83210 Data Sheet
©2016 Integrated Device Technology, Inc Revision A March 10, 20163
TABLE 3A. POWER SUPPLY DC CHARACTERISTICS, V
DD
= 1.5V ± 8%, TA = 0°C TO 85°C
TABLE 3B. LVCMOS / LVTTL DC CHARACTERISTICS, V
DD
= 1.5V ± 8%, TA = 0°C TO 85°C
NOTE: Stresses beyond those listed under Absolute Maximum
Ratings may cause permanent damage to the device. These
ratings are stress specifications only. Functional operation of
product at these conditions or any conditions beyond those listed
in the DC Characteristics or AC Characteristics is not implied.
Exposure to absolute maximum rating conditions for extended
periods may affect product reliability.
Symbol Parameter Test Conditions Minimum Typical Maximum Units
V
DD
Power Supply Voltage 1.38 1.5 1.62 V
I
DD
Power Supply Current Outputs Loaded @ 62.5MHz 215 250 mA
I
DDQ
Quiescent Supply Current V
IN
= 0V, outputs disabled 1 mA
Symbol Parameter Test Conditions Minimum Typical Maximum Units
V
IH
Input High Voltage nOE 0.7*V
DD
V
DD
+ 0.3 V
V
IL
Input Low Voltage nOE -0.3 0.3*V
DD
V
I
IH
Input High Current nOE 150 µA
I
IL
Input Low Current nOE -5 µA
TABLE 3C. HSTL DC CHARACTERISTICS, V
DD
= 1.5V ± 8%, TA = 0°C TO 85°C
Symbol Parameter Test Conditions Minimum Typical Maximum Units
V
IH
Input High Voltage IN
V
REF
= 0.75V
0.85 1.8 V
V
IL
Input Low Voltage IN -0.3 0.65 V
V
OH
Output High Voltage I
OH
= -16mA 1.0 V
DD
+ 0.3 V
V
OL
Output Low Voltage I
OL
= 16mA -0.3 0.4 V
ABSOLUTE MAXIMUM RATINGS
Supply Voltage, V
DD
4.6V
Inputs, V
I
-0.5V to V
DD
+ 0.5 V
Outputs, V
O
-0.5V to V
DD
+ 0.5V
Package Thermal Impedance, θ
JA
75.5°C/W (0 mps)
Storage Temperature, T
STG
-65°C to 150°C
