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5962-8853801PA

P1-P3P4-P6P7-P9P10-P12P13-P13
STANDARD
MICROCIRCUIT DRAWING
SIZE
A
5962-88538
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
REVISION LEVEL
H
SHEET
4
DSCC FORM 2234
APR 97
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part
of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the
solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883 - Test Method Standard Microcircuits.
MIL-STD-1835 - Interface Standard Electronic Component Case Outlines.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 - List of Standard Microcircuit Drawings.
MIL-HDBK-780 - Standard Microcircuit Drawings.
(Copies of these documents are available online at http://quicksearch.dla.mil/
or from the Standardization Document Order
Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text
of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for
device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified
herein.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.
3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.
3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document
revision level control and shall be made available to the preparing and acquiring activity upon request.
3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full
ambient operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical
tests for each subgroup are defined in table I.
3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be
marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer
has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be
marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be
in accordance with MIL-PRF-38535, appendix A.
3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in
MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix A.
STANDARD
MICROCIRCUIT DRAWING
SIZE
A
5962-88538
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
REVISION LEVEL
H
SHEET
5
DSCC FORM 2234
APR 97
TABLE I. Electrical performance characteristics.
Test
Symbol
Conditions 1/ 2/
-55°C ≤ T
A
≤ +125°C
V
S
= ±15 V
Group A
subgroups
Device
type
Limits
Unit
unless otherwise specified Min Max
Input offset voltage
V
IO
R
S
= 50 Ω
1 01,04
±1.0
mV
02,03
±2.0
2,3 01,04
±2.0
02,03
±3.0
M,D,P,L,R 1 01,04
±3.0
Input offset current
I
IO
T
J
= +25°C, -55°C,
V
CM
= 0 V
1,3 3/ All
±50.0
pA
T
J
= +125°C, V
CM
= 0 V
2
±8.0
nA
M,D,P,L,R, V
CM
= 0 V
1 01,04
±300
pA
Input bias current
I
IB
T
J
= +25°C, -55°C,
1,3 3/ 01,04
±100
pA
V
CM
= 0 V
02,03
±200
T
J
= +125°C,
V
CM
= 0 V
2 All
±10
nA
M,D,P,L,R, V
CM
= 0 V
1 01,04
±6
Large signal voltage gain
A
VO
V
O
= ±10 V, R
L
≥ 2 kΩ
4 01,04 150 V/mV
02,03 750
5,6 All 30
M,D,P,L,R
V
O
= ±10 V, R
L
= 2 kΩ
4 01,04 10
Output voltage swing 4/
V
O
R
L
≥ 2 kΩ
4 All
±11
V
R
L
≥ 10 kΩ
5,6
±12
Supply current
I
S
V
O
= 0 V, T
A
= +25°C
1 All 8.5 mA
M,D,P,L,R, V
O
= 0 V
1 01,04 8.5
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
SIZE
A
5962-88538
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
REVISION LEVEL
H
SHEET
6
DSCC FORM 2234
APR 97
TABLE I. Electrical performance characteristics – Continued.
Test
Symbol
Conditions 1/ 2/
-55°C ≤ T
A
≤ +125°C
V
S
= ±15 V
Group A
subgroups
Device
type
Limits
Unit
unless otherwise specified Min Max
Slew rate 4/
SR
A
VCL
= +1, R
L
≥ 2 kΩ,
4 01,04 10.0
V/µs
C
L
= 100 pF
5,6 7.5
4 02,03 7.5
5,6 5.0
Settling time 4/ 5/
t
S
To 0.01 %, T
A
= +25°C
9 All 3.0
µs
To 0.05 %, T
A
= +25°C
2.1
To 0.10 %, T
A
= +25°C
1.8
Common-mode 4/
rejection ratio
CMRR
V
CM
= IVR = ±10.2 V
1 All 86 dB
2,3 82
Power supply rejection 4/
ratio
PSRR
V
S
= ±10 V to ±16 V
1 01,04 51
µV/V
02,03 80
2,3 All 100
Input voltage range 4/ 6/
IVR 1,2,3 All
±10.2
V
Gain bandwidth 4/ 7/
product
A
BW
T
A
= +25°C
4 All 3.5 MHz
1/ RHA devices supplied to this drawing have been characterized through all levels M, D, P, L, and R of irradiation.
However, this device is only tested at the “R” level. Pre and Post irradiation values are identical unless otherwise specified
in Table I. When performing post irradiation electrical measurements for any RHA level, T
A
= +25°C.
2/ These parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects.
Radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883,
method 1019, condition A.
3/ T
A
= -55°C for I
IO
and I
IB
tests, subgroup 3, is guaranteed by T
A
= +25°C test.
4/ This parameter not tested post radiation.
5/ Settling time is defined here for a unity gain inverter connection using 2 kΩ resistors. It is the time required for the error
voltage (the voltage at the inverting input pin on the amplifier) to settle to within a specified percent of its final value from
the time a 10 V step input is applied to the inverter.
6/ IVR test is defined as the V
CM
range used for the CMRR test.
7/ Parameter guaranteed if not tested to the limits specified.
P1-P3P4-P6P7-P9P10-P12P13-P13

5962-8853801PA

Mfr. #:
Buy 5962-8853801PA
Manufacturer:
Analog Devices Inc.
Description:
Operational Amplifiers - Op Amps DUAL PREC JFET-INPUT IC
Lifecycle:
New from this manufacturer.
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