©2014 Silicon Storage Technology, Inc. DS-70005004G 10/14
Data Sheet
www.microchip.com
Features
Input/Output ports internally matched to 50 and
DC decoupled
High gain:
Typically 28 dB gain across 2.4–2.5 GHz
High linear output power:
>24 dBm P1dB
- Single-tone measurement. Please refer to “Absolute
Maximum Stress Ratings” on page 5
Meets 802.11g OFDM ACPR requirement up to 21.5
dBm
3% EVM up to 18 dBm for 54 Mbps 802.11g signal
2.5% EVM up to 17 dBm for 802.11n, MCS7, 40 MHz
– Meets 802.11b ACPR requirement up to 22.5 dBm
– Meets Bluetooth
®
spectrum mask for 3 Mbps at 17 dBm
typical
High power-added efficiency/Low operating cur-
rent for 802.11b/g/n applications
~28%/138 mA @ P
OUT
= 21.5 dBm for 802.11g
– ~33%/155 mA @ P
OUT
= 22.5 dBm for 802.11b
Single-pin low I
REF
power-up/down control
–I
REF
<2 mA
Low idle current
~60 mA I
CQ
High-speed power-up/down
Turn on/off time (10%- 90%) <100 ns
Typical power-up/down delay with driver delay included
<200 ns
Low shut-down current (~2 µA)
Stable performance over temperature
– ~2 dB gain variation between -40°C to +85°C
– ~1 dB power variation between -40°C to +85°C
Excellent on-chip power detection
>15 dB dynamic range, dB-wise linear
VSWR insensitive, temperature stable
Packages available
8-contact X2SON – 2mm x 2mm x 0.4mm
8-contact USON – 2mm x 2mm x 0.6mm
Non-Pb (lead-free), RoHS compliant, and Halogen free
Applications
• WLAN (IEEE 802.11b/g/n)
Bluetooth
®
Cordless phones
2.4 GHz ISM wireless equipment
2.4 GHz High-Efficiency, High-Gain Power Amplifier Module
SST12LP17E
SST12LP17E is a 2.4 GHz high-efficiency, fully-matched power amplifier module
based on the highly-reliable InGaP/GaAs HBT technology. It is designed in compli-
ance with IEEE 802.11b/g/n applications and typically provides 28 dB gain with 28%
power-added efficiency at 21dBm. SST12LP17E has excellent linearity, providing
3% EVM at typically 18 dBm, while meeting 802.11g spectrum mask at 21.5 dBm.
This power amplifier requires no external RF matching, and only requires one exter-
nal DC-bias capacitor to meet the specified performance. It offers high-speed
power-up/-down control through a single reference voltage pin and includes a tem-
perature-stable, VSWR insensitive power detector voltage output. SST12LP17E is
offered in a super-thin (0.4mm maximum) 8-contact X2SON package and a 8-con-
tact USON package.
©2014 Silicon Storage Technology, Inc. DS-70005004G 10/14
2
2.4 GHz High-Efficiency, High-Gain Power Amplifier Module
SST12LP17E
Data Sheet
Product Description
The SST12LP17E is a versatile power amplifier based on the highly-reliable InGaP/GaAs HBT tech-
nology.The input/output RF ports are fully matched to 50 internally. These RF ports are DC decoupled and
require no DC-blocking capacitors or matching components. This helps reduce the system board’s Bill of Materi-
als (BOM) cost.
SST12LP17E is a 2.4 GHz fully-integrated, high-efficiency Power Amplifier module designed in compli-
ance with IEEE 802.11b/g/n applications. It typically provides 28 dB gain with 28% power-added effi-
ciency (PAE) @ POUT = 21.5 dBm for 802.11g and 33% PAE @ POUT = 22.5 dBm for 802.11b.
This power amplifier has excellent linearity, typically 3% added EVM at 18 dBm output power which is essential
for 54 Mbps 802.11g operation while meeting 802.11g spectrum mask at 21.5 dBm and 802.11b spectrum
mask at 22.5 dBm. Using MCS7 modulation, with 40 MHz bandwidth, the SST12LP17E provides 17 dBm at
2.5% EVM.
The device also features easy board-level usage along with high-speed power-up/down control through a single
combined reference voltage pin. Ultra-low reference current (total I
REF
~2 mA) makes the SST12LP17E control-
lable by an on/off switching signal directly from the baseband chip. These features, coupled with low operating
current, make the SST12LP17E ideal for the final stage power amplification in battery-powered 802.11b/g/n
WLAN transmitter and Bluetooth applications.
The SST12LP17E has an excellent on-chip, single-ended power detector, which features wide dynamic-range,
>15 dB, with dB-wise linear performance. The excellent on-chip power detector provides a reliable solution
to board-level power control.
The SST12LP17E is offered in both 8-contact X2SON and 8-contact USON packages. See Figure 2 for pin
assignments and Table 1 for pin descriptions.
©2014 Silicon Storage Technology, Inc. DS-70005004G 10/14
3
2.4 GHz High-Efficiency, High-Gain Power Amplifier Module
SST12LP17E
Data Sheet
Functional Blocks
Figure 1: Functional Block Diagram
Bias Circuit
1426 F1.1
4
3
2
1
5
6
7
8
VCC2
RFIN
VREF
VCC1
DNU
RFOUT
DNU
DET

SST12LP17E-XX8E

Mfr. #:
Manufacturer:
Microchip Technology
Description:
RF Amplifier WLAN 11b/g/n Fully-integrated PA
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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