BH2JNB1WHFV-TR

Technical Note
BH□□NB1WHFV series
7/8
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2011.01 - Rev.B
© 2011 ROHM Co., Ltd. All rights reserved.
8. GND voltage
The potential of GND pin must be minimum potential in all operating conditions.
9. Back Current
In applications where the IC may be exposed to back current flow, it is recommended to create a path to dissipate this
current by inserting a bypass diode between the VIN and VOUT pins.
10. Testing on application boards
When testing the IC on an application board, connecting a capacitor to a pin with low impedance subjects the IC to
stress. Always discharge capacitors after each process or step. Always turn the IC's power supply off before connecting
it to or removing it from a jig or fixture during the inspection process. Ground the IC during assembly steps as an
antistatic measure. Use similar precaution when transporting or storing the IC.
11. Regarding input pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated. P-N junctions are formed at the intersection of these P layers with the N layers of other elements, creating a
parasitic diode or transistor. For example, the relation between each potential is as follows:
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes can occur inevitable in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Accordingly, methods by which parasitic diodes
operate, such as applying a voltage that is lower than the GND (P substrate) voltage to an input pin, should not be used.
Fig.32 Example of IC structure
Fig. 31 Example Bypass Diode Connection
VIN
STBY GND
OUT
Back current
Resistor
Transistor (NPN)
N
N N
P
+
P
+
P
P substrate
GND
Parasitic element
Pin A
N
N
P
+
P
+
P
P substrate
GND
Parasitic element
Pin B
C
B
E
N
GND
Pin A
Parasitic
element
Pin B
Other adjacent elements
E
B C
GND
Parasitic
element
Technical Note
BH□□NB1WHFV series
8/8
www.rohm.com
2011.01 - Rev.B
© 2011 ROHM Co., Ltd. All rights reserved.
Ordering part number
B H 2 5 N B 1 W H F V - T R
Part No. Output voltage
25:2.5 V
28:2.8 V
2J:2.85 V
29:2.9 V
30:3.0 V
31:3.1 V
33:3.3 V
Series
NB1 : High ripple
rejection
Shutdown
switch
W : Includes
switch
Package
HFV : HVSOF5
Packaging and forming specification
TR: Embossed tape and reel
(Unit : mm)
HVSOF5
S
0.08
M
0.1 S
4
321
5
(0.05)
1.6±0.05
1.0±0.05
1.6±0.05
1.2±0.05
(MAX 1.28 include BURR)
45
32
1
(0.8)
(0.91)
(0.3)
(0.41)
0.2MAX
0.13±0.05
0.22±0.05
0.6MAX
0.5
0.02
+0.03
–0.02
Direction of feed
Reel
Order quantity needs to be multiple of the minimum quantity.
<Tape and Reel information>
Embossed carrier tapeTape
Quantity
Direction
of feed
The direction is the 1pin of product is at the upper right when you hold
reel on the left hand and you pull out the tape on the right hand
3000pcs
TR
()
1pin
R1120
A
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© 2011 ROHM Co., Ltd. All rights reserved.
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Examples of application circuits, circuit constants and any other information contained herein
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BH2JNB1WHFV-TR

Mfr. #:
Manufacturer:
Description:
LDO Voltage Regulators 150MA 2.85V CMOS LDO Regulator
Lifecycle:
New from this manufacturer.
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