BH2JNB1WHFV-TR

Technical Note
BH□□NB1WHFV series
4/8
www.rohm.com
2011.01 - Rev.B
© 2011 ROHM Co., Ltd. All rights reserved.
2.40
2.45
2.50
2.55
2.60
-5 0 -25 0 2 5 50 75 10 0
Temp[
]
Output Voltage VOUT[V]
2.90
2.95
3.00
3.05
3.10
-50-250 255075100
Temp[
]
Output Voltage VOUT[V]
3.20
3.25
3.30
3.35
3.40
-50 -25 0 25 50 75 100
Temp[
]
Output Voltage VOUT[V]
10
20
30
40
50
60
70
80
90
Frequency f[Hz]
Ripple Rejection R.R.[dB]
100 1 k 10 k 100 1 M
Fig.19 Load Response
(Co = 2.2 µF)
(BH25NB1WHFV)
IOUT = 1 mA 30 mA
VOUT
50 mV / div
100 µs / div
Fig.20 Load Response
(Co = 2.2 µF)
(BH30NB1WHFV)
IOUT = 1 mA 30 mA
VOUT
50 mV / div
100 µs / div
Fig.21 Load Response
(Co = 2.2 µF)
(BH33NB1WHFV)
IOUT = 1 mA 30 mA
VOUT 50 mV / div
100 µs / div
Fig.22 Output Voltage Rise Time
(BH25NB1WHFV)
STBY
VOUT
1 V / div
100 µs / div
1 V / div
Co = 1 µF
Co = 2.2 µF
Co = 10 µF
STBY
VOUT
1 V / div
100 µs / div
1 V / div
Co = 1 µF
Co = 2.2 µF
Co = 10 µF
Fig.23 Output Voltage Rise Time
(BH30NB1WHFV)
Fig.24 Output Voltage Rise Time
(BH33NB1WHFV)
STBY
VOUT
1 V / div
100 µs / div
1 V / div
Co = 1 µF
Co = 2.2 µF
Co = 10 µF
Fig.13 Output Voltage vs Temperature
(BH25NB1WHFV)
Fig.14 Output Voltage vs Temperature
(BH30NB1WHFV)
Fig.15 Output Voltage vs Temperature
(BH33NB1WHFV)
Fig.16 Ripple Rejection
(BH25NB1WHFV)
Fig.17 Ripple Rejection
(BH30NB1WHFV)
Fig.18 Ripple Rejection
(BH33NB1WHFV)
IOUT=1mA IOUT=1mA
Co=2.2μF
Io=10mA
IOUT=1mA
10
20
30
40
50
60
70
80
90
Frequency f[Hz]
Ripple Rejection R.R.[dB]
100 1 k 10 k 100 1 M
Co=2.2μF
Io=10mA
10
20
30
40
50
60
70
80
90
Frequency f[Hz]
Ripple Rejection R.R.[dB]
100 1 k 10 k 100 1 M
Co=2.2μF
Io=10mA
Technical Note
BH□□NB1WHFV series
5/8
www.rohm.com
2011.01 - Rev.B
© 2011 ROHM Co., Ltd. All rights reserved.
Block diagram, recommended circuit diagram, and pin assignment diagram
Pin
No.
Symbol Function
1 STBY
Output voltage on/off control
(High: ON, Low: OFF)
2 GND Ground
3 VIN Power supply input
4 VOUT Voltage output
5 N.C. NO CONNECT
Power dissipation (Pd)
1. Power dissipation (Pd)
Power dissipation calculations include estimates of power dissipation characteristics and internal IC power consumption,
and should be treated as guidelines. In the event that the IC is used in an environment where this power dissipation is
exceeded, the attendant rise in the junction temperature will trigger the thermal shutdown circuit, reducing the current
capacity and otherwise degrading the IC's design performance. Allow for sufficient margins so that this power dissipation is
not exceeded during IC operation.
Calculating the maximum internal IC power consumption (P
MAX)
PMAX = (VIN VOUT) IOUT (MAX.) VIN : Input voltage
VOUT : Output voltage
I
OUT (MAX): Max. output current
2. Power dissipation/power dissipation reduction (Pd)
HVSOF5
*Circuit design should allow a sufficient margin for the temperature range so that PMAX < Pd.
Input Output capacitors
It is recommended to insert bypass capacitors between input and GND pins, positioning them as close to the pins as
possible. These capacitors will be used when the power supply impedance increases or when long wiring paths are used, so
they should be checked once the IC has been mounted.
Ceramic capacitors generally have temperature and DC bias characteristics. When selecting ceramic capacitors, use X5R or
X7R, or better models that offer good temperature and DC bias characteristics and high tolerant voltages.
Typical ceramic capacitor characteristics
0
20
40
60
80
100
120
01234
DC bias Vdc[V]
Capacitance rate of change [%]
70
75
80
85
90
95
10 0
01234
DC bias Vdc[V]
Capacitance rate of change [%]
0
20
40
60
80
10 0
12 0
-25 0 25 50 75
Temp[
]
Capacitance rate of change [%]
50 V
tolerance
16 V tolerance
10 V
tolerance
50 V tolerance
16 V tolerance
10 V
tolerance
Y5V
X7R
X5R
Fig.27 Capacitance vs Bias
(Y5V)
Fig.28 Capacitance vs Bias
(X5R, X7R)
Fig.29 Capacitance vs Temperature
(
X5R, X7R, Y5V
)
0
0.2
0.4
0.6
0 25 50 75 100 125
Ta[]
Pd[W]
Board: 70 mm
70 mm 1.6 mm
Material: Glass epoxy PCB
410 mW
Fig. 26 HVSOF5 Power Dissipation/Power Dissipation Reduction (Example)
Fig.25
Cin 0.1µF
Co 2.2µF
BH□□NB1WHFV
THERMAL
PROTECTION
OVER CURRENT
PROTECTION
VOLTAGE
REFERENCE
CONTROL
BLOCK
VOUT
N.C.
VIN
VIN
Cin
GND
STBY
VSTB
VOUT
Co
3
2
1
5
4
Technical Note
BH□□NB1WHFV series
6/8
www.rohm.com
2011.01 - Rev.B
© 2011 ROHM Co., Ltd. All rights reserved.
Output capacitors
Mounting input capacitor between input pin and GND(as close to pin as possible), and also output capacitor between output
pin and GND(as close to pin as possible) is recommended. The input capacitor reduces the output impedance of the voltage
supply source connected to the VCC. The higher value the output capacitor goes, the more stable the whole operation
becomes. This leads to high load transient response. Please confirm the whole operation on actual application board.
Generally, ceramic capacitor has wide range of tolerance, temperature coefficient, and DC bias characteristic. And also its
value goes lower as time progresses. Please choose ceramic capacitors after obtaining more detailed data by asking
capacitor makers.
BH□□NB1WHFV
Operation Notes
1. Absolute maximum ratings
An excess in the absolute maximum ratings, such as supply voltage, temperature range of operating conditions, etc.,
can break down the devices, thus making impossible to identify breaking mode, such as a short circuit or an open circuit.
If any over rated values will expect to exceed the absolute maximum ratings, consider adding circuit protection devices,
such as fuses.
2. Thermal design
Use a thermal design that allows for a sufficient margin in light of the power dissipation (Pd) in actual operating
conditions.
3. Inter-pin shorts and mounting errors
Use caution when positioning the IC for mounting on printed circuit boards. The IC may be damaged if there is any
connection error or if pins are shorted together.
4. Thermal shutdown circuit (TSD)
The IC incorporates a built-in thermal shutdown circuit (TSD circuit). The thermal shutdown circuit is designed only to
shut the IC off to prevent runaway thermal operation. It is not designed to protect the IC or guarantee its operation. Do
not continue to use the IC after operating this circuit or use the IC in an environment where the operation of this circuit is
assumed.
5. Overcurrent protection circuit
The IC incorporates a built-in overcurrent protection circuit that operates according to the output current capacity. This
circuit serves to protect the IC from damage when the load is shorted. The protection circuit is designed to limit current
flow by not latching in the event of a large and instantaneous current flow originating from a large capacitor or other
component. These protection circuits are effective in preventing damage due to sudden and unexpected accidents.
However, the IC should not be used in applications characterized by the continuous operation or transitioning of the
protection circuits. At the time of thermal designing, keep in mind that the current capability has negative characteristics
to temperatures.
6. Action in strong electromagnetic field
Use caution when using the IC in the presence of a strong electromagnetic field as doing so may cause the IC to
malfunction.
7. Ground wiring pattern
When using both small signal and large current GND patterns, it is recommended to isolate the two ground patterns,
placing a single ground point at the ground potential of application so that the pattern wiring resistance and voltage
variations caused by large currents do not cause variations in the small signal ground voltage. Be careful not to change
the GND wiring pattern of any external components, either.
0.01
0.1
1
10
100
0 50 100 150
Output Current IOUT [mA]
ESR[
]
Stable region
Fig.30 Stable Operation Region (Example)
COUT = 2.2 µF
Ta = +25°C

BH2JNB1WHFV-TR

Mfr. #:
Manufacturer:
Description:
LDO Voltage Regulators 150MA 2.85V CMOS LDO Regulator
Lifecycle:
New from this manufacturer.
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