BC817_BC817W_BC337_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 17 November 2009 4 of 19
NXP Semiconductors
BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
5. Limiting values
[1] Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
[2] Valid for all available selection groups.
6. Thermal characteristics
[1] Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
[2] Valid for all available selection groups.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - 50 V
V
CEO
collector-emitter voltage open base;
I
C
=10mA
-45V
V
EBO
emitter-base voltage open collector - 5 V
I
C
collector current (DC) - 500 mA
I
CM
peak collector current - 1 A
I
BM
peak base current - 200 mA
P
tot
total power dissipation
BC817 T
amb
≤ 25 °C
[1][2]
-250mW
BC817W T
amb
≤ 25 °C
[1][2]
-200mW
BC337 T
amb
≤ 25 °C
[1][2]
-625mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
BC817 T
amb
≤ 25 °C
[1][2]
- - 500 K/W
BC817W T
amb
≤ 25 °C
[1][2]
- - 625 K/W
BC337 T
amb
≤ 25 °C
[1][2]
- - 200 K/W