ADL5590ACPZ-R7

869 MHz to 1990 MHz
Quadrature Modulators
Data Sheet
ADL5590/ADL5591
Rev. A Document Feedback
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FEATURES
Operating frequencies
ADL5590: 869 MHz to 960 MHz
ADL5591: 1805 MHz to 1990 MHz
Output compression point P1dB: 16 dBm
Output third-order intercept point OIP3
ADL5590: 29 dBm at 900 MHz
ADL5591: 30 dBm at 1900 MHz
Noise floor: −157 dBm/Hz
Sideband suppression
ADL5590: <−50 dBc at 900 MHz
ADL5591: <−47 dBc at 1900 MHz
Baseband common-mode bias: 1.5 V
LO leakage
ADL5590: −50 dBc at 900 MHz, P
OUT
= 5 dBm
ADL5591: −44 dBc at 1900 MHz, P
OUT
= 5 dBm
Single supply: 4.75 V to 5.25 V
Package: 36-lead, 6 mm × 6 mm LFCSP
APPLICATIONS
Wireless infrastructure
Optimized for GSM transmitters
FUNCTIONAL BLOCK DIAGRAM
ADL5590/
ADL5591
24
25
26
23
22
21
1
2
3
9
20
27
19
GND
QBBN
QBBP
VOUT
GND
IBBN
IBBP
GND
GND
4
5
6
7
8
GND
GND
V
PS1
GND
LOIP
GND
LOIN
GND
GND
1
0
1
1
1
2
1
3
1
4
1
5
1
6
1
7
1
8
G
N
D
G
N
D
G
N
D
V
P
S
2
G
N
D
V
P
S
3
G
N
D
G
N
D
G
N
D
3
3
3
4
3
5
3
6
3
2
3
1
3
0
2
9
2
8
V
P
S
5
G
N
D
G
N
D
G
N
D
G
N
D
V
P
S
4
G
N
D
G
N
D
G
N
D
06661-001
QUADRATURE
PHASE
SPLITTER
Figure 1.
GENERAL DESCRIPTION
This family of monolithic RF quadrature modulators is
designed for use from 869 MHz to 960 MHz and from
1805 MHz to 1990 MHz. Excellent phase accuracy and
amplitude balance enable high performance, direct RF
modulation for communications systems.
The ADL5590 and ADL5591 can be used as direct RF
modulators in digital communications systems such as those
using the Global System for Mobile Communications (GSM)
network. In addition, the devices are compatible with enhanced
data rates for GSM evolution (EDGE).
This family is fabricated using an advanced silicon-germanium
bipolar process from Analog Devices, Inc., and is available in a
36-lead, exposed pad LFCSP. The devices operate from −40°C
to +85°C.
ADL5590/ADL5591 Data Sheet
Rev. A | Page 2 of 8
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications ....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description ......................................................................... 1
Revision History ............................................................................... 2
Specifications ..................................................................................... 3
Absolute Maximum Ratings ............................................................5
ESD Caution...................................................................................5
Pin Configuration and Function Descriptions ..............................6
Basic Connections .............................................................................7
Outline Dimensions ..........................................................................8
Ordering Guide .............................................................................8
REVISION HISTORY
4/16—Rev. 0 to Rev. A
Changes to Figure 1 .......................................................................... 1
Changes to Figure 2 .......................................................................... 6
Changes to Figure 3 .......................................................................... 7
Updated Outline Dimensions ......................................................... 8
Changes to Ordering Guide ............................................................ 8
5/07—Revision 0: Initial Version
Data Sheet ADL5590/ADL5591
Rev. A | Page 3 of 8
SPECIFICATIONS
V
S
= 5 V; T
A
= 25°C; LO = 2 dBm; baseband I/Q amplitude = 1 V p-p differential sine waves in quadrature with a 1.5 V dc bias; baseband
I/Q frequency (f
BB
) = 1 MHz, unless otherwise noted.
Table 1.
Parameter Test Conditions/Comments Min Typ Max Unit
Operating Frequency Range
ADL5590 869 960 MHz
1805 1990 MHz
ADL5590 @ f
RF
= 880 MHz
Output Power V
IQ
= 1.0 V p-p differential 3.75 5.9 8.0 dBm
vs. Frequency f
RF
= 869 MHz to 894 MHz
0.1
dB
vs. Temperature 0°C to 85°C 0.01 dB/°C
−25°C to 0°C 0.01 dB/°C
Sideband Suppression −50 dBc
LO Leakage −50 dBc
Output Return Loss 2.8 dB
Output P1 dB 16 dBm
Output IP3 f1
BB
= 3.5 MHz, f2
BB
= 4.5 MHz, P
OUT
= 0 dBm per tone 29 dBm
Output IP2 f1
BB
= 3.5 MHz, f2
BB
= 4.5 MHz, P
OUT
= 0 dBm per tone 66 dBm
Output Noise Density P
OUT
= 5 dBm, 6 MHz carrier offset −155 dBc/Hz
Output Noise Floor Baseband inputs biased to 1.5 V −156.6 dBm/Hz
Modulation Spectrum Relative to carrier in 30 kHz, P
OUT
= 3 dBm, 8 PSK
250 kHz carrier offset −42.5 dBc
400 kHz carrier offset −71.1 dBc
600 kHz carrier offset −78.5 dBc
1.2 MHz carrier offset −79.1 dBc
RMS Error Vector Magnitude P
OUT
= 3 dBm, 8 PSK 0.5 %
Peak Error Vector Magnitude P
OUT
= 3 dBm, 8 PSK 1.5 %
ADL5590 @ f
RF
= 940 MHz
Output Power V
IQ
= 1.0 V p-p differential 3.5 5.7 7.75 dBm
vs. Frequency f
RF
= 925 MHz to 960 MHz
0.1
dB
vs. Temperature 0°C to 85°C 0.01 dB/°C
−25°C to 0°C 0.01 dB/°C
Sideband Suppression −50 dBc
LO Leakage −50 dBc
Output Return Loss 3.2 dB
Output P1 dB 16 dBm
Output IP3 f1
BB
= 3.5 MHz, f2
BB
= 4.5 MHz, P
OUT
= 0 dBm per tone 29 dBm
Output IP2 f1
BB
= 3.5 MHz, f2
BB
= 4.5 MHz, P
OUT
= 0 dBm per tone 70 dBm
Output Noise Floor Baseband inputs biased to 1.5 V −156.6 dBm/Hz
Modulation Spectrum Relative to carrier in 30 kHz, P
OUT
= 3 dBm, 8 PSK
250 kHz carrier offset −42.5 dBc
400 kHz carrier offset −71.1 dBc
600 kHz carrier offset −78.5 dBc
1.2 MHz carrier offset −79.1 dBc
RMS Error Vector Magnitude P
OUT
= 3 dBm, 8 PSK 0.4 %
Peak Error Vector Magnitude P
OUT
= 3 dBm, 8 PSK 1.4 %
ADL5591 @ f
RF
= 1850 MHz f
RF
= 1850 MHz
Output Power V
IQ
= 1.0 V p-p differential 3.0 5.0 7.0 dBm
vs. Frequency f
RF
= 1805 MHz to 1880 MHz
0.1
dB
vs. Temperature 0°C to 85°C 0.011 dB/°C
−25°C to 0°C 0.011 dB/°C
Sideband Suppression −47 dBc

ADL5590ACPZ-R7

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
Modulator / Demodulator EMOD GSM ASIC FOR ERICSSON 1800-1990 MHZ
Lifecycle:
New from this manufacturer.
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