NXP Semiconductors
PBHV9115TLH
150 V, 1 A PNP high-voltage low VCEsat BISS transistor
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NXP Semiconductors N.V. 2017. All rights reserved
Product data sheet 16 January 2017 7 / 14
aaa-026070
-1
-10
-1
-10
V
CEsat
(V)
-10
-2
I
C
(mA)
-10
-1
-10
4
-10
3
-1 -10
2
-10
(1)
(3)
(2)
IC/IB = 5
(1) T
amb
=100 °C
(2) T
amb
= 25 °C
(3) T
amb
= -55 °C
Fig. 7. Collector-emitter saturation voltage as a
function of collector current; typical values
aaa-026071
-1
-10
-1
-10
V
CEsat
(V)
-10
-2
I
C
(mA)
-10
-1
-10
4
-10
3
-1 -10
2
-10
(2)
(1)
T
amb
= 25 °C
(1) I
C
/I
B
= 20
(2) I
C
/I
B
= 10
Fig. 8. Collector-emitter saturation voltage as a
function of collector current; typical values
aaa-026072
I
C
(mA)
-10
-1
-10
4
-10
3
-1 -10
2
-10
1
10
10
2
10
3
R
CEsat
(Ω)
10
-1
(1)
(3)
(2)
I
C
/I
B
= 5
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 9. Collector-emitter saturation resistance as a
function of collector current; typical values
I
C
(mA)
-10
-1
-10
4
-10
3
-1 -10
2
-10
aaa-026073
10
1
10
3
10
2
10
4
R
CEsat
(Ω)
10
-1
(2)(1)
T
amb
= 25 °C
(1) I
C
/I
B
= 20
(2) I
C
/I
B
= 10
Fig. 10. Collector-emitter saturation resistance as a
function of collector current; typical values
