SiZ916DT
www.vishay.com
Vishay Siliconix
S15-1672-Rev. B, 20-Jul-15
8
Document Number: 62721
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CHANNEL-2 TYPICAL CHARACTERISTICS (T
J
= 25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
25
50
75
100
0 0.5 1 1.5 2
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
V
GS
= 10 V thru 4 V
V
GS
= 3V
0.0005
0.0010
0.0015
0.0020
0.0025
0 20 40 60 80 100
R
DS(on)
- On-Resistance (Ω)
I
D
- Drain Current (A)
V
= 4.5 V
V
GS
= 10 V
0
2
4
6
8
10
0 22 44 66 88 110
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
DS
= 24 V
V
DS
= 8 V
V
DS
= 15 V
I
D
= 20 A
0
1
2
3
4
5
0.60 1.2 1.8 2.4 3
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= 25 °C
T
0
2200
4400
6600
8800
0 6 12 18 24 30
C - Capacitance (pF)
V
DS
- Drain-to-Source Voltage (V)
C
C
C
0.7
0.95
1.2
1.45
1.7
- 50 - 25 0 25 50 75 100 125 150
R
DS(on)
- On-Resistance (Normalized)
T
J
- Junction Temperature (°C)
I
= 20A
V
= 10 V
V
GS
= 4.5 V
