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MRF6S18140HR3

P1-P3P4-P6P7-P9P10-P12
AR
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HIVE INF
O
RMATI
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ARCHIVE INFORMATION
MRF6S18140HR3 MRF6S18140HSR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
100
12
1
0
66
P
out
, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
V
DD
= 28 Vdc
I
DQ
= 1200 mA
f = 1840 MHz
T
C
= -30_C
25_C
10
18
17
16
15
14
55
44
33
22
11
η
D
, DRAIN EFFICIENCY (%)
G
ps
η
D
G
ps
, POWER GAIN (dB)
13
400
85_C
-30 _C
25_C
85_C
Figure 12. Power Gain versus Output Power
P
out
, OUTPUT POWER (WATTS) CW
G
ps
, POWER GAIN (dB)
13
17
0 260
15
14
100 200
16
V
DD
= 24 V
28 V
32 V
I
DQ
= 1200 mA
f = 1840 MHz
Figure 13. MTTF Factor versus Junction Temperature
250
10
8
90
T
J
, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at V
DD
= 28 Vdc, P
out
= 29 W Avg., and η
D
= 27.5%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
10
7
10
6
10
5
110 130 150 170 190
MTTF (HOURS)
210 230
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ARCHIVE INFORMATION
8
RF Device Data
Freescale Semiconductor
MRF6S18140HR3 MRF6S18140HSR3
N-CDMA TEST SIGNAL
10
0.0001
100
0
PEAK-T O-AVERAGE (dB)
Figure 14. 2-Carrier CCDF N-CDMA
10
1
0.1
0.01
0.001
2468
IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
±885 kHz Offset. IM3 Measured in 1.2288 MHz
Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
PROBABILITY (%)
f, FREQUENCY (MHz)
-100
0
Figure 15. 2-Carrier N-CDMA Spectrum
-1 0
-2 0
-3 0
-4 0
-5 0
-6 0
-7 0
-8 0
-9 0
-ACPR in 30 kHz
Integrated BW
+ACPR in 30 kHz
Integrated BW
-IM3 in
1.2288 MHz
Integrated BW
+IM3 in
1.2288 MHz
Integrated BW
1.2288 MHz
Channel BW
6
1.5 4.5
3
0-1.5
-3
-4.5
-6
-7.5
7.5
(dB)
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ARCHIVE INFORMATION
MRF6S18140HR3 MRF6S18140HSR3
9
RF Device Data
Freescale Semiconductor
Z
o
= 10 Ω
Z
load
f = 1920 MHz
Z
source
f = 1760 MHz
f = 1760 MHz
f = 1920 MHz
V
DD
= 28 Vdc, I
DQ
= 1200 mA, P
out
= 29 W Avg.
f
MHz
Z
source
W
Z
load
W
1760 1.454 - j6.703 1.344 - j2.479
1780 1.465 - j6.511 1.338 - j2.299
1800 1.467 - j6.336 1.333 - j2.129
1820 1.448 - j6.193 1.325 - j1.966
1840 1.440 - j6.049 1.308 - j1.801
1860 1.414 - j5.938 1.301 - j1.687
1880 1.377 - j5.827 1.303 - j1.550
1900 1.311 - j5.710 1.301 - j1.419
1920 1.231 - j5.583 1.289 - j1.303
Z
source
= Test circuit impedance as measured from
gate to ground.
Z
load
= Test circuit impedance as measured
from drain to ground.
Figure 16. Series Equivalent Source and Load Impedance
Z
source
Z
load
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
P1-P3P4-P6P7-P9P10-P12

MRF6S18140HR3

Mfr. #:
Buy MRF6S18140HR3
Manufacturer:
NXP Semiconductors
Description:
FET RF 68V 1.88GHZ NI880
Lifecycle:
New from this manufacturer.
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