VUB160-16NOX
50 150 2500 100 200 300
0
5
10
15
20
25
30
35
0.001 0.01 0.1 1 10
0.01
0.1
1
0 100 200 300 400 500 600
0
5
10
15
20
0 2 4 6 8 10121416
10
12
14
16
18
20
22
5 7 9 11 13681012
0
50
100
150
200
250
300
01234
0
50
100
150
200
250
300
0123
0
50
100
150
200
250
300
[nC]
[s]
[mJ]
[A]
[A]
[A]
[V]
[V]
[mJ]
[K/W]
E
off
E
on
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics Fig. 3 Typ. transfer characteristics
Fig. 4 Dynamic parameters Q
r
,I
RM
versus T
VJ
Fig. 5 Typ. recovery time t
rr
vs. -di
F
/dt Fig. 6 Typ. peak forward voltage
V
FR
and t
fr
versus di
F
/dt
Fig. 7 Transient thermal impedance junction to case
[V]
[A]
[Ohm]
T
VJ
=125°C
25°C
0 25 50 75 100 125 150
100
1000
10000
[Ohm]
[°C]
Fig. 8 Typ. thermistor resistance
versus temperature
9V
11 V
T
VJ
= 125°C
13 V
V
GE
=15V
17 V
19 V
T
VJ
=25°C
T
VJ
= 125°C
I
C
=150A
V
CE
=600V
E
on
E
off
I
C
= 150 A
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
R
i
t
i
[K/W] [s]
10.0270.002
20.0280.03
3 0.06 0.03
40.0650.08
R
G
= 4.7 Ohm
V
CE
= 600 V
V
GE
=±15 V
T
VJ
=125°C
[V]
Brake IGBT
IXYS reserves the right to change limits, conditions and dimensions.
20130604bData according to IEC 60747and per semiconductor unless otherwise specified
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