SiZ916DT
www.vishay.com
Vishay Siliconix
S15-1672-Rev. B, 20-Jul-15
10
Document Number: 62721
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CHANNEL-2 TYPICAL CHARACTERISTICS (T
J
= 25 °C, unless otherwise noted)
Current Derating* Power, Junction-to-Case
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J
(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
0
70
140
210
0 25 50 75 100 125 150
I
D
- Drain Current (A)
T
C
- Case Temperature (°C)
0
30
60
90
120
0 25 50 75 100 125 150
Power (W)
T
C
- Case Temperature (°C)
0.0
0.7
1.4
2.1
2.8
0 25 50 75 100 125 150
Power (W)
T
A
- Ambient Temperature (°C)
SiZ916DT
www.vishay.com
Vishay Siliconix
S15-1672-Rev. B, 20-Jul-15
11
Document Number: 62721
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CHANNEL-2 TYPICAL CHARACTERISTICS (T
J
= 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62721.
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
Normalized Effective Transient
Thermal Impedance
Square Wave Pulse Duration (s)
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base=R
thJA
=55 °C/W
3. T
JM
-T
A
=P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
0.1
1
0.0001 0.001 0.01 0.1
Normalized Effective Transient
Thermal Impedance
Square Wave Pulse Duration (s)
Duty Cycle = 0.5
0.2
0.1
Single Pulse
0.05
0.02
Package Information
www.vishay.com
Vishay Siliconix
Revision: 22-Dec-14
1
Document Number: 63656
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PowerPAIR
®
6 x 5 Case Outline
MILLIMETERS INCHES
DIM. MIN. NOM. MAX. MIN. NOM. MAX.
A 0.70 0.75 0.80 0.028 0.030 0.032
A1 0.00 - 0.10 0.000 - 0.004
A3 0.15 0.20 0.25 0.006 0.007 0.009
b 0.43 0.51 0.61 0.017 0.020 0.024
b1 0.25 BSC 0.010 BSC
D 4.90 5.00 5.10 0.192 0.196 0.200
D1 3.75 3.80 3.85 0.148 0.150 0.152
E 5.90 6.00 6.10 0.232 0.236 0.240
E1 Option AA (for W/B) 2.62 2.67 2.72 0.103 0.105 0.107
E1 Option AB (for BWL) 2.42 2.47 2.52 0.095 0.097 0.099
E2 0.87 0.92 0.97 0.034 0.036 0.038
e 1.27 BSC 0.050 BSC
K Option AA (for W/B) 0.45 typ. 0.018 typ.
K Option AB (for BWL) 0.65 typ. 0.025 typ.
K1 0.66 typ. 0.025 typ.
L 0.33 0.43 0.53 0.013 0.017 0.020
L3 0.23 BSC 0.009 BSC
z 0.34 BSC 0.013 BSC
ECN: T14-0782-Rev. C, 22-Dec-14
DWG: 6005
A1
b1
F
F
E
Pin 1
Pin 2
Pin 3 Pin 4
Pin 8 Pin 7 Pin 6 Pin 5
A
E2
e
E1 K
z
L
D1
b
K1
Back side view
0.10 C
D1
D
A
0.08 C
Pin # 1 ident
(optional)
0.10 C
2X
C
A3
L3
Top side view
0.10 C
2X
Pin 8Pin 7
Pin 6
Pin 5
Pin 1
Pin 2
Pin 3
Pin 4

SIZ916DT-T1-GE3

Mfr. #:
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 78-SIZ980DT-T1-GE3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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