ZXTN617MATA

P1-P3 P4-P6 P7-P7

ZXTN617MA

Document number: DS31888 Rev. 5 - 2

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Electrical Characteristics @T

A

= 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

Collector-Base Breakdown Voltage

BV

CBO

40 70 - V

I

C

= 100 µA

Collector-Emitter Breakdown Voltage (Note 6)

BV

CEO

15 18 - V

I

C

= 10 mA

Emitter-Base Breakdown Voltage

BV

EBO

7 8.2 - V

I

E

= 100 µA

Collector Cutoff Current

I

CBO

- - 100 nA

V

CB

= 30V

Emitter Cutoff Current

I

EBO

- - 100 nA

V

EB

= 6V

Collector Emitter Cutoff Current

I

CES

- - 100 nA

V

CES

= 12V

Static Forward Current Transfer Ratio (Note 6)

h

FE

200

300

200

150

-

415

450

320

240

80

-

-

-

-

-

-

I

C

= 10mA, V

CE

= 2V

I

C

= 200mA, V

CE

= 2V

I

C

= 3A, V

CE

= 2V

I

C

= 5A, V

CE

= 2V

I

C

= 12A, V

CE

= 2V

Collector-Emitter Saturation Voltage (Note 6)

V

CE(sat)

-

-

-

-

-

8

70

165

240

200

14

100

200

310

-

mV

I

C

=0.1A, I

B

= 10mA

I

C

= 1A, I

B

= 10mA

I

C

= 3A, I

B

= 50mA

I

C

=4.5A, I

B

= 50mA

I

C

=4.5A, I

B

= 100mA

Base-Emitter Turn-On Voltage (Note 6)

V

BE

(

on

)

- 0.88 0.96 V

I

C

= 4.5A, V

CE

= 2V

Base-Emitter Saturation Voltage (Note 6)

V

BE

(

sat

)

- 0.94 1.05 V

I

C

= 4.5A, I

B

= 50mA

Output Capacitance

C

obo

- 30 40 pF

V

CB

= 10V. f = 1MHz

Transition Frequency

f

T

80 120 - MHz

V

CE

= 10V, I

C

= 50mA,

f = 100MHz

Turn-On Time

t

on

- 120 - ns

V

CC

= 10V, I

C

= 1A

I

B1

= I

B2

= 10mA Turn-Off Time

t

off

- 160 - ns

Notes: 6. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%.

ZXTN617MA

Document number: DS31888 Rev. 5 - 2

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Typical Electrical Characteristics

1m 10m 100m 1 10

1m

10m

100m

1

1m 10m 100m 1 10

0.00

0.05

0.10

0.15

0.20

0.25

1m 10m 100m 1 10

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1m 10m 100m 1 10

0.4

0.6

0.8

1.0

1m 10m 100m 1 10

0.2

0.4

0.6

0.8

1.0

0

90

180

270

360

450

540

630

V

CE(SAT)

v I

C

Tamb=25°C

I

C

/I

B

=100

I

C

/I

B

=50

I

C

/I

B

=10

V

CE(SAT)

(V)

I

C

Collector Current (A)

V

BE(SAT)

v I

C

I

C

/I

B

=50

100°C

25°C

-55°C

V

CE(SAT)

(V)

I

C

Collector Current (A)

h

FE

v I

C

V

CE

=2V

-55°C

25°C

100°C

Normalised Gain

I

C

Collector Current (A)

25°C

V

CE(SAT)

v I

C

I

C

/I

B

=50

100°C

-55°C

V

BE(SAT)

(V)

I

C

Collector Current (A)

V

BE(ON)

v I

C

V

CE

=2V

100°C

25°C

-55°C

V

BE(ON)

(V)

I

C

Collector Current (A)

Typical Gain (h

FE

)

ZXTN617MA

Document number: DS31888 Rev. 5 - 2

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Package Outline Dimensions

Suggested Pad Layout

DFN2020B-3

Dim Min Max Typ

A 0.57 0.63 0.60

A1 0 0.05 0.02

A3

⎯ ⎯

0.152

b 0.20 0.30 0.25

D 1.95 2.075 2.00

D2 1.22 1.42 1.32

D4 0.56 0.76 0.66

e

⎯ ⎯

0.65

E 1.95 2.075 2.00

E2 0.79 0.99 0.89

E4 0.48 0.68 0.58

L 0.25 0.35 0.30

Z

⎯ ⎯

0.225

All Dimensions in mm

Dimensions Value (in mm)

C 1.30

G 0.24

X 0.35

X1 1.52

Y 1.09

Y1 0.47

Y2 0.50

SEATING PLANE

E

E2

D

D2

L

A3

A

A1

b

D4

E4

Z

e

e

X

Y1

Y

Y2

X1

C

G

P1-P3 P4-P6 P7-P7

ZXTN617MATA

Mfr. #:

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Manufacturer:

Diodes Incorporated

Description:

Bipolar Transistors - BJT BIPOLAR TRANSISTOR NPN

Lifecycle:

New from this manufacturer.

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ZXTN617MATA