MCP14628
DS22083A-page 4 © 2008 Microchip Technology Inc.
TEMPERATURE CHARACTERISTICS
Switching Times
HIGHDR Rise Time t
RH
—10—nsC
L
=3.3nF,
Note 1, Note 2
LOWDR Rise Time t
RL
—10—nsC
L
=3.3nF,
Note 1, Note 2
HIGHDR Fall Time t
FH
—10—nsC
L
=3.3nF,
Note 1, Note 2
LOWDR Fall Time t
FL
—6.0—nsC
L
=3.3nF,
Note 1, Note 2
HIGHDR Turn-off Propagation
Delay
t
PDLH
15 ns No Load, Note 2
LOWDR Turn-off Propagation
Delay
t
PDLL
16 ns No Load, Note 2
HIGHDR Turn-on Propagation
Delay
t
PDHH
10 18 30 ns No Load, Note 2
LOWDR Turn-on Propagation
Delay
t
PDHL
10 22 30 ns No Load, Note 2
Tri-State Propagation Delay t
PTS
35 ns No Load, Note 2
Minimum LOWDR On Time in DCM t
LGMIN
400 ns FCCM pin low Note 1
Electrical Specifications: Unless otherwise noted, all parameters apply with V
CC
= 5V.
Parameter Sym Min Typ Max Units Comments
Temperature Ranges
Specified Temperature Range T
A
-40 +85 °C
Maximum Junction Temperature T
J
+150 °C
Storage Temperature T
A
-65 +150 °C
Package Thermal Resistances
Thermal Resistance, 8L-SOIC θ
JA
149.5 °C/W
Thermal Resistance, 8L-DFN (3x3) θ
JA
60.0 °C/W Typical Four-layer board
with vias to ground plane
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise noted, V
CC
=5V, T
J
= -40°C to +125°C
Parameters Sym Min Typ Max Units Conditions
Note 1: Parameter ensured by design, not production tested.
2: See Figure 4-1 for parameter definition.
© 2008 Microchip Technology Inc. DS22083A-page 5
MCP14628
2.0 TYPICAL PERFORMANCE CURVES
Note: Unless otherwise indicated, T
A
= +25°C with V
CC
= 5.0V.
FIGURE 2-1: Rise Times vs. Capacitive
Load.
FIGURE 2-2: HIGHDR Rise and Fall Time
vs. Temperature.
FIGURE 2-3: HIGHDR Propagation Delay
vs. Temperature.
FIGURE 2-4: Fall Times vs. Capacitive
Load.
FIGURE 2-5: LOWDR Rise and Fall Time
vs. Temperature.
FIGURE 2-6: LOWDR Propagation Delay
vs. Temperature.
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein are
not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
0
5
10
15
20
25
0 1500 3000 4500 6000 7500
Capacitive Load (pF)
Rise Time (ns)
t
RH
t
RL
6
7
8
9
10
11
12
13
14
-40 -25 -10 5 20 35 50 65 80 95 110 125
Temperature (°C)
Time (ns)
t
RH
t
FH
C
LOAD
= 3,300 pF
10
12
14
16
18
20
22
24
-40 -25 -10 5 20 35 50 65 80 95 110 125
Temperature (°C)
Propagation Delay (ns)
t
PDHH
t
PDLH
C
LOAD
= 3,300 pF
0
5
10
15
20
25
0 1500 3000 4500 6000 7500
Capacitive Load (pF)
Fall Time (ns)
t
FH
t
FL
4
5
6
7
8
9
10
11
12
-40 -25 -10 5 20 35 50 65 80 95 110 125
Temperature (°C)
Time (ns)
t
RL
t
FL
C
LOAD
= 3,300 pF
12
14
16
18
20
22
24
26
28
30
-40 -25 -10 5 20 35 50 65 80 95 110 125
Temperature (°C)
Time (ns)
t
PDHL
t
PDLL
C
LOAD
= 3,300 pF
MCP14628
DS22083A-page 6 © 2008 Microchip Technology Inc.
Typical Performance Curves (Continued)
Note: Unless otherwise indicated, T
A
= +25°C with V
CC
= 5.0V.
FIGURE 2-7: Supply Current vs.
Frequency.
FIGURE 2-8: DCM to CCM Transition
Operation.
FIGURE 2-9: Load Transition
(0.5A - 15A).
FIGURE 2-10: Supply Current vs.
Temperature.
FIGURE 2-11: CCM to DCM Transition
Operation.
FIGURE 2-12: Load Transition
(15A - 0.5A).
0
10
20
30
40
50
60
70
100 1000 10000
Frequency (kHz)
Supply Current (mA)
C
LOAD
= 3,300 pF
Duty Cycle = 30%
580
600
620
640
660
680
700
-40 -25 -10 5 20 35 50 65 80 95 110 125
Temperature (°C)
Supply Current (µA)
C
LOAD
= 3,300 pF
F
SW
= 12.5 kHz
Duty Cycle = 30%

MCP14628T-E/SN

Mfr. #:
Manufacturer:
Microchip Technology
Description:
Gate Drivers 4A Hi-Side MOSFET Drvr
Lifecycle:
New from this manufacturer.
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