OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

MRF6S18140HR3

P1-P3P4-P6P7-P9P10-P12
AR
C
HIVE INF
O
RMATI
O
N
ARCHIVE INFORMATION
MRF6S18140HR3 MRF6S18140HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for N-CDMA base station applications with frequencies from 1805
to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica‐
tions. To be used in Class AB for PCN- PCS/cellular radio and WLL applica‐
tions.
• Typical 2-Carrier N-CDMA Performance: V
DD
= 28 Volts, I
DQ
= 1200 mA,
P
out
= 29 Watts Avg., f = 1877.5 MHz, IS-95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 16 dB
Drain Efficiency — 27.5%
IM3 @ 2.5 MHz Offset — -36 dBc in 1.2288 MHz Bandwidth
ACPR @ 885 kHz Offset — -50.5 dBc in 30 kHz Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1840 MHz, 140 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V
DD
Operation
• Integrated ESD Protection
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain-Source Voltage V
DSS
-0.5, +68 Vdc
Gate-Source Voltage V
GS
-0.5, +12 Vdc
Storage Temperature Range T
stg
-65 to +150 °C
Case Operating Temperature T
C
150 °C
Operating Junction Temperature
(1,2)
T
J
225 °C
Table 2. Thermal Characteristics
Characteristic Symbol Value
(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 140 W CW
Case Temperature 73°C, 29 W CW
R
θ
JC
0.31
0.35
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MRF6S18140H
Rev. 1.1, 12/2009
Freescale Semiconductor
Technical Data
MRF6S18140HR3
MRF6S18140HSR3
1805-1880 MHz, 29 W AVG., 28 V
2 x N-CDMA
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 465C-02, STYLE 1
NI-880S
MRF6S18140HSR3
CASE 465B-03, STYLE 1
NI-880
MRF6S18140HR3
Freescale Semiconductor, Inc., 2006, 2008-2009. All rights reserved.
AR
C
HIVE INF
O
RMATI
O
N
ARCHIVE INFORMATION
2
RF Device Data
Freescale Semiconductor
MRF6S18140HR3 MRF6S18140HSR3
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22-A114) 2 (Minimum)
Machine Model (per EIA/JESD22-A115) A (Minimum)
Charge Device Model (per JESD22-C101) IV (Minimum)
Table 4. Electrical Characteristics (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
I
DSS
— — 10 µAdc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
I
DSS
— — 1 µAdc
Gate-Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
— — 1 µAdc
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 300 µAdc)
V
GS(th)
1.2 2 2.7 Vdc
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
D
= 1200 mAdc, Measured in Functional Test)
V
GS(Q)
2 2.7 3.8 Vdc
Drain-Source On-Voltage
(V
GS
= 10 Vdc, I
D
= 3 Adc)
V
DS(on)
0.1 0.22 0.3 Vdc
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
— 2.2 — pF
Output Capacitance
(V
DS
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
oss
— 685 — pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1200 mA, P
out
= 29 W Avg., f1 = 1877.5 MHz, f2 =
1880 MHz, 2-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in 30 kHz Channel Bandwidth @ ±885 kHz
Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain G
ps
15 16 18 dB
Drain Efficiency η
D
25.5 27.5 — %
Intermodulation Distortion IM3 — -36 -34.5 dBc
Adjacent Channel Power Ratio ACPR — -50.5 -48 dBc
Input Return Loss IRL — -10.5 — dB
1. Part internally matched both on input and output.
AR
C
HIVE INF
O
RMATI
O
N
ARCHIVE INFORMATION
MRF6S18140HR3 MRF6S18140HSR3
3
RF Device Data
Freescale Semiconductor
Figure 1. MRF6S18140HR3(HSR3) Test Circuit Schematic
Z13 0.108″ x 1.070″ Microstrip
Z14 0.960″ x 0.046″ Microstrip
Z15 0.084″ x 0.046″ Microstrip
Z16 0.996″ x 0.080″ Microstrip
Z17 1.015″ x 0.080″ Microstrip
Z18 0.099″ x 1.070″ Microstrip
Z19 0.516″ x 1.070″ Microstrip
Z20 0.292″ x 0.288″ Microstrip
Z21 0.198″ x 0.114″ Microstrip
Z22 0.372″ x 0.080″ Microstrip
Z23 1.181″ x 0.080″ Microstrip
PCB DS Electronics GX0300, 0.030″, ε
r
= 2.55
Z1 0.166″ x 0.082″ Microstrip
Z2 0.250″ x 0.334″ Microstrip
Z3 0.140″ x 0.340″ Microstrip
Z4 0.092″ x 0.164″ Microstrip
Z5 0.130″ x 0.234″ Microstrip
Z6 0.109″ x 0.082″ Microstrip
Z7 0.070″ x 0.082″ Microstrip
Z8 0.350″ x 0.644″ Microstrip
Z9 0.092″ x 0.420″ Microstrip
Z10 0.720″ x 0.082″ Microstrip
Z11 0.090″ x 0.485″ x 0.580″ Taper
Z12 0.342″ x 1.070″ Microstrip
V
BIAS
V
SUPPLY
RF
OUTPUT
RF
INPUT
DUT
C4
R3
Z4 Z5 Z6 Z7
C1
Z8
R5
Z16
Z13
Z19
Z9
Z20
C2
C10 C12 C13 C16
+
C6
Z21 Z22 Z23
B1
R1
C11 C14 C15
Z18
Z17
Z12
Z14
Z15
Z11Z10Z1 Z2 Z3
C8
+
C5
R4
R6
C3
B2
R2
C9
+
C7
Table 5. MRF6S18140HR3(HSR3) Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
B1, B2 47 Ω, 100 MHz Small Ferrite Beads, Surface Mount 2743019447 Fair-Rite
C1, C2 39 pF Chip Capacitors ATC700B390FT500XT ATC
C3 0.1 pF Chip Capacitor ATC100B0R1BT500XT ATC
C4, C5, C12, C13,
C14, C15
10 µF, 50 V Chip Capacitors GRM55DR61H106KA88B Murata
C6, C7, C10, C11 9.1 pF Chip Capacitors ATC100B9R1BT500XT ATC
C8, C9 47 µF, 50 V Electrolytic Capacitors EMVY500ADA470MF80G Nippon Chemi-Con
C16 470 µF, 63 V Electrolytic Capacitor EMVY630GTR471MMH0S Nippon Chemi-Con
R1, R2 12 Ω, 1/4 W Resistors CRCW120612R0FKEA Vishay
R3, R4 1.0 KΩ, 1/4 W Resistors CRCW12061001FKEA Vishay
R5, R6 560 KΩ, 1/4 W Chip Resistors CRCW12065602FKEA Vishay
P1-P3P4-P6P7-P9P10-P12

MRF6S18140HR3

Mfr. #:
Buy MRF6S18140HR3
Manufacturer:
NXP Semiconductors
Description:
FET RF 68V 1.88GHZ NI880
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet