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MUBW50-12E8

P1-P3P4-P6P7-P8
7 - 8© 2007 IXYS All rights reserved
20070912a
MUBW 50-12 E8
Fig. 15 Typ. turn on energy and switching Fig.16 Typ. turn off energy and switching
times versus gate resistor times versus gate resistor
Output Inverter T1 - T6 / D1 - D6
Fig. 17 Reverse biased safe operating area Fig. 18 Typ. transient thermal impedance
RBSOA
Fig. 13 Typ. turn on energy and switching Fig. 14 Typ. turn off energy and switching
times versus collector current times versus collector current
0 20406080100120
0
4
8
12
16
20
0
10
20
30
40
50
60
70
80
90
100
20 40 60 80 100
0
2
4
6
8
0
200
400
600
800
0.000010.0001 0.001 0.01 0.1 1 10
0.0001
0.001
0.01
0.1
1
0 20406080100120
0
2
4
6
8
10
12
0
200
400
600
800
1000
1200
0 20406080100120
0.0
2.5
5.0
7.5
10.0
12.5
15.0
0
50
100
150
200
250
300
0 200 400 600 800 1000 1200 1400
0
20
40
60
80
100
120
E
off
t
d(off)
t
f
E
off
t
d(off)
t
f
I
C
A
I
C
A
E
off
E
on
t
t
R
G
Ω
R
G
Ω
V
CE
t
s
mJ
E
on
mJ
E
off
ns
t
ns
t
I
CM
K/W
Z
thJC
V
A
mJ
ns
mJ
ns
t
r
E
on
t
r
t
d(on)
diode
IGBT
MUBW5012E8
V
CE
= 600 V
V
GE
= ±15 V
R
G
= 22 Ω
T
VJ
= 125°C
V
CE
= 600 V
V
GE
= ±15 V
R
G
= 22 Ω
T
VJ
= 125°C
V
CE
= 600 V
V
GE
= ±15 V
I
C
= 50 A
T
VJ
= 125°C
V
CE
= 600 V
V
GE
= ±15 V
I
C
= 50 A
T
VJ
= 125°C
E
on
R
G
= 22 Ω
T
VJ
= 125°C
single pulse
t
d(on)
p h a s e - o u t
8 - 8© 2007 IXYS All rights reserved
20070912a
MUBW 50-12 E8
Fig. 19 Typ. output characteristics Fig. 20 Typ. forward characteristics of
free wheeling diode
Fig. 21 Typ. turn off energy and switching Fig. 22 Typ. turn off energy and switching
times versus collector current times versus gate resistor
Fig. 23 Typ. transient thermal impedance Fig. 24 Typ. thermistorresistance versus
temperature
Brake Chopper T7 / D7
Temperature Sensor NTC
012345
0
20
40
60
80
V
V
CE
A
I
C
012345
0
20
40
60
80
100
120
V
V
F
I
F
A
020406080
0
2
4
6
0
200
400
600
800
1000
1200
E
off
t
d(off)
t
f
I
C
A
E
off
t
ns
10 20 30 40 50 60 70 80
0
1
2
3
4
0
200
400
600
800
E
off
t
d(off)
t
f
Ω
E
off
ns
0.00001 0.0001 0.001 0.01 0.1 1 10
0.0001
0.001
0.01
0.1
1
10
t
s
K/W
Z
thJC
0 25 50 75 100 125 150
100
1000
10000
T
C
Ω
R
R
G
V
GE
= 15 V
T
VJ
= 125°C
T
VJ
= 25°C
IGBT
diode
single pulse
T
VJ
= 25°C
T
VJ
= 125°C
MUBW5012E8
mJ
V
CE
= 600 V
V
GE
= ±15 V
I
C
= 35 A
T
VJ
= 125°C
mJ
V
CE
= 600 V
V
GE
= ±15 V
R
G
= 39 Ω
T
VJ
= 125°C
p h a s e - o u t
P1-P3P4-P6P7-P8

MUBW50-12E8

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Description:
MODULE IGBT CBI E3
Lifecycle:
New from this manufacturer.
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