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MT16KSF51264HZ-1G4D1

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P19
I
DD
Specifications
Table 12: DDR3 I
DD
Specifications and Conditions – 2GB (Die Revision F)
Values are for the MT41K128M8 DDR3 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) com-
ponent data sheet
Parameter Symbol 1600 1333 1066 Units
Operating current 0: One bank ACTIVATE-to-PRE-
CHARGE
I
DD0
1
TBD 840 744 mA
Operating current 1: One bank ACTIVATE-to-READ-
to-PRECHARGE
I
DD1
1
TBD 960 864 mA
Precharge power-down current: Slow exit I
DD2P0
2
TBD 160 128 mA
Precharge power-down current: Fast exit I
DD2P1
2
TBD 480 400 mA
Precharge quiet standby current I
DD2Q
2
TBD 880 720 mA
Precharge standby current I
DD2N
2
TBD 880 720 mA
Precharge standby ODT current I
DD2NT
1
TBD 680 584 mA
Active power-down current I
DD3P
2
TBD 592 480 mA
Active standby current I
DD3N
2
TBD 960 800 mA
Burst read operating current I
DD4R
1
TBD 1240 1024 mA
Burst write operating current I
DD4W
1
TBD 1240 1024 mA
Refresh current I
DD5B
2
TBD 1540 1464 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
2
TBD 96 96 mA
Self refresh temperature current (SRT-enabled): MAX
T
C
= 95°C
I
DD6ET
2
TBD 144 144 mA
All banks interleaved read current I
DD7
1
TBD 2960 2384 mA
Reset current I
DD8
2
TBD 192 160 mA
Notes:
1. One module rank in the active I
DD
, the other rank in I
DD2P0
.
2. All ranks in this I
DD
condition.
Table 13: DDR3 I
DD
Specifications and Conditions – 2GB (Die Revision G)
Values are for the MT41K128M8 DDR3 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) com-
ponent data sheet
Parameter Symbol 1600 1333 1066 Units
Operating current 0: One bank ACTIVATE-to-PRE-
CHARGE
I
DD0
1
696 656 616 mA
Operating current 1: One bank ACTIVATE-to-READ-
to-PRECHARGE
I
DD1
1
816 776 736 mA
Precharge power-down current: Slow exit I
DD2P0
2
192 192 192 mA
Precharge power-down current: Fast exit I
DD2P1
2
560 480 400 mA
Precharge quiet standby current I
DD2Q
2
720 720 640 mA
Precharge standby current I
DD2N
2
720 720 640 mA
Precharge standby ODT current I
DD2NT
1
536 496 496 mA
Active power-down current I
DD3P
2
560 560 480 mA
2GB, 4GB (x64, DR) 204-Pin 1.35V DDR3 SODIMM
I
DD
Specifications
PDF: 09005aef83b11a03
ksf16c256_512x64hz – Rev. D 4/13 EN
13
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
Table 13: DDR3 I
DD
Specifications and Conditions – 2GB (Die Revision G) (Continued)
Values are for the MT41K128M8 DDR3 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) com-
ponent data sheet
Parameter Symbol 1600 1333 1066 Units
Active standby current I
DD3N
2
720 720 640 mA
Burst read operating current I
DD4R
1
1256 1136 976 mA
Burst write operating current I
DD4W
1
1296 1176 1016 mA
Refresh current I
DD5B
2
1496 1456 1416 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
2
128 128 128 mA
Self refresh temperature current (SRT-enabled): MAX
T
C
= 95°C
I
DD6ET
2
160 160 160 mA
All banks interleaved read current I
DD7
1
2096 2056 1696 mA
Reset current I
DD8
2
224 224 224 mA
Notes:
1. One module rank in the active I
DD
, the other rank in I
DD2P0
.
2. All ranks in this I
DD
condition.
Table 14: DDR3 I
DD
Specifications and Conditions – 4GB (Die Revision D)
Values are for the MT41K256M8 DDR3 SDRAM only and are computed from values specified in the 2Gb (256 Meg x 8) com-
ponent data sheet
Parameter Symbol 1600 1333 1066 Units
Operating current 0: One bank ACTIVATE-to-PRE-
CHARGE
I
DD0
1
TBD 776 696 mA
Operating current 1: One bank ACTIVATE-to-READ-
to-PRECHARGE
I
DD1
1
TBD 896 856 mA
Precharge power-down current: Slow exit I
DD2P0
2
TBD 192 192 mA
Precharge power-down current: Fast exit I
DD2P1
2
TBD 480 400 mA
Precharge quiet standby current I
DD2Q
2
TBD 560 480 mA
Precharge standby current I
DD2N
2
TBD 592 512 mA
Precharge standby ODT current I
DD2NT
1
TBD 456 416 mA
Active power-down current I
DD3P
2
TBD 560 480 mA
Active standby current I
DD3N
2
TBD 640 560 mA
Burst read operating current I
DD4R
1
TBD 1376 1216 mA
Burst write operating current I
DD4W
1
TBD 1416 1256 mA
Refresh current I
DD5B
2
TBD 1696 1616 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
2
TBD 192 192 mA
Self refresh temperature current (SRT-enabled): MAX
T
C
= 95°C
I
DD6ET
2
TBD 240 240 mA
All banks interleaved read current I
DD7
1
TBD 3176 2776 mA
Reset current I
DD8
2
TBD 224 224 mA
Notes:
1. One module rank in the active I
DD
, the other rank in I
DD2P0
.
2. All ranks in this I
DD
condition.
2GB, 4GB (x64, DR) 204-Pin 1.35V DDR3 SODIMM
I
DD
Specifications
PDF: 09005aef83b11a03
ksf16c256_512x64hz – Rev. D 4/13 EN
14
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
Table 15: DDR3 I
DD
Specifications and Conditions – 4GB (Die Revision H)
Values are for the MT41K256M8 DDR3 SDRAM only and are computed from values specified in the 2Gb (256 Meg x 8) com-
ponent data sheet
Parameter Symbol 1600 1333 1066 Units
Operating current 0: One bank ACTIVATE-to-PRE-
CHARGE
I
DD0
1
696 656 616 mA
Operating current 1: One bank ACTIVATE-to-READ-
to-PRECHARGE
I
DD1
1
856 816 776 mA
Precharge power-down current: Slow exit I
DD2P0
2
192 192 192 mA
Precharge power-down current: Fast exit I
DD2P1
2
592 512 432 mA
Precharge quiet standby current I
DD2Q
2
672 592 512 mA
Precharge standby current I
DD2N
2
688 608 544 mA
Precharge standby ODT current I
DD2NT
1
512 472 432 mA
Active power-down current I
DD3P
2
752 672 592 mA
Active standby current I
DD3N
2
832 752 672 mA
Burst read operating current I
DD4R
1
1336 1216 1096 mA
Burst write operating current I
DD4W
1
1336 1216 1096 mA
Refresh current I
DD5B
1
1616 1576 1536 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
2
192 192 192 mA
Self refresh temperature current (SRT-enabled): MAX
T
C
= 95°C
I
DD6ET
2
240 240 240 mA
All banks interleaved read current I
DD7
1
2136 2016 1896 mA
Reset current I
DD8
2
224 224 224 mA
Notes:
1. One module rank in the active I
DD
, the other rank in I
DD2P0
.
2. All ranks in this I
DD
condition.
Table 16: DDR3 I
DD
Specifications and Conditions – 4GB (Die Revision M)
Values are for the MT41K256M8 DDR3 SDRAM only and are computed from values specified in the 2Gb (256 Meg x 8) com-
ponent data sheet
Parameter Symbol 1600 1333 1066 Units
Operating current 0: One bank ACTIVATE-to-PRE-
CHARGE
I
DD0
1
576 536 496 mA
Operating current 1: One bank ACTIVATE-to-READ-
to-PRECHARGE
I
DD1
1
696 656 616 mA
Precharge power-down current: Slow exit I
DD2P0
2
192 192 192 mA
Precharge power-down current: Fast exit I
DD2P1
2
528 448 368 mA
Precharge quiet standby current I
DD2Q
2
528 448 368 mA
Precharge standby current I
DD2N
2
560 480 400 mA
Precharge standby ODT current I
DD2NT
1
416 376 336 mA
Active power-down current I
DD3P
2
752 672 592 mA
Active standby current I
DD3N
2
832 752 672 mA
Burst read operating current I
DD4R
1
1216 1096 976 mA
2GB, 4GB (x64, DR) 204-Pin 1.35V DDR3 SODIMM
I
DD
Specifications
PDF: 09005aef83b11a03
ksf16c256_512x64hz – Rev. D 4/13 EN
15
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P19

MT16KSF51264HZ-1G4D1

Mfr. #:
Buy MT16KSF51264HZ-1G4D1
Manufacturer:
Micron
Description:
MODULE DDR3 SDRAM 4GB 204SODIMM
Lifecycle:
New from this manufacturer.
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