© 2008 Microchip Technology Inc. DS22083A-page 1
MCP14628
Features
Dual Output MOSFET Driver for Synchronous
Applications
High Peak Output Current: 2A (typical)
Adaptive Cross Conduction Protection
Internal Bootstrap Blocking Device
+36V BOOT Pin Maximum Rating
Enhanced Light Load Efficiency Mode
Low Supply Current: 80 µA (typical)
High Capacitive Load Drive Capability:
- 3300 pF in 10 ns (typical)
Tri-State PWM Pin for Power Stage Shutdown
Input Voltage Undervoltage Lockout Protection
Space Saving Packages:
- 8-Lead SOIC
- 8-Lead 3x3 DFN
Applications
High Efficient Synchronous DC/DC Buck
Converters
High Current Low Output Voltage Synchronous
DC/DC Buck Converters
High Input Voltage Synchronous DC/DC Buck
Converters
Core Voltage Supplies for Microprocessors
General Description
The MCP14628 is a dual MOSFET gate driver
designed to optimally drive two N-Channel MOSFETs
arranged in a non-isolated synchronous buck converter
topology. With the capability to source 2A peaks
typically from both the high-side and low-side drives,
the MCP14628 is an ideal companion to buck control-
lers that lack integrated gate drivers. Additionally,
greater design flexibility is offered by allowing the gate
drivers to be placed close to the power MOSFETs.
The MCP14628 features the capability to sink 3.5A
peak typically for the low-side gate drive. This allows
the MCP14628 the capability of holding off the low-side
power MOSFET during the rising edge of the PHASE
node. Internal adaptive cross conduction protection
circuitry is also used to mitigate both external power
MOSFETs from simultaneously conducting.
The low resistance pull-up and pull-down drives allow
the MCP14628 to quickly transition a 3300 pF load in
typically 10 ns and with a propagation time of typically
20 ns. Bootstrapping for the high-side drive is internally
implemented which allows for a reduced system cost
and design complexity.
The PWM input to the MCP14628 can be tri-stated to
force both drive outputs low for true power stage
shutdown. Light load system efficiency is improved by
using the diode emulation feature of the MCP14628.
When the FCCM pin is grounded, diode emulation
mode is entered. In this mode, discontinuous conduc-
tion is allowed by sensing when the inductor current
reach zero and turning off the low-side power
MOSFET.
Package Types
1
2
3
4
8
7
6
5
HIGHDR
BOOT
PWM
GND
LOWDR
V
CC
FCCM
PHASE
8-Lead SOIC
1
2
3
4
8
7
6
5
HIGHDR
BOOT
PWM
GND
LOWDR
V
CC
FCCM
PHASE
8-Lead DFN
Note 1: Exposed pad on the DFN is electrically isolated.
2A Synchronous Buck Power MOSFET Driver
MCP14628
DS22083A-page 2 © 2008 Microchip Technology Inc.
Typical Application Schematic
Functional Block Diagram
UGATE
LGATE
PHASE
GND
BOOT
V
CC
FCCM
PWM
C
BOOT
FB
V
REF
COMP
GND
VEXT
V
CC
CS
OSC IN
MCP1630
MCP14628
REFERENCE VOLTAGE
V
SUPPLY
= 12V
V
CC
= 5V
OSCILLATOR
FROM MCU
CURRENT
SENSE
CURRENT
SENSE
Q
H
Q
L
FCCM
CONTROL
BOOT
HIGHDR
PHASE
LOWDR
V
CC
FCCM
PWM
GND
V
CC
R
R
Level
Shift
Control
Logic &
Protection
© 2008 Microchip Technology Inc. DS22083A-page 3
MCP14628
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
V
CC
, Device Supply Voltage.............................-0.3V to +7.0V
V
BOOT
, BOOT Voltage....................................-0.3V to +36.0V
V
PHASE
, Phase Voltage...........V
BOOT
- 7.0V to V
BOOT
+0.3V
V
FCCM
, FCCM Voltage........................... -0.3V to V
CC
+ .0.3V
V
PWM
, PWM Voltage............................... -0.3V to V
CC
+0.3V
V
UGATE
, UGATE Voltage....... V
PHASE
- 0.3V to V
BOOT
+0.3V
V
LGATE
, LGATE Voltage.......................... -0.3V to V
CC
+0.3V
ESD Protection on all Pins....................................2 kV (HBM)
Notice: Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational sections of this specification is not intended.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, V
CC
=5V, T
J
= -40°C to +125°C
Parameters Sym Min Typ Max Units Conditions
V
CC
Supply Requirements
Recommended Operating Range V
CC
4.5 5.0 5.5 V
Bias Supply Voltage I
VCC
80 µA PWM pin floating,
V
FCCM
=5V
UVLO (Rising V
CC
) 3.40 3.90 V
UVLO (Falling V
CC
)2.402.90V
Hysteresis 500 mV
PWM Input Requirements
PWM Input Current I
PWM
—250—µAV
PWM
=5V
-250 µA V
PWM
=0V
PWM Rising Threshold 0.70 1.00 1.30 V
PWM Falling Threshold 3.50 3.80 4.10 V
Tri-State Shutdown Hold-off Time t
TSSHD
100 175 250 ns T
A
= +25°C, Note 2
FCCM input Requirements
FCCM Low Threshold 0.50 V
FCCM High Threshold 2.0 V
Output Requirements
High Drive Source Resistance 1.0 2.5 Ω 500 mA source current,
Note 1
High Drive Sink Resistance 1.0 2.5 Ω 500 mA sink current,
Note 1
High Drive Source Current 2.0 A Note 1
High Drive Sink Current 2.0 A Note 1
Low Drive Source Resistance 1 2.5 Ω 500 mA source current,
Note 1
Low Drive Sink Resistance 0.5 1.0 Ω 500 mA sink current,
Note 1
Low Drive Source Current 2.0 A Note 1
Low Drive Sink Current 3.5 A Note 1
Note 1: Parameter ensured by design, not production tested.
2: See Figure 4-1 for parameter definition.

MCP14628T-E/SN

Mfr. #:
Manufacturer:
Microchip Technology
Description:
Gate Drivers 4A Hi-Side MOSFET Drvr
Lifecycle:
New from this manufacturer.
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