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MUBW50-12E8

P1-P3P4-P6P7-P8
4 - 8© 2007 IXYS All rights reserved
20070912a
MUBW 50-12 E8
Temperature Sensor NTC
Symbol Conditions Characteristic Values
min. typ. max.
R
25
T = 25°C 4.75 5.0 5.25 kΩ
B
25/50
3375 K
Module
Symbol Conditions Maximum Ratings
T
VJ
operating -40...+125 °C
T
JM
150 °C
T
stg
-40...+125 °C
V
ISOL
I
ISOL
≤ 1 mA; 50/60 Hz 2500 V~
M
d
Mounting torque (M5) 3 - 6 Nm
Symbol Conditions Characteristic Values
min. typ. max.
R
pin-chip
5mΩ
d
S
Creepage distance on surface 6 mm
d
A
Strike distance in air 6 mm
R
thCH
with heatsink compound 0.01 K/W
Weight 300 g
Dimensions in mm (1 mm = 0.0394")
p h a s e - o u t
5 - 8© 2007 IXYS All rights reserved
20070912a
MUBW 50-12 E8
Fig. 4 Power dissipation versus direct output current and ambient temperature, sin 180°
Fig. 5 Max. forward current versus
case temperature
Fig. 6 Transient thermal impedance junction to case
Fig. 1 Forward current versus voltage
drop per diode
Fig. 2 Surge overload current Fig. 3 I
2
t versus time per diode
Input Rectifier Bridge D11 - D16
0.001 0.01 0.1 1
0
100
200
300
400
500
23456789110
10
2
10
3
10
4
0 20406080100120140160180
0
50
100
150
200
250
300
350
400
450
0 20406080100120140
0.001 0.01 0.1 1
0.001
0.01
0.1
1
I
2
t
I
FSM
t
s
t
ms
P
tot
I
d(AV)M
T
amb
t
s
K/W
A
2
s
0 20406080100120140
0
20
40
60
80
100
120
140
160
I
d(AV)
T
C
A
A
CC
Z
thJC
50Hz, 80% V
RRM
T
VJ
= 150°C
R
thA
:
0.05 K/W
0.15 K/W
0.3 K/W
0.5 K/W
1 K/W
2 K/W
5 K/W
0.0 0.5 1.0 1.5 2.0 2.5
0
20
40
60
80
100
120
I
F
A
V
F
V
T
VJ
= 125°C
T
VJ
= 25°C
A
T
VJ
= 45°C
T
VJ
= 150°C
T
VJ
= 45°C
W
p h a s e - o u t
6 - 8© 2007 IXYS All rights reserved
20070912a
MUBW 50-12 E8
Fig. 7 Typ. output characteristics Fig. 8 Typ. output characteristics
Fig. 9 Typ. transfer characteristics Fig. 10 Typ. forward characteristics of
free wheeling diode
Fig. 11 Typ. turn on gate charge Fig. 12 Typ. turn off characteristics of
free wheeling diode
Output Inverter T1 - T6 / D1 - D6
01234
0
20
40
60
80
100
120
0 100 200 300 400 500
0
5
10
15
20
01234
0
20
40
60
80
100
120
V
CE
V
I
C
V
CE
A
I
C
V
nC
Q
G
V
V
GE
9 V
11 V
9 V
11 V
A
4 6 8 101214
0
40
80
120
160
V
V
GE
A
I
C
0123
0
40
80
120
160
V
V
F
I
F
A
T
VJ
= 25°C
V
GE
= 17 V
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125°C
V
CE
= 20 V
T
VJ
= 125°C
T
VJ
= 25°C
15 V
13 V
V
GE
= 17 V
15 V
13 V
0 200 400 600 800 1000
0
20
40
60
80
100
0
60
120
180
240
300
-di/dt
I
RM
t
rr
A/μs
MUBW5012E8
I
RM
t
rr
A
ns
V
CE
= 600 V
I
C
= 50 A
T
VJ
= 125°C
V
R
= 600 V
I
F
= 60 A
p h a s e - o u t
P1-P3P4-P6P7-P8

MUBW50-12E8

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Description:
MODULE IGBT CBI E3
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