS
= 0 V to 400 V, V
GS
=0V − 300 − pF
C
oss(er.)
Energy Related Output Capacitance V
DS
= 0 V to 400 V, V
GS
=0V − 43 − pF
Q
g(tot)
Total Gate Charge at 10 V
V
DS
= 400 V, I
D
= 8.5 A, V
GS
=10V
(Note 4)
− 33 − nC
Q
gs
Gate to Source Gate Charge − 7.9 − nC
Q
gd
Gate to Drain “Miller” Charge − 14 − nC
ESR Equivalent Series Resistance f = 1 MHz − 7 −
W
SWITCHING CHARACTERISTICS
t
d(on)
Turn-On Delay Time
V
DD
= 400 V, I
D
= 8.5 A, V
GS
=10V,
R
g
= 4.7 W
(Note 4)
− 20 − ns
t
r
Turn-On Rise Time − 22 − ns
t
d(off)
Turn-Off Delay Time − 57 − ns
t
f
Turn-Off Fall Time − 16 − ns
SOURCE-DRAIN DIODE CHARACTERISTICS
I
S
Maximum Continuous Source to Drain Diode Forward Current − − 17 A
I
SM
Maximum Pulsed Source to Drain Diode Forward Current − − 42.5 A
V
SD
Source to Drain Diode Forward Voltage V
GS
= 0V, I
SD
= 8.5 A − − 1.2 V
t
rr
Reverse Recovery Time
V
GS
= 0V, I
SD
= 8.5 A,
dI
F
/dt = 100 A/ms
− 313 − ns
Q
rr
Reverse Recovery Charge − 4.9 −
mC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature typical characteristics.
P1-P3P4-P6P7-P9P10-P11

FCP190N65S3

Mfr. #:
Buy FCP190N65S3
Manufacturer:
ON Semiconductor
Description:
MOSFET SuperFET3 650V 190 mOhm, TO220F PKG
Lifecycle:
New from this manufacturer.
Delivery:
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