FCP190N65S3
www.onsemi.com
4
TYPICAL PERFORMANCE CHARACTERISTICS
467
V
GS
, Gate−Source Voltage (V)
I
D
, Drain Current (A)
35
0
0.0 1.0 1.5
0
0
2
4
6
8
10
I
D
, Drain Current (A)
R
DS(ON)
, Drain−Source
On−Resistance (W)
20
V
SD
, Body Diode Forward Voltage (V)
I
S
, Reverse Drain Current (A)
V
DS
, Drain−Source Voltage (V)
Capacitances (pF)
Q
g
, Total Gate Charge (nC)
V
GS
, Gate−Source Voltage (V)
5
0.1 1 10
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
20
V
DS
, Drain−Source Voltage (V)
I
D
, Drain Current (A)
Figure 3. On−Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and
Temperature
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
3010
0.1
1
10
100
1000
10000
100000
0.1 1 10 100 1000
10 15 20
0.5
89
40
25 30 35
0.1
1
10
50
1
10
50
0.001
0.01
0.1
1
10
100
V
GS
= 0 V
250 ms Pulse Test
25°C
150°C
−55°C
m
250 ms Pulse Test
T
C
= 25°C
V
GS
= 10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
V
DS
= 20 V
250 ms Pulse Test
25°C
−55°C
150°C
0.0
0.2
0.4
0.6
T
C
= 25°C
V
GS
= 10 V
V
GS
= 20 V
50
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
C
oss
V
GS
= 0 V
f = 1 MHz
C
iss
C
rss
I
D
= 8.5 A
V
DS
= 130 V
V
DS
= 400 V
