ZXTN617MATA Datasheet ZXTN617MATA | P1-P3

ZXTN617MA

Document number: DS31888 Rev. 5 - 2

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ZXTN617MA

15V NPN LOW SATURATION TRANSISTOR

Features and Benefits

• BV

CEO

> 15V

• I

C

= 4.5A Continuous Collector Current

• Low Saturation Voltage (100mV max @ 1A)

• R

SAT

= 45 mΩ for a low equivalent On-Resistance

• h

FE

specified up to 12A for high current gain hold up

• Low profile 0.6mm high package for thin applications

• R

θ

JA

efficient, 60% lower than SOT23

• 4mm

2

footprint, 50% smaller than SOT23

• Lead-Free, RoHS Compliant (Note 1)

• Halogen and Antimony Free. "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: DFN2020B-3

• Case Material: Molded Plastic. “Green” Molding Compound.

• Terminals: Pre-Plated NiPdAu leadframe.

• Nominal Package Height: 0.6mm

• UL Flammability Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Weight: 0.01 grams (approximate)

Applications

• MOSFET Gate Driving

• DC–DC Converters

• Charging Circuits

• Motor Control

• Power switch

Ordering Information

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

ZXTN617MATA SA 7 8 3000

Notes: 1. No purposefully added lead.

2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com.

Marking Information

SA = Product Type Marking code

To

p

View

To

p

View

DFN2020B-3

Device Symbol

Bottom View

Pin-Out

Bottom View

C

E

B

SA

ZXTN617MA

Document number: DS31888 Rev. 5 - 2

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ZXTN617MA

Maximum Ratings @T

A

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Collector-Base Voltage

V

CBO

40

V

Collector-Emitter Voltage

V

CEO

15

Emitter-Base Voltage

V

EBO

7

Peak Pulse Current

I

CM

15

A

Continuous Collector Current

(Note 3)

I

C

4.5

(Note 4) 5

Base Current

I

B

1

Thermal Characteristics @T

A

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Power Dissipation

Linear Derating Factor

(Note 3)

P

D

1.5

12

W

mW/°C

(Note 4)

2.45

19.6

Thermal Resistance, Junction to Ambient

(Note 3)

R

θ

JA

83

°C/W

(Note 4) 51

Thermal Resistance, Junction to Lead (Note 5)

R

θ

JL

16.8

Operating and Storage Temperature Range

T

J,

T

STG

-55 to +150

°C

Notes: 3. For a device surface mounted on 31mm x 31mm (10cm

2

) FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is

measured when operating in a steady-state condition. The entire exposed collector pad is attached to the heatsink.

4. Same as note (3), except the device is measured at t ≤ 5 sec.

5. For a single device, thermal resistance from junction to solder-point (at the end of the drain lead).

ZXTN617MA

Document number: DS31888 Rev. 5 - 2

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Thermal Characteristics

0.1 1 10

0.01

0.1

1

10

0 25 50 75 100 125 150

0.0

0.5

1.0

1.5

2.0

100µ 1m 10m 100m 1 10 100 1k

0

20

40

60

80

0.1 1 10 100

0

25

50

75

100

125

150

175

200

225

0.1 1 10 100

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

100us

100ms

1s

V

CE(SAT)

Limited

1ms

Safe Operating Area

Single Pulse, T

amb

=25°C

DC

10ms

I

C

Collector Current (A)

V

CE

Collector-Emitter Voltage (V)

Derating Curve

10 sqcm

Single

1oz Cu

T

amb

=25°C

Max Power Dissipation (W)

Temperature (°C)

10 sqcm

Single

1oz Cu

D=0.2

D=0.5

D=0.1

Transient Thermal Impedance

Single Pulse

D=0.05

Thermal Resistance (°C/W)

Pulse Width (s)

Thermal Resistance v Board Area

1oz copper

2oz copper

Thermal Resistance (°C/W)

Board Cu Area (sqcm)

1oz copper

2oz copper

Power Dissipation v Board Area

T

amb

=25°C

T

j max

=150°C

Continuous

P

D

Dissipation (W)

Board Cu Area (sqcm)

ZXTN617MATA

ZXTN617MATA

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