Electrical Specifications
Stresses greater than those listed may cause permanent damage to the module. This is a
stress rating only, and functional operation of the module at these or any other condi-
tions outside those indicated in each device's data sheet is not implied. Exposure to ab-
solute maximum rating conditions for extended periods may adversely affect reliability.
Table 9: Absolute Maximum Ratings
Symbol Parameter Min Max Units
V
DD
V
DD
supply voltage relative to V
SS
–0.4 1.975 V
V
IN
, V
OUT
Voltage on any pin relative to V
SS
–0.4 1.975 V
Table 10: Operating Conditions
Symbol Parameter Min Nom Max Units Notes
V
DD
V
DD
supply voltage 1.283 1.35 1.45 V
1.425 1.5 1.575 V 1
V
REFCA(DC)
Input reference voltage command/address
bus
0.49 × V
DD
0.5 ×
V
DD
0.51 × V
DD
V
V
REFDQ(DC)
I/O reference voltage DQ bus 0.49 × V
DD
0.5 ×
V
DD
0.51 × V
DD
V
I
VTT
Termination reference current from V
TT
–600 600 mA
V
TT
Termination reference voltage (DC) – com-
mand/address bus
0.49 × V
DD
-
20mV
0.5 ×
V
DD
0.51 × V
DD
+
20mV
V 2
I
I
Input leakage current; Any
input 0V V
IN
V
DD
; V
REF
input 0V V
IN
0.95V (All
other pins not under test =
0V)
Address in-
puts, RAS#,
CAS#, WE#,
BA
–32 0 32 µA
S#, CKE,
ODT, CK,
CK#
–16 0 16
DM –4 0 4
I
OZ
Output leakage current; 0V
V
OUT
V
DD
; DQ and ODT
are disabled; ODT is HIGH
DQ, DQS,
DQS#
–10 0 10 µA
I
VREF
V
REF
supply leakage current;
V
REFDQ
= V
DD/2
or V
REFCA
= V
DD/2
(All other pins not under test = 0V)
–16 0 16 µA
T
A
Module ambient operating temperature 0 70 °C 3
T
C
DDR3 SDRAM component case operating
temperature
0 95 °C 3, 4, 5
Notes:
1. Module is backward-compatible with 1.5V operation. Refer to device specification for
details and operation guidance.
2. V
TT
termination voltage in excess of the stated limit will adversely affect the command
and address signals’ voltage margin and will reduce timing margins.
3. T
A
and T
C
are simultaneous requirements.
2GB, 4GB (x64, DR) 204-Pin 1.35V DDR3 SODIMM
Electrical Specifications
PDF: 09005aef83b11a03
ksf16c256_512x64hz – Rev. D 4/13 EN
10
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
4. For further information, refer to technical note TN-00-08: “Thermal Applications,”
available on Micron’s Web site.
5. The refresh rate is required to double when 85°C < T
C
95°C.
2GB, 4GB (x64, DR) 204-Pin 1.35V DDR3 SODIMM
Electrical Specifications
PDF: 09005aef83b11a03
ksf16c256_512x64hz – Rev. D 4/13 EN
11
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
DRAM Operating Conditions
Recommended AC operating conditions are given in the DDR3 component data sheets.
Component specifications are available on Micron’s web site. Module speed grades cor-
relate with component speed grades, as shown below.
Table 11: Module and Component Speed Grades
DDR3 components may exceed the listed module speed grades; module may not be available in all listed speed grades
Module Speed Grade Component Speed Grade
-2G1 -093
-1G9 -107
-1G6 -125
-1G4 -15E
-1G1 -187E
-1G0 -187
-80C -25E
-80B -25
Design Considerations
Simulations
Micron memory modules are designed to optimize signal integrity through carefully de-
signed terminations, controlled board impedances, routing topologies, trace length
matching, and decoupling. However, good signal integrity starts at the system level.
Micron encourages designers to simulate the signal characteristics of the system's
memory bus to ensure adequate signal integrity of the entire memory system.
Power
Operating voltages are specified at the DRAM, not at the edge connector of the module.
Designers must account for any system voltage drops at anticipated power levels to en-
sure the required supply voltage is maintained.
2GB, 4GB (x64, DR) 204-Pin 1.35V DDR3 SODIMM
DRAM Operating Conditions
PDF: 09005aef83b11a03
ksf16c256_512x64hz – Rev. D 4/13 EN
12
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.

MT16KSF51264HZ-1G4D1

Mfr. #:
Manufacturer:
Micron
Description:
MODULE DDR3 SDRAM 4GB 204SODIMM
Lifecycle:
New from this manufacturer.
Delivery:
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