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VUB160-16NOX

P1-P3P4-P6P7-P8
VUB160-16NOX
Ratings
XXXXXXXXXXXXX yywwx
Logo UL Part name Date code Prod. lin
e
Package
T
VJ
°C
M
D
Nm2.5
mounting torque
2
T
stg
°C125
storage temperature
-40
Weight g76
Symbol Definition typ. max.min.Conditions
virtual junction temperature
Unit
V V
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
6.0
12.0
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current
100 A
per terminal
150-40
terminal to terminal
V
2-Pack
Similar Part Package Voltage class
VUB160-16NOXT V2-Pack 1600
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
50/60 Hz, RMS; I ≤ 1 mA
ISOL
VUB160-16NOX 510141Box 6VUB160-16NOXStandard
3000
3600
ISOL
threshold voltage
V0.81
mΩ
V
0 max
R
0 max
slope resistance *
3.2
1.1
13.8
1.31
8
Equivalent Circuits for Simulation
T =
VJ
I
V
0
R
0
Rectifier Brake
IGBT
Brake
Diode
150 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions.
20130604bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
VUB160-16NOX
Marking
S1
U1/
W1
M1/O1
~A6
~E6
~K6
M10/O10
W
10
U
10
S/T
10
Outlines V2-Pack
IXYS reserves the right to change limits, conditions and dimensions.
20130604bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
VUB160-16NOX
0.001 0.01 0.1 1
400
500
600
700
800
900
23456789
1
10
3
10
4
020406080
0
20
40
60
80
100
0 25 50 75 100 125 150 175
1 10 100 1000 10000
0.0
0.2
0.4
0.6
[A
2
s]
I
FSM
[A]
t[s]
P
tot
[W]
I
F(AV)M
[A]
T
amb
[°C]
t[ms]
0 25 50 75 100 125 150
0
40
80
120
160
I
FAVM
[A]
Z
thJC
[K/W]
50Hz, 80% V
RRM
T
VJ
=150°C
0.5 1.0 1.5
0
40
80
120
160
200
I
F
[A]
V
F
[V]
T
VJ
=45°C
T
VJ
= 150°C
T
VJ
= 45°C
T
VJ
=125°C
T
VJ
= 25°C
Fig. 1 Forward current vs.
voltage drop per diode
Fig. 2 Surge overload current
vs. time per diode
t[ms]
Fig. 3 I
2
tvs.timeperdiode
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
T
C
[°C]
Fig. 5 Max. forward current vs.
case temperature per diode
Fig. 6 Transient thermal impedance junction to case vs. time per diode
R
i
t
i
0.060 0.020
0.003 0.010
0.150 0.225
0.243 0.800
0.144 0.580
R
thA
:
0.2 K/W
0.4 K/W
0.6 K/W
0.8 K/W
1.0 K/W
2.0 K/W
DC =
1
0.5
0.4
0.33
0.17
0.08
0.8 x V
RRM
50 Hz
DC =
1
0.5
0.4
0.33
0.17
0.08
T
VJ
= 150°C
Rectifier
IXYS reserves the right to change limits, conditions and dimensions.
20130604bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
P1-P3P4-P6P7-P8

VUB160-16NOX

Mfr. #:
Buy VUB160-16NOX
Manufacturer:
Littelfuse
Description:
IGBT Modules Standard Rectifier Bridge+Brake Unit
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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