IXFX44N80P Datasheet IXFK44N80P, IXFX44N80P | P1-P3

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25°C to 150°C 800 V

V

DGR

T

J

= 25°C to 150°C; R

GS

= 1 MΩ 800 V

V

GS

Continuous ± 30 V

V

GSM

Transient ± 40 V

I

D25

T

C

= 25°C44A

I

DM

T

C

= 25°C, pulse width limited by T

JM

100 A

I

AR

T

C

= 25°C22A

E

AR

T

C

= 25°C80mJ

E

AS

T

C

= 25°C 3.4 J

dv/dt I

S

≤ I

DM

, di/dt ≤ 100 A/μs, V

DD

≤ V

DSS

, 10 V/ns

T

J

≤ 150°C, R

G

= 10 Ω

P

D

T

C

= 25°C 1040 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

T

L

1.6 mm (0.062 in.) from case for 10 s 300 ° C

T

SOLD

Plastic body for 10 s 260 ° C

M

d

Mounting torque (IXFK) 1.13.10 Nm/lb.in.

F

C

Mounting force (IXFX) 20..120 /4.5..25 N/lb

Weight (IXFK) 10 g

(IXFX) 5 g

G = Gate D = Drain

S = Source TAB = Drain

Symbol Test Conditions Characteristic Values

(T

J

= 25°C unless otherwise specified) Min. Typ. Max.

BV

DSS

V

GS

= 0 V, I

D

= 800 μA 800 V

V

GS(th)

V

DS

= V

GS

, I

D

= 8 mA 3.0 5.0 V

I

GSS

V

GS

= ± 30 V

DC

, V

DS

= 0 ± 200 nA

I

DSS

V

DS

= V

DSS

50 μA

V

GS

= 0 V T

J

= 125°C 1.5 mA

R

DS(on)

V

GS

= 10 V, I

D

= 0.5 I

D25

, Note 1 190 mΩ

PolarHV

TM

HiPerFET

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

Features

z

Fast intrinsic diode

z

International standard packages

z

Unclamped Inductive Switching (UIS)

rated

z

Low package inductance

- easy to drive and to protect

Advantages

z

Easy to mount

z

Space savings

z

High power density

IXFK 44N80P

IXFX 44N80P

V

DSS

= 800 V

I

D25

=44 A

R

DS(on)

≤≤

≤

190 m

ΩΩ

Ω

t

rr

≤≤

≤

250 ns

DS99478E(01/06)

PLUS247 (IXFX)

S

G

D

TO-264 (IXFK)

(TAB)

IXYS reserves the right to change limits, test conditions, and dimensions.

IXFK 44N80P

IXFX 44N80P

Symbol Test Conditions Characteristic Values

(T

J

= 25°C unless otherwise specified)

Min. Typ. Max.

g

fs

V

DS

= 20 V; I

D

= 0.5 I

D25

, Note 1 27 43 S

C

iss

12 nF

C

oss

V

GS

= 0 V, V

DS

= 25 V, f = 1 MHz 910 pF

C

rss

30 pF

t

d(on)

28 ns

t

r

V

GS

= 10 V, V

DS

= 0.5 V

DSS

, I

D

= I

D25

22 ns

t

d(off)

R

G

= 1 Ω (External) 75 ns

t

f

27 ns

Q

g(on)

198 nC

Q

gs

V

GS

= 10 V, V

DS

= 0.5 V

DSS

, I

D

= 0.5 I

D25

67 nC

Q

gd

65 nC

R

thJC

0.12°C/W

R

thCS

0.15 °C/W

Source-Drain Diode Characteristic Values

T

J

= 25°C unless otherwise specified)

Symbol Test Conditions Min. Typ. Max.

I

S

V

GS

= 0 V 44 A

I

SM

Repetitive 100 A

V

SD

I

F

= I

S

, V

GS

= 0 V, Note 1 1.5 V

t

rr

I

F

= 22 A, -di/dt = 100 A/μs 250 ns

Q

RM

V

R

= 100 V, V

GS

= 0 V 0.8 μC

I

RM

8.0 A

Note 1: Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %

Terminals: 1 - Gate

2 - Drain (Collector)

3 - Source (Emitter)

4 - Drain (Collector)

PLUS 247

TM

(IXFX) Outline

TO-264 (IXFK) Outline

Millimeter Inches

Min. Max. Min. Max.

A 4.82 5.13 .190 .202

A1 2.54 2.89 .100 .114

A2 2.00 2.10 .079 .083

b 1.12 1.42 .044 .056

b1 2.39 2.69 .094 .106

b2 2.90 3.09 .114 .122

c 0.53 0.83 .021 .033

D 25.91 26.16 1.020 1.030

E 19.81 19.96 .780 .786

e 5.46 BSC .215 BSC

J 0.00 0.25 .000 .010

K 0.00 0.25 .000 .010

L 20.32 20.83 .800 .820

L1 2.29 2.59 .090 .102

P 3.17 3.66 .125 .144

Q 6.07 6.27 .239 .247

Q1 8.38 8.69 .330 .342

R 3.81 4.32 .150 .170

R1 1.78 2.29 .070 .090

S 6.04 6.30 .238 .248

T 1.57 1.83 .062 .072

Dim.

IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585

one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.83 5.21 .190 .205

A

1

2.29 2.54 .090 .100

A

2

1.91 2.16 .075 .085

b 1.14 1.40 .045 .055

b

1

1.91 2.13 .075 .084

b

2

2.92 3.12 .115 .123

C 0.61 0.80 .024 .031

D 20.80 21.34 .819 .840

E 15.75 16.13 .620 .635

e 5.45 BSC .215 BSC

L 19.81 20.32 .780 .800

L1 3.81 4.32 .150 .170

Q 5.59 6.20 .220 0.244

R 4.32 4.83 .170 .190

Fig. 2. Extended Output Characteristics

@ 25

°

C

0

10

20

30

40

50

60

70

80

90

100

0 3 6 9 12 15 18 21 24 27 30

V

D S

- Volts

I

D

- Amperes

V

GS

= 10V

7V

6V

5V

Fig. 3. Output Characteristics

@ 125

°

C

0

5

10

15

20

25

30

35

40

45

0 2 4 6 8 10 12 14 16

V

D S

- Volts

I

D

- Amperes

V

GS

= 10V

7V

5V

6V

Fig. 1. Output Characteristics

@ 25

°

C

0

5

10

15

20

25

30

35

40

45

012345678

V

D S

- Volts

I

D

- Amperes

V

GS

= 10V

7V

5V

6V

Fig. 4. R

DS(on

)

Normalized to 0.5 I

D25

Value vs. Junction Temperature

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

D S ( o n )

- Normalize

d

I

D

= 44A

I

D

= 22A

V

GS

= 10V

Fig. 6. Drain Current vs. Case

Temperature

0

5

10

15

20

25

30

35

40

45

50

-50 -25 0 25 50 75 100 125 150

T

C

- Degrees Centigrade

I

D

- Amperes

Fig. 5. R

DS(on)

Normalized to 0.5 I

D25

Value vs. Drain Current

0.8

1

1.2

1.4

1.6

1.8

2

2.2

2.4

0 102030405060708090100

I

D

- Amperes

R

D S ( o n )

- Normalize

d

T

J

= 25

°

C

V

GS

= 10V

T

J

= 125

°

C

IXFK 44N80P

IXFX 44N80P

IXFX44N80P

IXFX44N80P

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